Comparative Analysis of Logic Gates Based on Spin Transfer Torque (STT) and Differential Spin Hall Effect (DSHE) Switching Mechanisms

2019 ◽  
pp. 428-441
Author(s):  
Piyush Tankwal ◽  
Vikas Nehra ◽  
Brajesh Kumar Kaushik
Keyword(s):  
Comparative Analysis ◽  
Hall Effect ◽  
Logic Gates ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Hall Effect

Performance analysis of differential spin hall effect (DSHE)-MRAM-based logic gates

Circuit World ◽  
2019 ◽  
Vol 45 (4) ◽  
pp. 300-310
Author(s):  
Piyush Tankwal ◽  
Vikas Nehra ◽  
Sanjay Prajapati ◽  
Brajesh Kumar Kaushik
Keyword(s):  
Hall Effect ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Complementary Metal Oxide Semiconductor ◽  
Logic Gates ◽  
Cmos Technology ◽  
Spin Transfer Torque ◽  
Spin Hall Effect ◽  
Oxide Semiconductor ◽  
Content Type

Purpose The purpose of this paper is to analyze and compare the characteristics of hybrid conventional complementary metal oxide semiconductor/magnetic tunnel junction (CMOS/MTJ) logic gates based on spin transfer torque (STT) and differential spin Hall effect (DSHE) magnetic random access memory (MRAM). Design/methodology/approach Spintronics technology can be used as an alternative to CMOS technology as it is having comparatively low power dissipation, non-volatility, high density and high endurance. MTJ is the basic spin based device that stores data in form of electron spin instead of charge. Two mechanisms, namely, STT and SHE, are used to switch the magnetization of MTJ. Findings It is observed that the power consumption in DSHE based logic gates is 95.6% less than the STT based gates. DSHE-based write circuit consumes only 5.28 fJ energy per bit. Originality/value This paper describes how the DSHE-MRAM is more effective for implementing logic circuits in comparison to STT-MRAM.

scholarly journals Spin‐Polarized Current, Spin‐Transfer Torque, and Spin Hall Effect in Presence of an Electromagnetic Non‐Minimal Coupling

2020 ◽  
Vol 532 (3) ◽  
pp. 1900357
Author(s):  
Rodrigo Turcati ◽  
Carlos Andres Bonilla Quintero ◽  
José Abdalla Helayël‐Neto ◽  
Enrique Arias
Keyword(s):  
Hall Effect ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Hall Effect ◽  
Minimal Coupling ◽  
Spin Polarized

scholarly journals Spin transfer torque devices utilizing the giant spin Hall effect of tungsten

2012 ◽  
Vol 101 (12) ◽  
pp. 122404 ◽  
Author(s):  
Chi-Feng Pai ◽  
Luqiao Liu ◽  
Y. Li ◽  
H. W. Tseng ◽  
D. C. Ralph ◽  
...  
Keyword(s):  
Hall Effect ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Hall Effect

Numerical Simulation of Spin Torque Induced by Spin Hall Effect in CuPt/Fe Heterostructure

2015 ◽  
Vol 233-234 ◽  
pp. 407-410 ◽  
Author(s):  
Timofey Andrianov ◽  
Yulia Gritsenko ◽  
Nikita Strelkov ◽  
Natalia Ryzhanova ◽  
Anatoly Vedyaev
Keyword(s):  
Numerical Simulation ◽  
Hall Effect ◽  
Angular Dependence ◽  
Spin Transport ◽  
Ferromagnetic Layer ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Hall Effect ◽  
Spin Torque ◽  
Spin Accumulation

Spin transport and distribution of spin accumulation in CuPt/Fe heterostructure are numerically investigated, using linearized Levy-Fert model. It was shown that Spin Hall Effect in CuPt layer produces non-equilibrium spin accumulation in adjacent ferromagnetic layer. Spin accumulation vector is not collinear with the direction of magnetization in ferromagnetic layer which leads to the appearance of spin transfer torque. The absolute values and angular dependence of this torque were calculated and it was demonstrated that for the current the values of torques are sufficient for manipulation of magnetization of ferromagnetic layer.

scholarly journals A Comparative Study Between Spin-Transfer-Torque and Spin-Hall-Effect Switching Mechanisms in PMTJ Using SPICE

2017 ◽  
Vol 3 ◽  
pp. 74-82 ◽  
Author(s):  
Ibrahim Ahmed ◽  
Zhengyang Zhao ◽  
Meghna G. Mankalale ◽  
SACHIN S. Sapatnekar ◽  
Jian-Ping Wang ◽  
...  
Keyword(s):  
Comparative Study ◽  
Hall Effect ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Hall Effect
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