Characterization of Low Temperature Polysilicon TFTs with Self-Aligned Graded LDD Structure

2001 ◽  
Vol 685 ◽  
Author(s):  
Ching-Wei Lin ◽  
Li-Jing Cheng ◽  
Yin-Lung Lu ◽  
Huang-Chung Cheng
Keyword(s):  
Low Temperature ◽  
Leakage Current ◽  
High Speed ◽  
High Reliability ◽  
Activation Process ◽  
Active Matrix ◽  
Dopant Activation ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Excimer Laser Irradiation

AbstractA simple process sequence for fabrication of low temperature polysilicon (LTPS) TFTs with self-aligned graded LDD structure was demonstrated. The graded LDD structure was self-aligned by side-etch of Al under the photo-resist followed by excimer laser irradiation for dopant activation and laterally diffusion. The graded LDD polysilicon TFTs were suitable for high-speed operation and active matrix switches applications because they possessed low-leakage-current characteristic without sacrificing driving capability significantly and increasing overlap capacitance. The leakage current of graded LDD polysilicon TFTs at Vd = 5V and Vg = −10V could attain to below 1pA/μm without any hygrogenation process, when proper LDD length and laser activation process were applied. The on/off current ratios of these devices were also above 108. Furthermore, due to graded dopant distribution in LDD regions, the drain electric field could be reduced further, and as a result, graded LDD polysilicon TFTs provided high reliability for high voltage operation.

Low Temperature Tantalum Pentoxide Thin Films

1992 ◽  
Vol 284 ◽  
Author(s):  
Kee-Won Kwon ◽  
Chang-Seok Kang ◽  
Tai-su Park ◽  
Yong-Bin Sun ◽  
Neal Sandler ◽  
...  
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Leakage Current ◽  
Single Phase ◽  
High Reliability ◽  
Current Source ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Temperature Deposition ◽  
Post Deposition

ABSTRACTTa2O5 films of high reliability and low leakage current density were obtained by low temperature deposition and subsequent high temperature oxygen anneal. At higher temperatures than 410°C, growth was governed by the formation of radicals in gas phase and oxidation on the surface, while at lower temperatures by the dissociation of reactant on the surface of substrates. As a result, the films deposited at lower temperatures had undensified structures, and contained more carbon that might be a leakage current source in Ta2O5 film. During post-deposition heat treatment in 800°C oxidating ambient, carbon was removed away and silicon was diffused from the substrate into the Ta2O5 film efficiently for its as-grown porous structure. After oxygen anneal, low temperature films get denser and are crystallized to mixed phase of orthorhombic and hexagonal Ta2O5, while high temperature films crystallized to orthorhombic single phase. Ta2O5 capacitor with low temperature films showed superior leakage characteristics applicable to sub-half micron memory devices.

Development of high k/III-V (InGaAs, InAs, InSb) structures for future low power, high speed device applications

2013 ◽  
Vol 1538 ◽  
pp. 291-302
Author(s):  
Edward Yi Chang ◽  
Hai-Dang Trinh ◽  
Yueh-Chin Lin ◽  
Hiroshi Iwai ◽  
Yen-Ku Lin
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
High Speed ◽  
High Performance ◽  
Gate Oxide ◽  
Chemical Cleaning ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K ◽  
Cleaning Methods

ABSTRACTIII-V compounds such as InGaAs, InAs, InSb have great potential for future low power high speed devices (such as MOSFETs, QWFETs, TFETs and NWFETs) application due to their high carrier mobility and drift velocity. The development of good quality high k gate oxide as well as high k/III-V interfaces is prerequisite to realize high performance working devices. Besides, the downscaling of the gate oxide into sub-nanometer while maintaining appropriate low gate leakage current is also needed. The lack of high quality III-V native oxides has obstructed the development of implementing III-V based devices on Si template. In this presentation, we will discuss our efforts to improve high k/III-V interfaces as well as high k oxide quality by using chemical cleaning methods including chemical solutions, precursors and high temperature gas treatments. The electrical properties of high k/InSb, InGaAs, InSb structures and their dependence on the thermal processes are also discussed. Finally, we will present the downscaling of the gate oxide into sub-nanometer scale while maintaining low leakage current and a good high k/III-V interface quality.

High-Performance Poly-Si TFTs with Multiple Selectively Doped Regions in the Active Layer

2000 ◽  
Vol 621 ◽  
Author(s):  
Min-Cheol Lee ◽  
Juhn-Suk Yoo ◽  
Kee-Chan Park ◽  
Sang-Hoon Jung ◽  
Min-Koo Han ◽  
...  
Keyword(s):  
Leakage Current ◽  
Excimer Laser ◽  
High Performance ◽  
Laser Annealing ◽  
Channel Length ◽  
Depletion Region ◽  
Excimer Laser Annealing ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Excimer Laser Irradiation

