Schottky Barrier Lowering in 4H-SiC Schottky UV Detector

2008 ◽  
Vol 600-603 ◽  
pp. 1215-1218
Author(s):  
Antonella Sciuto ◽  
Fabrizio Roccaforte ◽  
Salvatore di Franco ◽  
Vito Raineri
Keyword(s):  
Schottky Barrier ◽  
Thermally Grown Oxide ◽  
Time Parameter ◽  
Charge Accumulation ◽  
Oxide Interface ◽  
Uv Detector ◽  
Thermally Stimulated Current ◽  
Interface Charge ◽  
Schottky Type ◽  
Photo Current

The Schottky barrier lowering in 4H-SiC interdigit Schottky-type UV photodiode is investigated in the presence of a thermally grown oxide layer on the exposed active area. Gain photocurrent is observed and correlated with the presence of the oxide and with the charge traps at the semiconductor/oxide interface. Photo-thermally stimulated current measurements evidenced that interface charge accumulation is optically promoted. Rise and fall photo-current measurements provided the time parameter of the trapping phenomenon.

Erbium-Silicided Source/Drain Junction Formation by Rapid Thermal Annealing Technique for Decananometer-Scale Schottky Barrier Metal-Oxide-Semiconductor Field- Effect Transistors

2004 ◽  
Vol 810 ◽  
Author(s):  
Moongyu Jang ◽  
Yarkyeon Kim ◽  
Jaeheon Shin ◽  
Kyoungwan Park ◽  
Seongjae Lee
Keyword(s):  
Schottky Barrier ◽  
Annealing Temperature ◽  
Field Effect Transistors ◽  
Growth Conditions ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Oxide Interface ◽  
Silicide Growth ◽  
Stable Growth ◽  
Optimum Annealing Temperature

ABSTRACTThe stable growth conditions of erbium-silicide on silicon-on-insulator (SOI) are investigated considering annealing temperature, SOI and sputtered erbium thickness. From the sheet resistance measurement, X-ray diffraction and Auger electron spectroscopy analysis, the optimum annealing temperature is determined as 500°C. Also, for the stable growth of erbium- silicide on SOI, the sputtered erbium thickness should be less than 1.5 times of SOI thickness. As the SOI thickness decreases below this critical thickness, erbium-rich region is formed at the erbium-silicide and buried-oxide interface. By applying the optimized erbium-silicide growth conditions, 50-nm-gate-length n-type SB-MOSFET is manufactured, which shows the possible usage of erbium-silicide as the source and drain material in the n-type Schottky barrier MOSFETs for decananometer regime applications.

Tem Studies of Silicon-Silicon Oxide Interface Roughness

1987 ◽  
Vol 105 ◽  
Author(s):  
Kyung-Ho Park ◽  
T. Sasaki ◽  
S. Matsuoka ◽  
M. Yoshida ◽  
M. Nakano
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Oxide ◽  
Thermally Grown Oxide ◽  
Interface Roughness ◽  
Silicon On Insulator ◽  
Oxide Surface ◽  
Bulk Single Crystal ◽  
Oxide Interface ◽  
Crystal Silicon ◽  
Cross Sectional

AbstractInterfaces between two kind of substrate, a bulk silicon wafer and a laser-recrystallized Silicon-On-Insulator (SOI), and its thermally grown oxide have been studied. High resolution transmission electron microscopy (HRTEM) of cross sectional specimen shows that the roughness at the interface is atomically flat and nearly uniform for the bulk single crystal silicon and silicon oxide, while being nonuniform and rough as much as 20 nm height for the recrystallized silicon and silicon oxide interface. Consideration of interface between recrystallized silicon and silicon oxide, and the oxide surface above, the observed roughness at the interface is due to original grain boundaries of polycrystalline silicon which was used as the material for the laser recrystallized silicon formation. It is also discussed HRTEM of the interface between polycrystalline silicon and silicon oxide.

scholarly journals Electric dipole effect in PdCoO2/β-Ga2O3 Schottky diodes for high-temperature operation

2019 ◽  
Vol 5 (10) ◽  
pp. eaax5733 ◽  
Author(s):  
T. Harada ◽  
S. Ito ◽  
A. Tsukazaki
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Extreme Environments ◽  
Oxide Interface ◽  
Electric Dipoles ◽  
Bandgap Semiconductors ◽  
High Temperature Operation

