High Temperature Reliability of Ta-Based and TiW-Based Diffusion Barriers

2015 ◽  
pp. 169-174 ◽  
Author(s):  
Nando Budhiman ◽  
Ulrich Schürmann ◽  
Björn Jensen ◽  
Steffen Chemnitz ◽  
Lorenz Kienle ◽  
...  
Keyword(s):  
High Temperature ◽  
Diffusion Barriers

The reaction of amorphous Ni-Nb films with Si in the presence of a native SiO2 layer

1990 ◽  
Vol 48 (4) ◽  
pp. 664-665
Author(s):  
N. Rozhanski ◽  
A. Barg
Keyword(s):  
High Temperature ◽  
Crystallization Temperature ◽  
Diffusion Barriers ◽  
Sio2 Layer ◽  
Si Substrate ◽  
Cross Sectional ◽  
Plan View ◽  
Temperature Range ◽  
Sputter Deposited

Amorphous Ni-Nb alloys are of potential interest as diffusion barriers for high temperature metallization for VLSI. In the present work amorphous Ni-Nb films were sputter deposited on Si(100) and their interaction with a substrate was studied in the temperature range (200-700)°C. The crystallization of films was observed on the plan-view specimens heated in-situ in Philips-400ST microscope. Cross-sectional objects were prepared to study the structure of interfaces.The crystallization temperature of Ni5 0 Ni5 0 and Ni8 0 Nb2 0 films was found to be equal to 675°C and 525°C correspondingly. The crystallization of Ni5 0 Ni5 0 films is followed by the formation of Ni6Nb7 and Ni3Nb nucleus. Ni8 0Nb2 0 films crystallise with the formation of Ni and Ni3Nb crystals. No interaction of both films with Si substrate was observed on plan-view specimens up to 700°C, that is due to the barrier action of the native SiO2 layer.

Evaluation of high-Temperature diffusion barriers for the Pt-Mo system

1988 ◽  
Vol 19 (9) ◽  
pp. 2163-2170 ◽  
Author(s):  
Richard P. Walters ◽  
Bernard S. Covino
Keyword(s):  
High Temperature ◽  
Diffusion Barriers ◽  
Temperature Diffusion

Ta–Ru–N diffusion barriers for high-temperature contacts to p-type SiC

2005 ◽  
Vol 485 (1-2) ◽  
pp. 207-211 ◽  
Author(s):  
C.M. Eichfeld ◽  
M.A. Horsey ◽  
S.E. Mohney ◽  
A.V. Adedeji ◽  
J.R. Williams
Keyword(s):  
High Temperature ◽  
Diffusion Barriers ◽  
P Type

Investigation of Potential Diffusion Barriers Between YBa2Cu3O7-x and Silicon

1989 ◽  
Vol 169 ◽  
Author(s):  
A. Lubig ◽  
Ch. Buchal ◽  
W. Zander ◽  
B. Stritzker
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Noble Metals ◽  
High Temperature Superconductors ◽  
Superconducting Films ◽  
Diffusion Barriers ◽  
Surface Roughening ◽  
Strong Reaction ◽  
Zero Resistance ◽  
Potential Diffusion

AbstractThin films of ZrO2, BaF2, and noble metals on TiN have been examined by RBS as potential diffusion barriers between Si(100) substrates and high-temperature superconductors. As best result so far, a buffer layer of 260 nm ZrO2 enabled the growth of a 230 nm film of YBa2Cu3O7-x, which had been deposited by laser ablation. The relatively low zero resistance temperature of about 60 K may result from some interdiffusion between YBaCuO components and the ZrO2 layer or from holes in the film. A 520 nm BaF2 layer was able to prevent Si outdiffusion towards the surface, when exposed to an oxidizing ambient at typical YBa2Cu3O7-x deposition temperatures between 750 and 800°C. A strong reaction between YBaCuO components and BaF2, however, resulted in non-superconducting films. At high temperatures in oxidizing ambient the noble metal/TiN/Si samples suffered severely from oxidation and surface roughening.

High-temperature diffusion barriers from Si-rich silicon-nitride

2006 ◽  
Vol 38 (12-13) ◽  
pp. 1687-1691 ◽  
Author(s):  
G. Bilger ◽  
T. Voss ◽  
T. Schlenker ◽  
A. Strohm
Keyword(s):  
High Temperature ◽  
Silicon Nitride ◽  
Diffusion Barriers ◽  
Temperature Diffusion

A comparison between aluminum and copper interactions with high‐temperature oxide and nitride diffusion barriers

1989 ◽  
Vol 7 (3) ◽  
pp. 784-789 ◽  
Author(s):  
A. Charai ◽  
S. E. Hörnström ◽  
O. Thomas ◽  
P. M. Fryer ◽  
J. M. E. Harper
Keyword(s):  
High Temperature ◽  
Diffusion Barriers ◽  
High Temperature Oxide ◽  
Temperature Oxide
Sign in / Sign up

Export Citation Format

Share Document