Theoretical Model and Suppressing Method of Interface Charge Accumulation in HVDC Cable Accessory: A Review

ABSTRACTWe present a first-principles characterization of the initial stages of formation of AlN films on c-plane SiC substrates. Studying the competition between two-dimensional films and three-dimensional islands as a function of Al and N abundances, we find that a two-dimensional film can wet the surface in N-rich conditions. Ordered layer-by-layer growth can proceed to some extent on this wetting layer, and is improved by the formation of an atomically mixed interface which eliminates interface charge accumulation. Our results indicate that the stable AlN films grow in the (0001) orientation on the Si-terminated SiC(0001) substrate.

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Surface and interface charge accumulation and decay of oil-paper insulation under DC voltage

IEEE Transactions on Dielectrics and Electrical Insulation ◽

10.1109/tdei.2017.006153 ◽

2017 ◽

Vol 24 (2) ◽

pp. 939-946 ◽

Cited By ~ 10

Author(s):

B. X. Du ◽

W. B. Zhu ◽

J. G. Zhang ◽

X. L. Li

Keyword(s):

Charge Accumulation ◽

Dc Voltage ◽

Surface And Interface ◽

Interface Charge ◽

Paper Insulation

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Schottky Barrier Lowering in 4H-SiC Schottky UV Detector

Materials Science Forum ◽

10.4028/www.scientific.net/msf.600-603.1215 ◽

2008 ◽

Vol 600-603 ◽

pp. 1215-1218

Author(s):

Antonella Sciuto ◽

Fabrizio Roccaforte ◽

Salvatore di Franco ◽

Vito Raineri

Keyword(s):

Schottky Barrier ◽

Thermally Grown Oxide ◽

Time Parameter ◽

Charge Accumulation ◽

Oxide Interface ◽

Uv Detector ◽

Thermally Stimulated Current ◽

Interface Charge ◽

Schottky Type ◽

Photo Current

The Schottky barrier lowering in 4H-SiC interdigit Schottky-type UV photodiode is investigated in the presence of a thermally grown oxide layer on the exposed active area. Gain photocurrent is observed and correlated with the presence of the oxide and with the charge traps at the semiconductor/oxide interface. Photo-thermally stimulated current measurements evidenced that interface charge accumulation is optically promoted. Rise and fall photo-current measurements provided the time parameter of the trapping phenomenon.

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HVDC Cable Accessory Insulation

Accelerating the Discovery of New Dielectric Properties in Polymer Insulation - Advances in Computer and Electrical Engineering ◽

10.4018/978-1-5225-2309-3.ch005 ◽

2017 ◽

pp. 160-193

Keyword(s):

Dielectric Properties ◽

Space Charge ◽

High Power ◽

Nanosized Particles ◽

Charge Accumulation ◽

Long Distance ◽

Ethylene Propylene ◽

Interface Charge ◽

Direct Fluorination ◽

Ethylene Propylene Diene Terpolymer

HVDC cables have shown great advantages for long-distance, high-power underground or underwater transmission. The performance of cable accessories, as an essential part of the HVDC networks, is a great concern to the reliability of the system. However, Cable accessories made of ethylene-propylene-diene terpolymer (EPDM), which are considered to be the weakest part of HVDC cable system, have to face the problem of space charge accumulation. Nanosized particles have been proved as an effective method to suppress the space charge accumulation in dielectric composites. This chapter presents a study aimed at clarifying the effect of nanoparticles and direct-fluorination on space charge behaviors for HVDC cable accessory insulation. Obtained results show that the dielectric properties and DC conduction for HVDC cable accessory insulation are significantly influenced and the interface charge density can be effectively suppressed by doped fillers.

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