High-temperature operation of semiconductor devices is widely demanded for switching/sensing purposes in automobiles, plants, and aerospace applications. As alternatives to conventional Si-based Schottky diodes usable only at 200°C or less, Schottky interfaces based on wide-bandgap semiconductors have been extensively studied to realize a large Schottky barrier height that makes high-temperature operation possible. Here, we report a unique crystalline Schottky interface composed of a wide-gap semiconductor β-Ga2O3 and a layered metal PdCoO2. At the thermally stable all-oxide interface, the polar layered structure of PdCoO2 generates electric dipoles, realizing a large Schottky barrier height of ~1.8 eV, well beyond the 0.7 eV expected from the basal Schottky-Mott relation. Because of the naturally formed homogeneous electric dipoles, this junction achieved current rectification with a large on/off ratio approaching 108 even at a high temperature of 350°C. The exceptional performance of the PdCoO2/β-Ga2O3 Schottky diodes makes power/sensing devices possible for extreme environments.

Energetics of AlN Epitaxial Wetting Layers on SiC (0001)

1996 ◽  
Vol 449 ◽  
Author(s):  
R. Di Felice ◽  
J. E. Northrup ◽  
J. Neugebauer
Keyword(s):  
First Principles ◽  
Three Dimensional ◽  
Layer Growth ◽  
Layer By Layer ◽  
Two Dimensional ◽  
Charge Accumulation ◽  
Wetting Layer ◽  
Interface Charge ◽  
Wetting Layers

ABSTRACTWe present a first-principles characterization of the initial stages of formation of AlN films on c-plane SiC substrates. Studying the competition between two-dimensional films and three-dimensional islands as a function of Al and N abundances, we find that a two-dimensional film can wet the surface in N-rich conditions. Ordered layer-by-layer growth can proceed to some extent on this wetting layer, and is improved by the formation of an atomically mixed interface which eliminates interface charge accumulation. Our results indicate that the stable AlN films grow in the (0001) orientation on the Si-terminated SiC(0001) substrate.

Failure of a Thermal Barrier System Due to a Cyclic Displacement Instability in the Thermally grown Oxide

2000 ◽  
Vol 645 ◽  
Author(s):  
Daniel R. Mumm ◽  
Anthony G. Evans
Keyword(s):  
Bond Coat ◽  
Large Scale ◽  
Thermal Exposure ◽  
Thermally Grown Oxide ◽  
Thermal Barrier ◽  
Oxide Interface ◽  
Barrier Coating ◽  
Out Of Plane ◽  
Plane Displacement ◽  
Thermally Grown

ABSTRACTThe mechanism controlling the cyclic failure of a commercial thermal barrier system has been investigated. The system comprises an electron-beam physical vapor deposited (EB-PVD) yttria-stabilized zirconia thermal barrier coating (TBC), deposited on a (Ni Pt) Al bond coating. The thermally grown oxide (TGO) layer that forms between the TBC and bond coat at high temperature is unstable with respect to out of plane displacement, provided initial perturbations are present. With cyclic thermal exposure, the TGO displaces into the bond coat at periodic interfacial sites. The out-of-plane displacements induce strains above the TGO, normal to the interface, that cause cracking. The cracks nucleate either within the TBC layer or at the TBC/TGO interface, and extend laterally until they coalesce with cracks from other sites and coating failure occurs by large scale buckling. The TGO displacements are accommodated by visco-plastic deformation of the underlying bond coat, and are driven by a lateral component of the growth strain in the TGO. The susceptibility of the TGO to out-of-plane displacement depends critically upon the initial morphology of the metal/oxide interface. The observed material responses are compared with predictions of a ‘ratcheting’ model.

HVDC Cable Accessory Insulation

2017 ◽  
pp. 160-193
Keyword(s):  
Dielectric Properties ◽  
Space Charge ◽  
High Power ◽  
Nanosized Particles ◽  
Charge Accumulation ◽  
Long Distance ◽  
Ethylene Propylene ◽  
Interface Charge ◽  
Direct Fluorination ◽  
Ethylene Propylene Diene Terpolymer

HVDC cables have shown great advantages for long-distance, high-power underground or underwater transmission. The performance of cable accessories, as an essential part of the HVDC networks, is a great concern to the reliability of the system. However, Cable accessories made of ethylene-propylene-diene terpolymer (EPDM), which are considered to be the weakest part of HVDC cable system, have to face the problem of space charge accumulation. Nanosized particles have been proved as an effective method to suppress the space charge accumulation in dielectric composites. This chapter presents a study aimed at clarifying the effect of nanoparticles and direct-fluorination on space charge behaviors for HVDC cable accessory insulation. Obtained results show that the dielectric properties and DC conduction for HVDC cable accessory insulation are significantly influenced and the interface charge density can be effectively suppressed by doped fillers.

Sign in / Sign up

Export Citation Format

Share Document