Table 91. H2 18O (H18OH): Experimental wavenumber, intensity, and line shape parameter for the (010)–(000) transitions in the range 1005–2310 cm–1

2013 ◽  
pp. 292-316
Author(s):  
G. Guelachvili ◽  
N. Picqué
Keyword(s):  
Line Shape ◽  
Shape Parameter ◽  
Line Shape Parameter

scholarly journals Dyson line and modified Dyson line in the EPR measurements

Nukleonika ◽  
2015 ◽  
Vol 60 (3) ◽  
pp. 385-388 ◽  
Author(s):  
Volodymyr Popovych ◽  
Mariusz Bester ◽  
Ireneusz Stefaniuk ◽  
Marian Kuzma
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Line Shape ◽  
Resonance Line ◽  
Shape Parameter ◽  
Resonance Field ◽  
Ferromagnetic Semiconductors ◽  
Paramagnetic Resonance ◽  
The Right ◽  
Electron Paramagnetic ◽  
Line Shape Parameter

Abstract The difficulty in determining the electron paramagnetic resonance (EPR) line parameters of ferromagnetic semiconductors has been addressed. For these materials, the resonance line is very broad and lies at low resonance field, so that only a part of the line can be detected experimentally. Moreover, the line is of asymmetric (Dysonian) shape as described by the line shape parameter α. We have compared values of line parameters derived by computer fitting of the whole experimental EPR line to the Dyson function (or modified Dyson function) with the values obtained by applying this procedure to the left and the right half of the line.

Autoionisation in Atomspektren

1968 ◽  
Vol 23 (1) ◽  
pp. 137-151
Author(s):  
F. J. Comes ◽  
H. G. Sälzer ◽  
G. Schumpe
Keyword(s):  
Numerical Calculation ◽  
Cross Sections ◽  
Line Shape ◽  
Shape Parameter ◽  
Atomic Gases ◽  
Rare Gases ◽  
Rydberg Series ◽  
Ionic States ◽  
Line Shape Parameter ◽  
Absorption Measurements

A detailed discussion of the phenomenon of autoionization and its influence on the absorption spectra of atomic gases is given. Some consideration is devoted to the calculation of cross sections. This theory is applied to the autoionizing Rydberg levels lying above the 2P3/2 threshold of the rare gases krypton and xenon. A numerical calculation is decribed which alows the important parameters of Rydberg series to be calculated. These parameters are the so called unperturbed continuum, the lifetime and oscillator strength of the autoionizing states, the line shape parameter and the quantum defect. From absorption measurements in argon and krypton considerations follow concerning the behaviour of these terms at threshold. A further result of the calculations is the transition probality into the ionic states 2P3/2 and 2P1/2 at the 2P1/2 limit. These values are compared with measured intensities of photoelectrons from a retarding potential experiment.

Slow Positron Annihilation in Ion-Implanted Silicon

2008 ◽  
Vol 280-281 ◽  
pp. 21-28 ◽  
Author(s):  
Girjesh Singh ◽  
S.B. Shrivastava ◽  
M.H. Rathore
Keyword(s):  
Positron Annihilation ◽  
Shape Parameter ◽  
Positron Energy ◽  
Slow Positron ◽  
Vacancy Clusters ◽  
S Parameter ◽  
Trapping Model ◽  
Line Shape Parameter ◽  
Incident Positron ◽  
Ion Implanted

The mechanism of slow positron annihilation in ion-implanted Si has been discussed in terms of the Diffusion-Trapping model (DTM). The trapping of positron has been considered in native vacancies (monovacancies) and ion induced vacancies i.e. vacancy clusters. The model has been used to calculate the Doppler broadening line shape parameter (S-parameter) as a function of incident positron energy for different ion-implanted Si. It has been found that at lower energies the monovacancies and vacancy clusters both contribute to the S-parameter while, with the increase in positron energy the vacancy clusters are reduced. The S-parameter is found to be dependent on the fluency of the implanted ions.

Slow Positron Studies of Defects in Si-Doped GaAs

2006 ◽  
Vol 251-252 ◽  
pp. 51-58
Author(s):  
B. Godbole ◽  
N. Badera ◽  
S.B. Shrivastava ◽  
K.P. Joshi
Keyword(s):  
Point Defects ◽  
Shape Parameter ◽  
Positron Lifetime ◽  
Doppler Broadening ◽  
Slow Positron ◽  
Si Doping ◽  
S Parameter ◽  
Trapping Model ◽  
Si Doped ◽  
Line Shape Parameter

The mechanism of slow positron annihilation in Si-doped GaAs has been discussed in terms of the diffusion trapping model (DTM). The trapping of positrons has been considered in SiAs acceptors i.e. shallow defects and in VGa-SiGa vacancy complexes. The model has been used to obtain the Doppler broadening line shape parameter (S-parameter) and average positron lifetime in Si-doped GaAs, for a temperature range 20K to 290K and for different doping concentrations. Observations are made regarding the effect of doping on the nature and concentration of point defects. The change in point defect concentration due to Si- doping has been found to be proportional to the doping concentration. The effect of detrapping from the shallow defects has been found to be important at higher temperatures.

scholarly journals Molecular Resonances Observed in the Predissociation of Cs2

1995 ◽  
Vol 16 (1) ◽  
pp. 19-29 ◽  
Author(s):  
Bongsoo Kim ◽  
Keitaro Yoshihara
Keyword(s):  
Molecular Beam ◽  
Shape Parameter ◽  
Supersonic Jet ◽  
Broad Absorption ◽  
Broad Absorption Band ◽  
Line Shapes ◽  
Sign Change ◽  
Source State ◽  
Molecular Resonances ◽  
Line Shape Parameter

Very cold molecular beam of Cs2 is generated by a high temperature supersonic jet source. State-specific photofragment yield spectrum is obtained in the orange band of Cs2. Asymmetric line shapes are observed. The Fano line shape parameter, q, shows a gradual sign change, which is called “q-reversal”. A very broad absorption band which has about 50 cm-1 width is observed and explained to occur through the perturbation by the D1∑u+ state. The complex resonance line shapes are attributed to the interfering resonances.

Sign in / Sign up

Export Citation Format

Share Document