Acceptor levels in indium selenide. An investigation by means of the Hall effect, deep-level-transient spectroscopy and photoluminescence

1987 ◽  
Vol 44 (3) ◽  
pp. 249-260 ◽  
Author(s):  
A. Segura ◽  
M. C. Mart�nez-Tom�s ◽  
B. Mar� ◽  
A. Casanovas ◽  
A. Chevy
Keyword(s):  
Hall Effect ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Indium Selenide ◽  
Transient Spectroscopy

Experimental Evidence for an Electrically Neutral (N-Si)-Complex Formed during the Annealing Process of Si+-/N+-Co-Implanted 4H-SiC

2005 ◽  
Vol 483-485 ◽  
pp. 641-644 ◽  
Author(s):  
Frank Schmid ◽  
Thomas Frank ◽  
Gerhard Pensl
Keyword(s):  
Hall Effect ◽  
Experimental Evidence ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Annealing Process ◽  
Present Knowledge ◽  
Defect Complex ◽  
Neutral Defect ◽  
Transient Spectroscopy ◽  
Defect Species

Hall effect investigations taken on Si+-/N+-, C+-/N+- or Ne+-/N+-co-implanted 4H-SiC layers and deep level transient spectroscopy investigations taken on Si+-implanted 4H-SiC layers provide experimental evidence for an electrically neutral defect complex formed during the annealing process at temperatures between 1400°C and 1700°C. This defect complex consumes nitrogen donors and an intrinsic Si containing defect species (interstitial Si or Si-antisite) or Cvacancies. At our present knowledge, we favor an (NX-SiY)-complex.

Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy

2017 ◽  
Vol 897 ◽  
pp. 111-114 ◽  
Author(s):  
Martin Hauck ◽  
Julietta Weisse ◽  
Johannes Lehmeyer ◽  
Gregor Pobegen ◽  
Heiko B. Weber ◽  
...  
Keyword(s):  
Hall Effect ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Drain Current ◽  
Charge Carrier Density ◽  
Interface Traps ◽  
Quantitative Investigation ◽  
Inversion Charge ◽  
Hall Effect Measurements ◽  
Transient Spectroscopy

Drain current DLTS (ID-DLTS) and Hall effect measurements were carried out on two types of 4H-SiC n-MOSFETs, one with a post oxidation annealing (POA) in NO and one in O2 atmosphere. Hall effect measurements show a reduction of Dit by POA in NO compared to POA in O2 and, as a consequence, a higher inversion charge carrier density, while the Hall mobility is only weakly affected by the introduction of nitrogen during POA. Based on ID-DLTS we provide a method for a quantitative and selective investigation of near interface traps (NITs) in the oxide. It is shown that POA in NO strongly reduces the density of NITs.

Deep level transient spectroscopy measurement on tin-doped n-indium selenide

1991 ◽  
Vol 52 (6) ◽  
pp. 373-379 ◽  
Author(s):  
B. Mar� ◽  
A. Segura ◽  
A. Casanovas ◽  
A. Chevy
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Indium Selenide ◽  
Spectroscopy Measurement ◽  
Transient Spectroscopy

Persistent Photoconductivity And Thermal Recovery Kinetics Of Low Energy Ar + Bombarded GaAs

1991 ◽  
Vol 223 ◽  
Author(s):  
A. Vaseashta ◽  
L. C. Burton
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Thermal Recovery ◽  
Low Energy ◽  
Persistent Photoconductivity ◽  
Transport Parameters ◽  
Excellent Correlation ◽  
Proposed Model ◽  
Transient Spectroscopy ◽  
Kinetics Of

ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Rate and transport equations for these processes were derived and simulated employing transport parameters, trap locations and densities determined by deep level transient spectroscopy. Excellent correlation was obtained between the results of preliminary simulation and the experimentally observed values. The exponential decay of persistent photoconductivity response curve was determined to be due to metastable electron traps with longer lifetime and is consistent with an earlier proposed model.

Deep level study in epitaxial 4H-SiC grown on substrates inclined toward

2002 ◽  
Vol 719 ◽  
Author(s):  
Masashi Kato ◽  
Masaya Ichimura ◽  
Eisuke Arai ◽  
Shigehiro Nishino
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Activation Energies ◽  
Thickness Dependence ◽  
Epitaxial Layers ◽  
Transient Spectroscopy

AbstractEpitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

Two-Dimensional Local Deep-Level Transient Spectroscopy Imaging Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy

2016 ◽  
Author(s):  
N. Chinone ◽  
Y. Cho ◽  
R. Kosugi ◽  
Y. Tanaka ◽  
S. Harada ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Higher Order ◽  
Trap Density ◽  
New Technique ◽  
Two Dimensional ◽  
Nonlinear Dielectric ◽  
Annealing Conditions ◽  
Transient Spectroscopy ◽  
A New Technique

Abstract A new technique for local deep level transient spectroscopy (DLTS) imaging using super-higher-order scanning nonlinear dielectric microscopy is proposed. Using this technique. SiCVSiC structure samples with different post oxidation annealing conditions were measured. We observed that the local DLTS signal decreases with post oxidation annealing (POA), which agrees with the well-known phenomena that POA reduces trap density. Furthermore, obtained local DLTS images had dark and bright areas, which is considered to show the trap distribution at/near SiCVSiC interface.

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