Relationship between antiphase boundaries and dislocations in ordered alloys

1970 ◽  
Vol 13 (3) ◽  
pp. 362-365
Author(s):  
L. I. Vasil'ev
Author(s):  
G. Vanderschaeve ◽  
A. Faress

Plastic deformation of L12 ordered alloys (Cu3Au type) occurs by slip of dislocation pairs. In alloys with periodic APB's however, dislocations moving through the crystal are continually crossing APB's and mechanical properties of these alloys are affected by conditions governing the propagation of dislocations through them.This paper describes some peculiarities of the interaction of moving dislocations with periodic APB's in a Cu 20.3at%Pd alloy, where the average distance between periodic APB's is Ma∼7.6a. The frequently observed configuration (Fig. 1) consisting of dislocation pairs followed by alternatively widely extended and unsplit unit dislocations can be understood if one analyzes the effective surface tension acting on each Shockley partial.


1986 ◽  
Vol 81 ◽  
Author(s):  
J.M. Sanchez ◽  
S. Eng ◽  
Y.P. Wu ◽  
J.K. Tien

AbstractThe thermodynamic properties of conservative (111) antiphase boundaries in L12 ordered structures are modeled using the tetrahedron approximation of the cluster variation method. The concentration and long-range order parameter profiles are determined as a function of temperature and composition of the bulk alloy. Characteristic wetting transitions, with a macroscopic disordered layer growing from the antiphase boundary as the transition temperature is approached, are found for all cases investigated. The effectof antiphase boundaries on the disordering of ordered alloys and on the gliding of superdislocations are discussed.


Author(s):  
P.P.K. Smith

Grains of pigeonite, a calcium-poor silicate mineral of the pyroxene group, from the Whin Sill dolerite have been ion-thinned and examined by TEM. The pigeonite is strongly zoned chemically from the composition Wo8En64FS28 in the core to Wo13En34FS53 at the rim. Two phase transformations have occurred during the cooling of this pigeonite:- exsolution of augite, a more calcic pyroxene, and inversion of the pigeonite from the high- temperature C face-centred form to the low-temperature primitive form, with the formation of antiphase boundaries (APB's). Different sequences of these exsolution and inversion reactions, together with different nucleation mechanisms of the augite, have created three distinct microstructures depending on the position in the grain.In the core of the grains small platelets of augite about 0.02μm thick have farmed parallel to the (001) plane (Fig. 1). These are thought to have exsolved by homogeneous nucleation. Subsequently the inversion of the pigeonite has led to the creation of APB's.


Author(s):  
Gerald B. Feldewerth

In recent years an increasing emphasis has been placed on the study of high temperature intermetallic compounds for possible aerospace applications. One group of interest is the B2 aiuminides. This group of intermetaliics has a very high melting temperature, good high temperature, and excellent specific strength. These qualities make it a candidate for applications such as turbine engines. The B2 aiuminides exist over a wide range of compositions and also have a large solubility for third element substitutional additions, which may allow alloying additions to overcome their major drawback, their brittle nature.One B2 aluminide currently being studied is cobalt aluminide. Optical microscopy of CoAl alloys produced at the University of Missouri-Rolla showed a dramatic decrease in the grain size which affects the yield strength and flow stress of long range ordered alloys, and a change in the grain shape with the addition of 0.5 % boron.


Author(s):  
N.-H. Cho ◽  
S. McKernan ◽  
C.B. Carter ◽  
K. Wagner

Interest has recently increased in the possibility of growing III-V compounds epitactically on non-polar substrates to produce device quality material. Antiphase boundaries (APBs) may then develop in the GaAs epilayer because it has sphalerite structure (face-centered cubic with a two-atom basis). This planar defect may then influence the electrical behavior of the GaAs epilayer. The orientation of APBs and their propagation into GaAs epilayers have been investigated experimentally using both flat-on and cross-section transmission electron microscope techniques. APBs parallel to (110) plane have been viewed at the atomic resolution and compared to simulated images.Antiphase boundaries were observed in GaAs epilayers grown on (001) Ge substrates. In the image shown in Fig.1, which was obtained from a flat-on sample, the (110) APB planes can be seen end-on; the faceted APB is visible because of the stacking fault-like fringes arising from a lattice translation at this interface.


Author(s):  
T. S. Kuan

Recent electron diffraction studies have found ordered phases in AlxGa1-xAs, GaAsxSb1-x, and InxGa1-xAs alloy systems, and these ordered phases are likely to be found in many other III-V ternary alloys as well. The presence of ordered phases in these alloys was detected in the diffraction patterns through the appearance of superstructure reflections between the Bragg peaks (Fig. 1). The ordered phase observed in the AlxGa1-xAs and InxGa1-xAs systems is of the CuAu-I type, whereas in GaAsxSb1-x this phase and a chalcopyrite type ordered phase can be present simultaneously. The degree of order in these alloys is strongly dependent on the growth conditions, and during the growth of these alloys, high surface mobility of the depositing species is essential for the onset of ordering. Thus, the growth on atomically flat (110) surfaces usually produces much stronger ordering than the growth on (100) surfaces. The degree of order is also affected by the presence of antiphase boundaries (APBs) in the ordered phase. As shown in Fig. 2(a), a perfectly ordered In0.5Ga0.5As structure grown along the <110> direction consists of alternating InAs and GaAs monolayers, but due to local growth fluctuations, two types of APBs can occur: one involves two consecutive InAs monolayers and the other involves two consecutive GaAs monolayers.


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