Optimal electrical thickness of dielectric samples in resonator measurements

1988 ◽  
Vol 31 (8) ◽  
pp. 779-782
Author(s):  
E. B. Zal'tsman
Keyword(s):  
Electrical Thickness

ABSORPTION IN A DIELECTRIC SLAB

1958 ◽  
Vol 36 (4) ◽  
pp. 456-461 ◽  
Author(s):  
M. P. Bachynski
Keyword(s):  
Dielectric Constant ◽  
Incident Energy ◽  
High Dielectric Constant ◽  
Angle Of Incidence ◽  
Dielectric Slab ◽  
Absorbed Energy ◽  
Half Wavelength ◽  
High Dielectric Constant Materials ◽  
High Dielectric ◽  
Electrical Thickness

The amount of incident energy transmitted, reflected, and absorbed by a parallel slab of lossy, high-dielectric-constant material is derived. The results are general for any angle of incidence, and calculations are presented for some lossy, high-dielectric-constant materials of one-half wavelength electrical thickness. At angles of incidence greater than 60°, the reflected energy is found to be the smaller the lossier the material. The absorbed energy is a maximum at certain angles of incidence which depend upon the polarization and dielectric constant.

A Low Profile Asterick-Shaped Polarization Free Metamaterial-Inspired Absorber for Penta-Band Characteristics

2021 ◽  
Author(s):  
Raghvenda Kumar Singh ◽  
Ashish Gupta ◽  
Akash Yadav ◽  
Nishchay Gupta ◽  
Utkarsh Tyagi
Keyword(s):  
Radio Frequency Identification ◽  
Electromagnetic Compatibility ◽  
Absorption Mechanism ◽  
Stealth Technology ◽  
Low Profile ◽  
Symmetric Geometry ◽  
Frequency Identification ◽  
Polarization Insensitive ◽  
Independent Behavior ◽  
Electrical Thickness

Abstract A penta-band absorber is proposed and developed exhibiting ultra thin and polarization insensitive behavior. It has been designed to be operated in S, C and Ku bands with absorptions peaks at more than 95%. Proposed absorber is processed on a FR4 Glass Epoxy laminate with equivalent electrical thickness of 0.0108 λ0 where λ0 is the wavelength corresponding to the lowest frequency of operation. This confirms the ultra-thin nature of the structure. The absorption pattern of the proposed structure has been characterized under normal and oblique incidence followed by their experimental verification. Presented results demonstrate highly polarization-independent behavior of the proposed absorber due to its symmetric geometry. Also, the electromagnetic field distributions have been studied to acquire better insight of the absorption mechanism corresponding to distinct elements presented in the structure. Then the suggested structure is characterized in terms of its behavior as metamaterial, which ensures the miniaturization. The proposed absorber is suitable to be used in applications like radar cross section reduction, stealth technology, radio frequency identification and electromagnetic compatibility.

Study of Electrical Thickness Measurement System Technology of Composite

2013 ◽  
Vol 821-822 ◽  
pp. 1252-1255
Author(s):  
Xing Yu ◽  
Hao Gu ◽  
Hong Quan Feng ◽  
Bing Heng Wu ◽  
Yuan Yun Liu ◽  
...  
Keyword(s):  
Measurement System ◽  
Network Theory ◽  
Horn Antenna ◽  
Simulation Method ◽  
Thickness Measurement ◽  
System Technology ◽  
Antenna Aperture ◽  
Inner Surface ◽  
Electrical Thickness ◽  
Thickness Measurement System

Based on four-terminal network theory, a multilayered model for reflective electrical thickness measurement system is presented in this paper. Using the simulation method of finite element, two crucial parameters of the measurement system are given. One parameter is the distance between the inner surface of composite and reflective mold, the other is the outer surface of composite and horn antenna aperture. This work will guarantee the design of the electrical thickness measurement system of composite.

