Influence of Light-Emitting Diodes (LEDs) on Light Sensing and Signaling Networks in Plants

Author(s):  
T. Pocock
HortScience ◽  
2015 ◽  
Vol 50 (9) ◽  
pp. 1281-1284 ◽  
Author(s):  
Tessa Pocock

The technology to drive the output of individual arrays of light-emitting diodes (LEDs) on timescales down to microseconds is enabling plant scientists and growers control over irradiance- and spectrum-induced plant responses. The two light sensing and signaling networks that regulate desired plant responses involve either photoreceptors (PR) and/or photosynthesis (PSN). These networks control morphological, physiological, and developmental processes (e.g., seed development and germination, seedling development, apical meristem formation, differentiation, flowering, etc.) as well as the energy distribution within the plant. Understanding the individual plant responses and the synergy between the PR and PSN networks will assist in the selection and timing of LED light programs for crop regulation and growth. Both networks sense and respond to irradiance and narrow-band spectra between 350 and 750 nm although their modes of action are different. Comparing the PR and PSN networks and their effect on plants shows that the PR network primarily regulates developmental processes in new tissues while the PSN network regulates routine operational processes. The two networks are required for healthy plant growth and are reliant on each other for biological fitness. A balance between these two networks will result in greater plant efficacy and can be achieved by light programs whose irradiance, spectra, duration, and timing can be regulated. Replacing high-intensity discharge (HID) lamps with LEDs is a catalyst for a fundamental change in plant lighting and we are on a steep learning curve to fully realize how to fully control LED technology in plant growth applications.


2000 ◽  
Vol 660 ◽  
Author(s):  
Thomas M. Brown ◽  
Ian S. Millard ◽  
David J. Lacey ◽  
Jeremy H. Burroughes ◽  
Richard H. Friend ◽  
...  

ABSTRACTThe semiconducting-polymer/injecting-electrode heterojunction plays a crucial part in the operation of organic solid state devices. In polymer light-emitting diodes (LEDs), a common fundamental structure employed is Indium-Tin-Oxide/Polymer/Al. However, in order to fabricate efficient devices, alterations to this basic structure have to be carried out. The insertion of thin layers, between the electrodes and the emitting polymer, has been shown to greatly enhance LED performance, although the physical mechanisms underlying this effect remain unclear. Here, we use electro-absorption measurements of the built-in potential to monitor shifts in the barrier height at the electrode/polymer interface. We demonstrate that the main advantage brought about by inter-layers, such as poly(ethylenedioxythiophene)/poly(styrene sulphonic acid) (PEDOT:PSS) at the anode and Ca, LiF and CsF at the cathode, is a marked reduction of the barrier to carrier injection. The electro- absorption results also correlate with the electroluminescent characteristics of the LEDs.


2003 ◽  
Vol 764 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
J. L. Garrett ◽  
A. Ebong ◽  
L. B. Rowland ◽  
...  

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.


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