Slow Positron Studies of Defects in Si-Doped GaAs

2006 ◽  
Vol 251-252 ◽  
pp. 51-58
Author(s):  
B. Godbole ◽  
N. Badera ◽  
S.B. Shrivastava ◽  
K.P. Joshi

The mechanism of slow positron annihilation in Si-doped GaAs has been discussed in terms of the diffusion trapping model (DTM). The trapping of positrons has been considered in SiAs acceptors i.e. shallow defects and in VGa-SiGa vacancy complexes. The model has been used to obtain the Doppler broadening line shape parameter (S-parameter) and average positron lifetime in Si-doped GaAs, for a temperature range 20K to 290K and for different doping concentrations. Observations are made regarding the effect of doping on the nature and concentration of point defects. The change in point defect concentration due to Si- doping has been found to be proportional to the doping concentration. The effect of detrapping from the shallow defects has been found to be important at higher temperatures.

2008 ◽  
Vol 280-281 ◽  
pp. 21-28 ◽  
Author(s):  
Girjesh Singh ◽  
S.B. Shrivastava ◽  
M.H. Rathore

The mechanism of slow positron annihilation in ion-implanted Si has been discussed in terms of the Diffusion-Trapping model (DTM). The trapping of positron has been considered in native vacancies (monovacancies) and ion induced vacancies i.e. vacancy clusters. The model has been used to calculate the Doppler broadening line shape parameter (S-parameter) as a function of incident positron energy for different ion-implanted Si. It has been found that at lower energies the monovacancies and vacancy clusters both contribute to the S-parameter while, with the increase in positron energy the vacancy clusters are reduced. The S-parameter is found to be dependent on the fluency of the implanted ions.


2010 ◽  
Vol 307 ◽  
pp. 85-92
Author(s):  
S.B. Shrivastava ◽  
Aman Deep Acharya ◽  
R. Sharma

The diffusion trapping model has been applied to slow positron annihilation in He+ irradiated polystyrene and polystyrene – polystyrene bilayers. The S-parameter and the positron lifetime have been calculated as a function of the incident positron energy. The effect of the fluence upon the nature of the S-parameter curve has been discussed. It has been found that a change in fluence affects positronium formation. The transition rate for surface to positronium formation has been found to be dependent upon the fluence and the atomic number of the irradiated ion. The lifetime results show that, at low energy, the o-Ps annihilates mainly at the polymeric surface. The free volume hole concentration is found to decrease at low energy, and becomes constant at higher energies.


2010 ◽  
Vol 295-296 ◽  
pp. 1-10
Author(s):  
Aman Deep Acharya ◽  
Girjesh Singh ◽  
S.B. Shrivastava

The Diffusion Trapping Model has been used to obtain the positron annihilation Doppler broadening lineshape parameter in ZnO and O+, B+, N+, Al+ implanted ZnO films. The concentration of vacancy clusters is found to be related to the atomic number and the fluence of the implanted ion. The S-parameter is found to be largest in the case of implantation of Al+ ions and is minimum for the implantation of B+ ions. Thus, the vacancy clusters are found to be largest in the case of Al+ implantation. The calculated results have been compared with the experimental value.


1992 ◽  
Vol 262 ◽  
Author(s):  
A. Uedono ◽  
Y. Ujihira ◽  
L. Wei ◽  
S. Tanigawa

ABSTRACTNative defects in Si-doped, Zn-doped and undoped GaAs grown by horizontal Bridgman (HB) method and molecular beam epitaxiy (MBE) were studied by a monoenergetic positron beam. Positron lifetime spectra and Doppler broadening profiles were also measured by using energetic positrons. It was found that monovacancies were usually found in Si-doped HB-GaAs, however, divacancies were created in a specimen with low impurity concentration. For Zn-doped HB-GaAs, interstitial clusters were found to be major type of defects. The high concentration of monovacancies and of divacancies coexist in heavily Si-doped MBE-GaAs. These vacancy-complexes were found to act to reduce the concentration of free carriers.


1998 ◽  
Vol 552 ◽  
Author(s):  
Werner Puff ◽  
Bernd Logar ◽  
Adam G. Balogh

ABSTRACTVacancy-like defects in NiAl in the composition range 47 at.-% < CNi < 53 at.-% are investigated by means of positron lifetime spectroscopy and Doppler-broadening measurements. The observed lifetimes in the annealed samples confirm that defects are quenched-in during the production of the samples. Isochronal annealing of samples quenched at 1600°C and after proton irradiation show that the induced defects are quite different.


2014 ◽  
Vol 70 (a1) ◽  
pp. C1800-C1800
Author(s):  
Brigitte Bitschnau ◽  
Franz Mautner ◽  
Peter Parz ◽  
Werner Puff ◽  
Robert Würschum ◽  
...  

