Hydrogenated amorphous silicon-carbide thin films with high photo-sensitivity prepared by layer-by-layer hydrogen annealing technique

2013 ◽  
Vol 270 ◽  
pp. 287-291 ◽  
Author(s):  
S.X. Li ◽  
Y.Q. Cao ◽  
J. Xu ◽  
Y.J. Rui ◽  
W. Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Layer By Layer ◽  
Hydrogen Annealing ◽  
Amorphous Silicon Carbide ◽  
Hydrogenated Amorphous

RF-PECVD deposition and optical properties of hydrogenated amorphous silicon carbide thin films

2014 ◽  
Vol 40 (7) ◽  
pp. 9791-9797 ◽  
Author(s):  
Enlong Chen ◽  
Guoping Du ◽  
Yu Zhang ◽  
Xiaomei Qin ◽  
Hongmei Lai ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Optical Properties ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Amorphous Silicon Carbide ◽  
Hydrogenated Amorphous

scholarly journals Investigations on phosphorous doped hydrogenated amorphous silicon carbide thin films deposited by a filtered cathodic vacuum arc technique for photo detecting applications

RSC Advances ◽  
2014 ◽  
Vol 4 (97) ◽  
pp. 54388-54397 ◽  
Author(s):  
R. K. Tripathi ◽  
O. S. Panwar ◽  
A. K. Kesarwani ◽  
Ishpal Rawal ◽  
B. P. Singh ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Vacuum Arc ◽  
Amorphous Silicon Carbide ◽  
Silicon Target ◽  
Filtered Cathodic Vacuum Arc ◽  
Hydrogenated Amorphous

This paper reports the growth and properties of phosphorous doped hydrogenated amorphous silicon carbide thin films deposited by a filtered cathodic vacuum arc technique using P doped solid silicon target as a cathode in the presence of acetylene gas.

Microhardness and other properties of hydrogenated amorphous silicon carbide thin films formed by plasma-enhanced chemical vapor deposition

1983 ◽  
Vol 107 (2) ◽  
pp. 201-206 ◽  
Author(s):  
M.A. Bayne ◽  
Z. Kurokawa ◽  
N.U. Okorie ◽  
B.D. Roe ◽  
L. Johnson ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Amorphous Silicon Carbide ◽  
Hydrogenated Amorphous

Structure and properties of hydrogenated amorphous silicon carbide thin films deposited by PECVD

2008 ◽  
Vol 354 (12-13) ◽  
pp. 1435-1439 ◽  
Author(s):  
Yiying Zhang ◽  
Piyi Du ◽  
Ran Zhang ◽  
Gaorong Han ◽  
Wenjian Weng
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Structure And Properties ◽  
Amorphous Silicon Carbide ◽  
Hydrogenated Amorphous

scholarly journals Enhanced Photoluminescence of Hydrogenated Amorphous Silicon Carbide Thin Films by Means of a Fast Thermal Annealing Process

Materials ◽  
2020 ◽  
Vol 13 (11) ◽  
pp. 2643 ◽  
Author(s):  
Israel Vivaldo ◽  
Roberto C. Ambrosio ◽  
Roberto López ◽  
Javier Flores-Méndez ◽  
Luis A. Sánchez-Gaspariano ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Flux Ratio ◽  
Peak Position ◽  
Annealing Process ◽  
Visible Range ◽  
Amorphous Silicon Carbide ◽  
Hydrogenated Amorphous

In this paper, the photoluminescence (PL) of hydrogenated amorphous silicon carbide (a-Si1−xCx:H) thin films obtained by Plasma Enhancement Chemical Vapor Deposition (PECVD) is reported. Strong PL is obtained after a fast annealing process for 60 s at temperatures of 200, 400, 600, and 800 °C. The thin films are characterized using Fourier Transform Infrared spectroscopy (FTIR), PL spectroscopy, and Energy-Dispersive X-ray Spectroscopy (EDS). According to the results of the structural characterization, it is deduced that a structural rearrangement of the amorphous matrix is carried out during the fast annealing process, which results in different degrees of oxidation on the a-Si1−xCx:H films. The PL peak position shifts towards higher energies as the temperature increases. The sample deposited with a silane/methane flux ratio of 37.5 at an Radio Frequency (RF) power of 6 W experiences an increase in PL intensity of more than nine times, with a displacement in the peak position from 2.5 eV to 2.87 eV, at 800 °C. From the PL analysis, we observe two emission bands: one centered in the near infrared and other in the visible range (with a blue peak). This study opens the possibility to use such thin films in the development of optoelectronics devices, with potential for application in solar cells.

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