The Extent of Dopant Activation after Microwave and Rapid Thermal Anneals Using Similar Heating Profiles

2015 ◽  
pp. 141-148
Author(s):  
T. Gunawansa ◽  
Zhao Zhao ◽  
N. David Theodore ◽  
A. R. Lanz ◽  
T. L. Alford
Keyword(s):  
Dopant Activation ◽  
Heating Profiles

The Extent of Dopant Activation After Microwave and Rapid Thermal Anneals Using Similar Heating Profiles

2015 ◽  
pp. 141-148
Author(s):  
T. Gunawansa ◽  
Zhao Zhao ◽  
N. David Theodore ◽  
A. R. Lanz ◽  
T. L. Alford
Keyword(s):  
Dopant Activation ◽  
Heating Profiles

Laser Crystallization and Dopant Activation of a-Si:H Carrier-Selective Layer in TOPCon Si Solar Cells

2020 ◽  
Vol 10 (5) ◽  
pp. 1283-1289
Author(s):  
George C. Wilkes ◽  
Ajay D. Upadhyaya ◽  
Ajeet Rohatgi ◽  
Mool C. Gupta
Keyword(s):  
Solar Cells ◽  
Laser Crystallization ◽  
Selective Layer ◽  
Dopant Activation ◽  
Si Solar Cells

High & Low Dose USJ Implantation into Ge-Epi on Si Wafers: Dopant Activation, Damage Recovery and Mobility Effects

2016 ◽  
Author(s):  
John Borland ◽  
Michiro Sugitani ◽  
Joshua Herman ◽  
Karium Huet ◽  
Walt Johnson ◽  
...  
Keyword(s):  
Low Dose ◽  
Dopant Activation

45nm Node p+ USJ Formation With High Dopant Activation And Low Damage

2006 ◽  
Author(s):  
J. Borland ◽  
S. Shishiguchi ◽  
A. Mineji ◽  
W. Krull ◽  
D. Jacobson ◽  
...  
Keyword(s):  
Dopant Activation

Cloud and radiative heating profiles associated with the boreal summer intraseasonal oscillation

2017 ◽  
Vol 50 (5-6) ◽  
pp. 1485-1494 ◽  
Author(s):  
Jinwon Kim ◽  
Duane E. Waliser ◽  
Gregory V. Cesana ◽  
Xianan Jiang ◽  
Tristan L’Ecuyer ◽  
...  
Keyword(s):  
Intraseasonal Oscillation ◽  
Radiative Heating ◽  
Boreal Summer ◽  
Boreal Summer Intraseasonal Oscillation ◽  
Heating Profiles

Silicon Rapid Thermal Processing with Ripple Pyrometry

1997 ◽  
Vol 502 ◽  
Author(s):  
A. T. Fiory
Keyword(s):  
Integrated Circuit ◽  
Thermal Processing ◽  
Wide Field ◽  
Loop Control ◽  
Dopant Activation ◽  
Integrated Circuit Fabrication ◽  
Metal Silicides ◽  
Circuit Fabrication ◽  
Infrared Lamps

ABSTRACTThermal processing in silicon integrated circuit fabrication steps for dopant activation, metal silicides, annealing, and oxidation commonly uses single-wafer furnaces that rapidly heat wafers with incandescent infrared lamps. Radiation pyrometers and thermocouple probes are the principle methods of measuring wafer temperature for closed-loop control of rapid thermal processes. The challenge with thermocouples is in dealing with heat from the lamps and non-ideal thermally resistive wafer contact. The challenge with pyrometry is in compensating for the variable emissivity of wafer surfaces and suppressing interference from the lamps. Typical deposited or grown layers of silicon nitride, silicon dioxide, and polycrystalline silicon can produce dramatic changes in emissivity. Layer thicknesses and composition are generally not known with sufficient accuracy, so a method for real time in situ emissivity compensation is required. Accufiber introduced a “ripple technique” to address this issue. The idea is to use two probes, separately sensing radiation from the wafer and the lamps, and extracting AC and quasi-DC parts from each. The AC signals provide a measure of the reflectivity of the wafer, and thence emissivity, as well as the fraction of reflected lamp radiation present in the DC signals. Lucent Technologies introduced a method of using AC lamp ripple to measure wafer temperatures with two radiation probes at a wall in the furnace. One probe views radiation emanating from the wafer through a gap in the lamp array. The other probe has a wide field of view to include lamp radiation. The accuracy of Lucent devices, determined from process results on wafers with various emissivities, is typically in the range of 12°C to 18°C at three standard deviations.

Impact of rapid thermal annealing and hydrogenation on the doping concentration and carrier mobility in solid phase crystallized poly-Si thin films

2011 ◽  
Vol 1321 ◽  
Author(s):  
A. Kumar ◽  
P.I. Widenborg ◽  
H. Hidayat ◽  
Qiu Zixuan ◽  
A.G. Aberle
Keyword(s):  
Thin Films ◽  
Electronic Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Carrier Mobility ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
Dopant Activation ◽  
Hall Effect Measurements ◽  
Probe Measurements

ABSTRACTThe effect of the rapid thermal annealing (RTA) and hydrogenation step on the electronic properties of the n+ and p+ solid phase crystallized (SPC) poly-crystalline silicon (poly-Si) thin films was investigated using Hall effect measurements and four-point-probe measurements. Both the RTA and hydrogenation step were found to affect the electronic properties of doped poly-Si thin films. The RTA step was found to have the largest impact on the dopant activation and majority carrier mobility of the p+ SPC poly-Si thin films. A very high Hall mobility of 71 cm2/Vs for n+ poly-Si and 35 cm2/Vs for p+ poly-Si at the carrier concentration of 2×1019 cm-3 and 4.5×1019 cm-3, respectively, were obtained.

Characterization of Low Temperature Polysilicon TFTs with Self-Aligned Graded LDD Structure

2001 ◽  
Vol 685 ◽  
Author(s):  
Ching-Wei Lin ◽  
Li-Jing Cheng ◽  
Yin-Lung Lu ◽  
Huang-Chung Cheng
Keyword(s):  
Low Temperature ◽  
Leakage Current ◽  
High Speed ◽  
High Reliability ◽  
Activation Process ◽  
Active Matrix ◽  
Dopant Activation ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Excimer Laser Irradiation

AbstractA simple process sequence for fabrication of low temperature polysilicon (LTPS) TFTs with self-aligned graded LDD structure was demonstrated. The graded LDD structure was self-aligned by side-etch of Al under the photo-resist followed by excimer laser irradiation for dopant activation and laterally diffusion. The graded LDD polysilicon TFTs were suitable for high-speed operation and active matrix switches applications because they possessed low-leakage-current characteristic without sacrificing driving capability significantly and increasing overlap capacitance. The leakage current of graded LDD polysilicon TFTs at Vd = 5V and Vg = −10V could attain to below 1pA/μm without any hygrogenation process, when proper LDD length and laser activation process were applied. The on/off current ratios of these devices were also above 108. Furthermore, due to graded dopant distribution in LDD regions, the drain electric field could be reduced further, and as a result, graded LDD polysilicon TFTs provided high reliability for high voltage operation.

High dopant activation of phosphorus in Ge crystal with high-temperature implantation and two-step microwave annealing

2016 ◽  
Vol 109 (12) ◽  
pp. 122103 ◽  
Author(s):  
Tzu-Lang Shih ◽  
Yin-Hsien Su ◽  
Wen-Hsi Lee
Keyword(s):  
High Temperature ◽  
Dopant Activation ◽  
Microwave Annealing
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