Lithium-ion batteries have developed into most advanced battery systems, e.g. laptops and mobile phones. LiCoO2 is a typical intercalation battery cathode material. However, reversible charge-discharge cycling of LiCoO2 is only possible down to 50% of the available Li-ions since further removal of Li-ions drastically reduces the capacity and cycle stability. The formation of vacancy-type defects during the charging process in LixCoO2 battery cathodes was investigated by XRD and position life-time spectroscopy and Doppler broadening of positron-electron annihilation (PA) radiation as defect specific techniques [1]. Li+-extraction, which in a battery mode corresponds to charging, was performed at 293 K under electrochemical control in a 3-electrode test-cell with a Maccor Series 4000 battery tester. The composition of the lithium-ion electrode material used was: 88wt.% LiCoO2 particles, 7 wt.% carbon black as conducting agent, 5 wt.% binder material (polyvinylidene difluoride hexafluoropropylene copolymer). Structural analysis of the electrode samples was performed by means of X-Ray diffraction using a Bruker D8 Advance diffractometer in Bragg-Brentano geometry with Cu-Kα radiation. Diffractograms were measured in the 2-Theta angle range from 150to 1300and were analysed by Rietveld refinement with the programs FULLPROF [2] and X'PertHighScorePlus (Panalytical). For positron annihilation measurements a positron source (22NaCl) was sandwiched between two identical LiCoO2 electrode samples. Positron lifetime measurements were performed with a fast-fast spectrometer with a time resolution of 221 ps. The spectra were analysed by using the program pfposfit [3]. Doppler broadening (DB) measurements were performed in a coincidence setup with two high purity Ge detectors.with energy resolution for the 511 keV annihilation γ-line in the detector system corresponds to ca. 0.88keV (FWHM). Both the Doppler broadening S parameter as well as the positron lifetime component τ1 exhibit a characteristic variation with increasing amount of Li+-extraction; the S-parameter and τ1 first increases upon decreasing x from 1 to 0.6. Further Li+-extraction causes a decrease of S and τ1 (x = 0.55), followed by a re-increase for x<0.55. Conclusions: The regime of reversible charging is dominated by vacancy-type defects on the Li+-sublattice the size of which increases with increasing Li+-extraction. Indication is found that Li+-reordering which occurs at the limit of reversible Li+-extraction (x = 0.55) causes a transition from the two-dimensional agglomerates into one-dimensional vacancy chains. Degradation upon further Li+-extraction is accompanied by the formation of vacancy complexes on the Co- and anion sublattice.


2008 ◽  
Vol 607 ◽  
pp. 186-188
Author(s):  
J. Wang ◽  
V.O. Jobando ◽  
C.A. Quarles

Carbon black (CB) is essentially carbon in the form of extremely fine particle aggregates (100-200nm) having an amorphous molecular structure. Oil absorption or compressed dibutyl phthalate (CDBP) and iodine adsorption or nitrogen surface area (N2SA) are parameters commonly used to describe CB morphology or structure and the surface area of CB available for reaction with rubber. We have used both positron lifetime and Doppler broadening spectroscopy to study these two parameters for a variety of rubber CB composite samples. The o-Ps pickoff lifetime depends only on the type of rubber and is independent of CDBP and N2SA. However, the o-Ps lifetime intensity, I3, and the S parameter decrease with both CDBP and N2SA.


2007 ◽  
Vol 14 (01) ◽  
pp. 43-47
Author(s):  
M. O. ABDEL-HAMED

The migration enthalpy [Formula: see text] for point defects and dislocations is estimated by using positron lifetime technique; point defects and dislocations are produced as a result of plastic deformation at room temperature (RT) for the decomposition sequence, namely 5005, 5052 and 5083, of commercial Al – Mg systems. The results show that [Formula: see text] for the three systems increases as the Mg content is increased to u1=0.34±0.09 eV, u2=0.39±0.12 eV, and u3=0.42±0.08 eV for the point defect state, and u1=1.12±0.08 eV and u2=1.37±0.13 eV for the dislocation state to 5005 and 5052, respectively. All the data are analyzed in terms of the two state trapping model.


1993 ◽  
Vol 320 ◽  
Author(s):  
Ping Liu ◽  
Chenglu Lin ◽  
Zuyao Zhou ◽  
Huiming Weng ◽  
Bingzong Li ◽  
...  

ABSTRACTA slow positron beam was used to investigate the solid state reaction of Co/Si and Co/Ti/Si. Variable-energy (0-20 keV) positrons were implanted into samples at different depths. The Doppler broadening of the annihilation -y-ray energy spectra, measured at a number of different incident positron energies were characterized a line-shape parameter “5”. It was found that the measured S parameters were sensitive to thin film reaction and crystalline characteristics. In particular, the S parameter of epitaxial CoSi2 formed by the ternary reaction was quit different from that of the polycrystalline CoSi2 formed by direct reaction of Co with Si.


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