Effect of heat exchange at the hot junction of a thermoelectric element on the optimum current-carrier density distribution along its branches

1984 ◽  
Vol 47 (1) ◽  
pp. 841-845
Author(s):  
K. F. Ivanova ◽  
M. A. Kaganov ◽  
A. S. Rivkin
Keyword(s):  
Heat Exchange ◽  
Density Distribution ◽  
Carrier Density ◽  
Current Carrier ◽  
Thermoelectric Element

Carrier density distribution in silicon nanowires investigated by scanning thermal microscopy and Kelvin probe force microscopy

Micron ◽  
2015 ◽  
Vol 79 ◽  
pp. 93-100 ◽  
Author(s):  
Grzegorz Wielgoszewski ◽  
Piotr Pałetko ◽  
Daniel Tomaszewski ◽  
Michał Zaborowski ◽  
Grzegorz Jóźwiak ◽  
...  
Keyword(s):  
Density Distribution ◽  
Silicon Nanowires ◽  
Carrier Density ◽  
Kelvin Probe Force Microscopy ◽  
Scanning Thermal Microscopy ◽  
Kelvin Probe ◽  
Thermal Microscopy ◽  
Force Microscopy

Two-dimensional carrier density distribution inside a high power tapered laser diode

2011 ◽  
Vol 98 (22) ◽  
pp. 221110 ◽  
Author(s):  
R. Pagano ◽  
M. Ziegler ◽  
J. W. Tomm ◽  
I. Esquivias ◽  
J. M. G. Tijero ◽  
...  
Keyword(s):  
Density Distribution ◽  
Laser Diode ◽  
High Power ◽  
Carrier Density ◽  
Two Dimensional ◽  
Tapered Laser

Effects of magnetic field on the carrier density distribution of semiconductor power device operated in pulsed power conditions

2004 ◽  
Vol 147 (1) ◽  
pp. 10-16
Author(s):  
Yasuhiro Matsumoto ◽  
Takashi Aoki ◽  
Yukihiko Tamura ◽  
Shinji Ibuka ◽  
Koichi Yasuoka ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Density Distribution ◽  
Carrier Density ◽  
Pulsed Power ◽  
Power Device

scholarly journals Effects of Magnetic Field on the Carrier-Density Distribution of Semiconductor Power Device Operated in Pulsed Power Conditions

2003 ◽  
Vol 123 (2) ◽  
pp. 179-184 ◽  
Author(s):  
Yasuhiro Matsumoto ◽  
Takashi Aoki ◽  
Yukihiko Tamura ◽  
Shinji Ibuka ◽  
Koichi Yasuoka ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Density Distribution ◽  
Carrier Density ◽  
Pulsed Power ◽  
Power Device

Calcul analytique du transport des charges dans le a-Si :H

1995 ◽  
Vol 73 (9-10) ◽  
pp. 585-594 ◽  
Author(s):  
Wen Chao Chen ◽  
Louis-André Hamel
Keyword(s):  
Electric Field ◽  
Density Distribution ◽  
Analytical Solutions ◽  
Carrier Density ◽  
Free Carrier ◽  
Uniform Electric Field ◽  
Free Carrier Density ◽  
Arbitrary Position ◽  
Induced Charge ◽  
Special Case

Multitrapping transport of carriers through exponential band tails is studied for carriers generated at an arbitrary position in the device in presence of a linearly varying electric field, thus generalizing the usual treatment of time of flight experiments. An analytical expression is found for the free carrier density distribution n(x,t) for values of the dispersion parameter 0 < α < 1. In the case α = 1/2, analytical solutions are given for the transient current I(t) and the induced charge Q(t). Comparison with previous calculations is made for the special case of uniform electric field and carriers initially generated at one interface.

Carrier density distribution in modulation doped GaAs-AlxGa1−xAs quantum well heterostructures

1983 ◽  
Vol 26 (12) ◽  
pp. 1173-1176 ◽  
Author(s):  
T.C. Hsieh ◽  
K. Hess ◽  
J.J. Coleman ◽  
P.D. Dapkus
Keyword(s):  
Quantum Well ◽  
Density Distribution ◽  
Carrier Density

scholarly journals 4.5kV FRD Development for high current power modules

2018 ◽  
Vol 232 ◽  
pp. 04048
Author(s):  
Jiang Liu ◽  
Yueyang Liu ◽  
Rui Jin ◽  
Feng He ◽  
Shaohua Dong ◽  
...  
Keyword(s):  
Density Distribution ◽  
Carrier Density ◽  
Doping Concentration ◽  
High Reliability ◽  
Process Window ◽  
Trade Off ◽  
Power Modules ◽  
Dynamic Loss ◽  
Static Loss ◽  
Surge Current

A 4.5kV/100A FRD was designed by simulation, which had optimized carrier density distribute cell and ruggedness terminal. The cell was composed of P-body/N-sub/N+ layers, when the P-body doping concentration is lower, the carrier density distribution on the P-body/N-sub is lower; when carrier density di stribution on the P-body/N-sub side is lower than that on the N-sub/N+ side, the FRD has soft recovery but bad surge-current capability. So the P-body doping concentration needs trade-off consideration. Lifetime control technology was also used to optimize the carrier density distribution and trade-off characteristics. The terminal has high breakdown voltage, low electric field and large process window, which means more ruggedness and high reliability. The experiment results show that the design chip and competitor chip has nearly the same trade-off characteristics, the design chip has larger dynamic loss but lower static loss. The design chip has high surge current, the surge current is 13 times as much as the rate current.

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