Heavy-Ion Rutherford Backscattering Spectrometry

1993 ◽  
pp. 49-55
Author(s):  
D. J. O’Connor ◽  
Q. Yang
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Heavy Ion ◽  
Rutherford Backscattering

Radiation Enhanced Diffusion in Ion-Implanted Glasses and Glass/Metal Couples

1983 ◽  
Vol 27 ◽  
Author(s):  
G. W. Arnold
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Diffusion Mechanism ◽  
Glass Network ◽  
Heavy Ion ◽  
Rutherford Backscattering ◽  
Enhanced Diffusion ◽  
Mixed Alkali ◽  
Radiation Enhanced Diffusion ◽  
Glass Metal ◽  
Ion Implanted

ABSTRACTIon implantation causes alkali migration to the surface in alkali silicate glasses. Rutherford backscattering spectrometry was used to follow this depletion. Room temperature implantations of 5×1016 250 keV Xe/cm2 in 12M20·88SiO2 (M = Li,Na,K,Rb,Cs) removes approximately equal numbers (within a factor of 2) of alkali from the glass. Low temperature (77K) implants significantly reduce the alkali loss. These results imply a radiationenhanced diffusion mechanism in which the alkali interchanges with the products of the collision cascade, with the kinetics being limited by the radiation damage components. The results for mixed-alkali glasses ((12−x)M2O·xCs20·88Si02) give further evidence for this process. In glass/'metal couples, radiation enhanced diffusion allows the interchange of glass network components with deposited metals. Rutherford backscattering spectrometry was used to follow the interchange of silicate and phosphate glass components with metal ions near the heavy-ion implanted interface between glass substrate and metal (Al,Zr) films.

Effect of glass composition on diffusion of cesium in borosilicate glass

2006 ◽  
Vol 94 (6-7) ◽  
Author(s):  
Sumit Kumar ◽  
Neetika Rawat ◽  
A. Bhattacharya ◽  
B. S. Tomar ◽  
V. K. Shrikhande ◽  
...  
Keyword(s):  
Borosilicate Glass ◽  
Rutherford Backscattering Spectrometry ◽  
Glass Composition ◽  
Heavy Ion ◽  
Rutherford Backscattering

SummaryHeavy ion Rutherford backscattering spectrometry, with 30 MeV

Investigation of Metal/GaAs Reactions by Heavy Ion Rutherford Backscattering Spectrometry(HIRBS)

1986 ◽  
Vol 69 ◽  
Author(s):  
Kin Man Yu ◽  
J. M. Jaklevic ◽  
E. E. Haller
Keyword(s):  
Heavy Ions ◽  
Rutherford Backscattering Spectrometry ◽  
Analytical Techniques ◽  
Heavy Ion ◽  
Rutherford Backscattering ◽  
Contact Structures ◽  
Ternary Compounds ◽  
Thermally Activated ◽  
Binary Compounds ◽  
Metallurgical Reactions

AbstractThermally activated metallurgical reactions between GaAs and various metals of potential importance in contact structures were studied using Heavy Ion Rutherford Backscattering Spectrometry (HIRBS). The improved mass resolution obtained with heavy ions (160) as projectiles for backscattering measurements facilitated the identification of the various intermetallic compounds formed on GaAs. The metal/GaAs systems investigated in this study included Pt/GaAs, Pd/GaAs, and Ni/GaAs. Three different binary compounds were formed in the Pt/GaAs system during annealing. Complete reaction between 1200Å of Pt and GaAs was observed after annealing at 500°C for 20 min. Reactions in Pd/GaAs and Ni/GaAs systems were, however, very different from that of Pt/GaAs. Both Pd and Ni formed ternary compounds with GaAs. Detailed information on the various compound compositions of the three systems as measured by HIRBS is presented. Comparisons of results on similar systems obtained by using other analytical techniques are discussed.

Stoichiometric Determination of Graphite Intercalation Compounds Using Rutherford Backscatiering Spectrometry

1983 ◽  
Vol 27 ◽  
Author(s):  
L. Salamanca-Riba ◽  
B.S. Elman ◽  
M.S. Dresselhaus ◽  
T. Venkatesan
Keyword(s):  
Experimental Error ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
Intercalation Compounds ◽  
Graphite Intercalation Compounds ◽  
X Ray ◽  
Donor And Acceptor ◽  
Graphite Intercalation ◽  
Non Destructive

ABSTRACTRutherford backscattering spectrometry (RBS) is used to characterize the stoichiometry of graphite intercalation compounds (GIC). Specific application is made to several stages of different donor and acceptor compounds and to commensurate and incommensurate intercalants. A deviation from the theoretical stoichiometry is measured for most of the compounds using this non-destructive method. Within experimental error, the RBS results agree with those obtained from analysis of the (00ℓ) x-ray diffractograms and weight uptake measurements on the same samples.

scholarly journals Rutherford backscattering spectrometry analysis of InGaAs nanostructures

2019 ◽  
Vol 37 (2) ◽  
pp. 020601 ◽  
Author(s):  
Grazia Laricchiuta ◽  
Wilfried Vandervorst ◽  
Ian Vickridge ◽  
Matej Mayer ◽  
Johan Meersschaut
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
Spectrometry Analysis
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