Doping Efficiency of Boron Trifluoride in the Preparation of P-Type Amorphous Silicon Carbide Thin Films

1991 ◽  
pp. 157-160 ◽  
Author(s):  
J. J. Gandía ◽  
M. T. Gutiérrez ◽  
J. Cárabe
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Boron Trifluoride ◽  
Amorphous Silicon Carbide ◽  
P Type

Structural relaxation of amorphous silicon carbide thin films in thermal annealing

2008 ◽  
Vol 516 (12) ◽  
pp. 3855-3861 ◽  
Author(s):  
Kun Xue ◽  
Li-Sha Niu ◽  
Hui-Ji Shi ◽  
Jiwen Liu
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Structural Relaxation ◽  
Amorphous Silicon Carbide

Silicon nanocrystals on amorphous silicon carbide alloy thin films: Control of film properties and nanocrystals growth

2012 ◽  
Vol 522 ◽  
pp. 136-144 ◽  
Author(s):  
Jérémy Barbé ◽  
Ling Xie ◽  
Klaus Leifer ◽  
Pascal Faucherand ◽  
Christine Morin ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Silicon Nanocrystals ◽  
Film Properties ◽  
Amorphous Silicon Carbide ◽  
Carbide Alloy

RF-PECVD deposition and optical properties of hydrogenated amorphous silicon carbide thin films

2014 ◽  
Vol 40 (7) ◽  
pp. 9791-9797 ◽  
Author(s):  
Enlong Chen ◽  
Guoping Du ◽  
Yu Zhang ◽  
Xiaomei Qin ◽  
Hongmei Lai ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Optical Properties ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Amorphous Silicon Carbide ◽  
Hydrogenated Amorphous

Effect of deposition temperature on the properties of amorphous silicon carbide thin films

2006 ◽  
Vol 515 (2) ◽  
pp. 651-653 ◽  
Author(s):  
J. Huran ◽  
I. Hotový ◽  
J. Pezoltd ◽  
N.I. Balalykin ◽  
A.P. Kobzev
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Deposition Temperature ◽  
Amorphous Silicon Carbide

scholarly journals Investigations on phosphorous doped hydrogenated amorphous silicon carbide thin films deposited by a filtered cathodic vacuum arc technique for photo detecting applications

RSC Advances ◽  
2014 ◽  
Vol 4 (97) ◽  
pp. 54388-54397 ◽  
Author(s):  
R. K. Tripathi ◽  
O. S. Panwar ◽  
A. K. Kesarwani ◽  
Ishpal Rawal ◽  
B. P. Singh ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Vacuum Arc ◽  
Amorphous Silicon Carbide ◽  
Silicon Target ◽  
Filtered Cathodic Vacuum Arc ◽  
Hydrogenated Amorphous

This paper reports the growth and properties of phosphorous doped hydrogenated amorphous silicon carbide thin films deposited by a filtered cathodic vacuum arc technique using P doped solid silicon target as a cathode in the presence of acetylene gas.

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