Indium Phosphide Based Dual Gate High Electron Mobility Transistor

Author(s):  
Shashank Kumar Dubey ◽  
Aminul Islam
2020 ◽  
Vol 20 (8) ◽  
pp. 4678-4683
Author(s):  
Jun Hyeok Jung ◽  
Min Su Cho ◽  
Won Douk Jang ◽  
Sang Ho Lee ◽  
Jaewon Jang ◽  
...  

In this work, we present a normally-off recessed-gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) using a TiO2/SiN dual gate-insulator. We analyzed the electrical characteristics of the proposed device and found that the dual gate-insulator device achieves higher on-state currents than the device using a SiN gate-insulator because the high-k insulator layer of the dual gate-insulator improves the gate-controllability. The device using a TiO2/SiN gate-insulator shows better gate leakage current characteristics than the device with only TiO2 gate-insulator because of the high quality SiN gate-insulator. Therefore, the device using a dual gate-insulator can overcome disadvantages of a device using only TiO2 gate-insulator. To better predict the power consumption and the switching speed, we simulated the specific on-resistance (Ron, sp) according to the gate-to-drain distance (LGD) using the two-dimensional ATLAS simulator. The proposed device exhibits a threshold voltage of 2.3 V, a maximum drain current of 556 mA/mm, a low Ron, sp of 1.45 mΩ·cm2, and a breakdown voltage of 631 V at an off-state current of 1 μA/mm with VGS = 0 V. We have confirmed that a normally-off recessed-gate AlGaN/GaN MIS-HEMT using a TiO2/SiN dual gate-insulator is a promising candidate for power electronic applications.


2004 ◽  
Vol 40 (12) ◽  
pp. 775 ◽  
Author(s):  
K. Shiojima ◽  
T. Makimura ◽  
T. Kosugi ◽  
S. Sugitani ◽  
N. Shigekawa ◽  
...  

1992 ◽  
Vol 281 ◽  
Author(s):  
Bruce Steiner ◽  
James Comas ◽  
Wen Tseng ◽  
Uri Laor

ABSTRACTThe formation of mismatch dislocations in layered semiconductor structures was found recently in high resolution monochromatic synchrotron x-radiation diffraction images to be correlated with characteristics of the substrate as well as with the layer thickness and degree of lattice mismatch of non pseudomorphic layers.1,2 We have now extended these studies to examine the accommodation to strain as a function of lattice mismatch in a series of high electron mobility transistor (HEMT) structures grown by molecular beam epitaxy (MBE) on indium phosphide substrates.Five distinct types of irregularity are observed: 1) lattice warping, 2) the formation of a nonpseudomorphic layer, 3) the formation of extended arrays of linear mismatch dislocations at the interface between the substrate and a nonpseudomorphic layer, 4) the formation of oval regions of tweed-like local lattice variation imbedded among these arrays, and 5) extended tweed-like local lattice variation over large peripheral areas in which the formation of straight mismatch dislocation arrays is not observed.Warping of the lattice is found in nearly all layered structures. A distinct layer with a different lattice parameter but without visible misfit dislocations is formed with a mismatch of 0.27 %. With increase of the mismatch to 0.5 %, the other three forms of accommodation appear in distinct regions of the structure: arrays of <011> mismatch dislocations; oval regions of tweed-like irregularity, oriented in the [011] direction; and peripheral regions of extended tweed-like local lattice variation.


2020 ◽  
pp. 2000191
Author(s):  
Diego Calvo Ruiz ◽  
Daxin Han ◽  
Giorgio Bonomo ◽  
Tamara Saranovac ◽  
Olivier Ostinelli ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document