ABSTRACTWe have proposed and fabricated a new poly-Si TFT that employs selectively doped regions between the source and drain in order to reduce leakage current without the sacrifice of the on current. In the proposed poly-Si TFTs, the selectively doped regions where doping concentration is identical to that of source/drain, reduce the effective channel length during the on state. Under the off state, the selectively doped regions may reduce the lateral electric field induced in the depletion region near drain so that the leakage current reduces considerably. The experimental data of the proposed TFT shows that it has the high on-current, low leakage current and low threshold voltage when compared with conventional TFT. The fabrication steps for the proposed TFT are reduced because ion-implantation for source/drain and selectively doped regions is performed simultaneously prior to an excimer laser irradiation. It should be noted that, in the proposed TFT, only one excimer laser annealing is required while two excimer laser annealing steps are required in conventional TFT.

scholarly journals Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current

2014 ◽  
Vol 61 (12) ◽  
pp. 4047-4055 ◽  
Author(s):  
Maryam Shayesteh ◽  
Dan O' Connell ◽  
Farzan Gity ◽  
Philip Murphy-Armando ◽  
Ran Yu ◽  
...  
Keyword(s):  
Leakage Current ◽  
Thermal Annealing ◽  
Dopant Activation ◽  
Low Leakage ◽  
Low Leakage Current

First-principles study of the electronic structure of Pb(ZrTiNb)O3 (PZTN) systems

2003 ◽  
Vol 784 ◽  
Author(s):  
Hiromu Miyazawa ◽  
Takamitsu Higuchi ◽  
Taku Aoyama ◽  
Takeshi Kijima ◽  
Eiji Natori ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Oxygen Vacancy ◽  
Leakage Current ◽  
First Principles ◽  
Nearest Neighbor ◽  
High Reliability ◽  
Orbital Energy ◽  
Low Leakage ◽  
Bandgap Narrowing ◽  
Low Leakage Current

ABSTRACTUsing first principles calculations, we have investigated the electronic structure of Pb(ZrTiNb)O3 (PZTN), a system with a low leakage current and high reliability in thin films. We proposed that in PZTN, the oxygen vacancy is suppressed due to the addition of a Nb atom at the B site and that this change prevents a bandgap narrowing which would enhance the leakage current. The oxygen vacancy in the perovskite structure reduces the bandgap because it lowers the d orbital energy of the nearest-neighbor transition metal through the Madelung potential; this bandgap narrowing induces the leakage current in conventional Pb(ZrTi)O3 (PZT) systems with the Shottky type Pb-O deficit. In contrast, the PZTN systems, which also have the Pb deficit but lack the oxygen vacancy, can maintain the bandgap, and attain a low leakage current.

Low Leakage Current Patterned Polymeric Transistors with PAG Assisted Cross-linking PVP as Gate Dielectric and Passivation Layers

2008 ◽  
Vol 1091 ◽  
Author(s):  
Cheng-Chin Liu ◽  
Kuo-Jui Chang ◽  
Feng-Yu Yang ◽  
Ta-Chuan Liao ◽  
Huang-Chung Cheng
Keyword(s):  
Low Temperature ◽  
Leakage Current ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Thin Film Transistor ◽  
Subthreshold Swing ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Passivation Layers ◽  
Amorphous Si

AbstractWe have successfully proposed a patterned P3HT thin-film transistor with cross-linked PVP as a passivation material which was cured at low temperature. The active P3HT layer was isolated via photolithographic technique and O2 plasma RIE etching process. In this method, the leakage current could be reduced effectively compared with that of non-patterned device. Although the mobility was degraded 40 %, but the on/off ratio was significantly improved by over three orders and also the subthreshold swing was compatible with the amorphous Si-TFTs (∼1.5 V/decade). Moreover, we also employed this low temperature curing PVP (120 0C) films as the gate dielectrics which exhibited excellent insulating property with high on/off ratio 1.58×104 and good subthreshold swing 1.66 V/decade.

DIELECTRIC FORMATION AND ELECTRICAL CHARACTERIZATION OF SINTERED TANTALUM SLUGS

2007 ◽  
Vol 21 (02n03) ◽  
pp. 123-128 ◽  
Author(s):  
R. GOVINDAIAH ◽  
T. BALAJI ◽  
ARBIND KUMAR ◽  
N. PARASURAM ◽  
Y. PURUSHOTHAM ◽  
...  
Keyword(s):  
Leakage Current ◽  
High Reliability ◽  
Chemical Properties ◽  
Electrical Characterization ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Lcr Meter ◽  
Physical And Chemical ◽  
And Chemical Properties

The present electronic industry requires capacitors having high capacitance with lower volume and space, high reliability and low leakage current. The solid tantalum capacitor ideally meets such requirements. In the present paper, the electrical characterization of tantalum anodes prepared from sodium reduced tantalum powder has been described. The capacitance, DC leakage current are measured for tantalum anodes made with different particle sizes of powders using the LCR Meter and DC Leakage Tester and compared with the physical and chemical properties. Interestingly, it was found that the DC leakage current decreases with decrease in particle size on contrary to the surface area. Besides, a trade-off appears imminent to establish the formation voltage and DC leakage current relationship.

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