Taguchi Analysis of Surface Roughness of TiC Thin Films Deposited by RF Magnetron Sputtering

2020 ◽  
pp. 77-85
Author(s):  
Olayinka Oluwatosin Abegunde ◽  
Esther T. Akinlabi ◽  
O. P. Oladijo
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Taguchi Analysis

Synthesis and Characterization of Ce-Doped BZT Thin Films Deposited by a RF Magnetron Sputtering Method

2006 ◽  
Vol 321-323 ◽  
pp. 1336-1339
Author(s):  
Won Seok Choi ◽  
Young Park ◽  
Jin Hyo Boo ◽  
Junsin Yi ◽  
Byung You Hong
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Film Deposition ◽  
Si Substrates ◽  
Structural And Electrical Properties ◽  
Ceramic Capacitor ◽  
Diffraction Patterns ◽  
Lower Temperature

We investigated the structural and electrical properties of the 0.5% Ce-doped Ba(ZrxTi1-x)O3 (BZT) thin films with a mole fraction of x=0.2 and a thickness of 150 nm for the MLCC (Multilayer Ceramic Capacitor) application. Ce-doped BZT films were prepared on Pt/Ti/SiO2/Si substrates by a RF magnetron sputtering system as a function of Ar/O2 ratio and substrate temperature. X-ray diffraction patterns were recorded for the samples deposited with three different substrate temperatures. The thickness and the surface roughness of the films deposited with different Ar/O2 ratios were measured. The oxygen gas, which was introduced during the film deposition, had an influence on the growth rate and the roughness of the film. The surface roughness and dielectric constant of the Ce-doped BZT film varied with Ar to O2 ratios (5:1, 2:1, and 1:1) from 1.21 nm to 2.33 nm and 84 to 149, respectively. The Ce-doped BZT film deposited at lower temperature has small leakage current and higher breakdown voltage.

A Study of the In Situ Epitaxial Growth of the 123 Ybco Films from a Stoichiometric Target by Rf Magnetron Sputtering

1989 ◽  
Vol 169 ◽  
Author(s):  
R. L. Meng ◽  
Y. Q. Wang ◽  
Y. Y. Sun ◽  
Li Gao ◽  
P. H. Hor ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Deposition Temperature ◽  
Rf Magnetron Sputtering ◽  
Transition Width ◽  
Ybco Films ◽  
Synthesis Parameters ◽  
Better Than

AbstractThe synthesis parameters have been systematically examined for the in situ growth of high temperature superconducting Y‐Ba‐Cu‐0 thin films from a stoichiometric target by rf magnetron sputtering. By properly adjusting the deposition temperature, the total sputtering (O2+Ar)‐pressure and the O2‐partial pressure, we have reproducibly obtained 123 YBCO films with a zero resistivity temperature Tcz = 84 K and a transition width of 3 K°. The films so obtained have excellent surface morphology and a surface roughness better than ∼ 5 nm.

AFM STUDIES OF VARIOUS NIOBIUM AND ALUMINIUM THIN FILMS FOR THEIR USE IN JOSEPHSON JUNCTIONS

2001 ◽  
Vol 08 (06) ◽  
pp. 689-692
Author(s):  
SHAHZAD NASEEM
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Atomic Force Microscope ◽  
Josephson Junctions ◽  
Smooth Surface ◽  
Film Surface ◽  
Rf Magnetron Sputtering ◽  
Atomic Force ◽  
Sputter Deposited

Nb thin films have been prepared with e-beam evaporation under UHV conditions, and by RF magnetron sputtering. Al thin films were deposited by resistive heating in the UHV chamber. The preparation of these films and the trilayers of Nb/AlO x /Nb are intended for their use in Josephson junctions. Surface studies of these films are undertaken by using an atomic force microscope in the noncontact mode. These studies have revealed that the sputter-deposited Nb film surface is smoother than that of the UHV e-beam evaporated with R rms values of 3.5 and 4.0 nm respectively. Al thin films have a very smooth surface, with an R rms value of only 0.9 nm. Consequently, UHV-evaporated Nb thin films deposited on top of Al thin films are smoother, with a surface roughness of 1.8 nm.

Base Pressure Effects on the Structure, Surface Roughness and Electrical Resistivity of Mo Thin Films by RF Magnetron Sputtering

2011 ◽  
Vol 213 ◽  
pp. 161-165 ◽  
Author(s):  
Ming Jer Jeng ◽  
Wen Kai Lei ◽  
Wei Lun Ku ◽  
Liann Be Chang ◽  
Ching Wen Wu ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Base Pressure ◽  
Pressure Effects ◽  
Soda Lime Glass ◽  
Soda Lime Glass Substrate ◽  
Structure Surface

Molybdenum (Mo) thin films were deposited on soda-lime glass substrate by using RF magnetron sputtering. As is well known, base pressure in sputtering is a processing parameter for preparing high quality Mo films, in addition to RF power and working pressure. The structure, surface roughness and electrical resistivity of Mo thin films were investigated at three base pressures of 1.8×10-7, 5.8×10-7and 2.7×10-6 torr. Experimental results indicate that the Mo films deposited at a low base pressure of 1.8×10-7 torr exhibit a low electrical resistivity of 8.910-6 –cm, a low root mean square value of roughness of 4.92nm and a stronger peak intensity of (110) plane than that of the other two pressures. This finding suggests that Mo films sputtered at a low base pressure have higher crystallinity, larger grain size, smoother surface morphology and lower electrical resistivity than those sputtered at a high base pressure.

scholarly journals Effect on Silicon Nitride thin Films Properties at Various Powers of RF Magnetron Sputtering

2018 ◽  
Vol 7 (4.30) ◽  
pp. 39 ◽  
Author(s):  
M K Mustafa ◽  
U Majeed ◽  
Y Iqbal
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Surface Roughness ◽  
Optical Properties ◽  
Silicon Nitride ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Silicon Nitride Films ◽  
Ftir Characterization ◽  
Sputtering Power

Silicon nitride thin films have numerous applications in microelectronics and optoelectronics fields due to their unique properties. In this work, silicon nitride thin films were produced using radio frequency (R.F.) magnetron sputtering technique at various sputtering powers. The prepared thin films were characterized with XRD, FE-SEM, FTIR, surface profiler, AFM and spectral reflectance techniques for structure, surface morphology, chemical bonding information, growth rate, surface roughness and optical properties. The results showed that silicon nitride thin films were amorphous in nature. The films were smooth and densely packed with no voids or cracks at the surface. FTIR characterization informed about Si-N bonding existence which confirmed the formation of silicon nitride films. The sputtering power showed the impetus effect on growth rate, surface roughness and optical properties of produced films.

Single Crystal, High Band Gap CdS Thin Films Grown by RF Magnetron Sputtering in Argon Atmosphere for Solar Cell Applications

2018 ◽  
Vol 10 (3) ◽  
pp. 03005-1-03005-6 ◽  
Author(s):  
Rupali Kulkarni ◽  
◽  
Amit Pawbake ◽  
Ravindra Waykar ◽  
Ashok Jadhawar ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Magnetron Sputtering ◽  
Single Crystal ◽  
Band Gap ◽  
Rf Magnetron Sputtering ◽  
Argon Atmosphere ◽  
Cds Thin Films ◽  
High Band
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