Anticipation of nitrided oxides electrical thickness based on XPS measurement

2004 ◽  
Vol 7 (4-6) ◽  
pp. 181-183 ◽  
Author(s):  
J. Bienacel ◽  
D. Barge ◽  
M. Bidaud ◽  
N. Emonet ◽  
D. Roy ◽  
...  
Keyword(s):  
Electrical Thickness

Quantum C-V modeling in depletion and inversion: accurate extraction of electrical thickness of gate oxide in deep submicron MOSFETs

2002 ◽  
Vol 49 (5) ◽  
pp. 889-894 ◽  
Author(s):  
Wuyun Quan ◽  
D.M. Kim ◽  
Hi-Deok Lee
Keyword(s):  
Gate Oxide ◽  
Deep Submicron ◽  
And Inversion ◽  
Electrical Thickness

Measurement of the physical and electrical thickness of ultrathin gate oxides

2002 ◽  
Vol 20 (5) ◽  
pp. 1836 ◽  
Author(s):  
H. S. Chang ◽  
H. D. Yang ◽  
H. Hwang ◽  
H. M. Cho ◽  
H. J. Lee ◽  
...  
Keyword(s):  
Gate Oxides ◽  
Electrical Thickness

Local Electrical Thickness-Mapping of Thin Oxides with Conducting Atomic Force Microscopy

2000 ◽  
Author(s):  
Alexander Olbrich ◽  
Bernd Ebersberger ◽  
Christian Boit
Keyword(s):  
Atomic Force Microscopy ◽  
Tunneling Current ◽  
Metal Electrode ◽  
Oxide Thickness ◽  
Oxide Surface ◽  
Mechanical Contact ◽  
Force Microscopy ◽  
Atomic Force ◽  
Electrical Thickness

Abstract In this work, we introduce Conducting Atomic Force Microscopy (C-AFM) as a novel technique for the determination of the local effective electrical oxide thickness with a lateral resolution of a few nanometers and a thickness resolution in the sub ångström range. In this technique the conductive tip of an AFM, which is in mechanical contact with the bare oxide surface, is used as metal electrode to define a local MOS structure with nanometer lateral extension. Oxide thickness determination is done by fitting the local I-V curves to the well known Fowler Nordheim tunneling equation with a thickness sensitivity in the sub-ångström range. In addition, tunneling current images at constant applied voltage can be obtained simultaneously to the oxide surface topography. We present a scheme which allows the conversion of the tunneling current images into maps of the local electrical oxide thickness. Several examples demonstrate the versatile and far-reaching application of C-AFM to R&D and failure analysis

Theory of inductive shielding

1968 ◽  
Vol 46 (16) ◽  
pp. 1745-1752 ◽  
Author(s):  
R. W. Latham ◽  
K. S. H. Lee
Keyword(s):  
Boundary Conditions ◽  
Mathematical Theory ◽  
Arbitrary Shape ◽  
Low Frequency ◽  
Electromagnetic Shielding ◽  
Thin Shells ◽  
Shielding Effectiveness ◽  
Mathematical Methods ◽  
Electrical Thickness

A mathematical theory of low-frequency electromagnetic shielding is constructed on the basis that an appropriate set of boundary conditions can be derived to duplicate the effect of the shield's wall on the fields within the shield. Shields with electrically thin shells are considered in detail; mathematical methods that are best suited for computational purposes are presented for calculating the shielding effectiveness of such a shield of arbitrary shape. Shells with arbitrary electrical thickness are also treated, but in less detail, since the shielding problem involving this kind of shell is shown to be different from but no more general than the shielding problem involving electrically thin shells. Explicit results are given for shields of particular shape.

Impact of physical and electrical thickness scaling on the reliability of plasma-nitrided gate dielectrics in a 90 nm SOI manufacturing technology

2005 ◽  
Vol 118 (1-3) ◽  
pp. 50-54 ◽  
Author(s):  
R. Geilenkeuser ◽  
K. Wieczorek ◽  
T. Mantei ◽  
F. Graetsch ◽  
L. Herrmann ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Manufacturing Technology ◽  
Electrical Thickness
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