Temperature resistance coefficient of composite resistive materials in the mixed-structure approximation

1985 ◽  
Vol 49 (3) ◽  
pp. 1105-1108 ◽  
Author(s):  
O. A. Vasilenko ◽  
A. A. Maier ◽  
V. A. Chashchin ◽  
E. N. Gulaeva ◽  
V. I. Bus'ko
Keyword(s):  
Resistance Coefficient ◽  
Mixed Structure ◽  
Temperature Resistance ◽  
Temperature Resistance Coefficient

scholarly journals Влияние частоты переменного электрического поля на температурные спектры импеданса керамического мультиферроика LuFe-=SUB=-2-=/SUB=-O-=SUB=-4-=/SUB=-

2018 ◽  
Vol 60 (6) ◽  
pp. 1062
Author(s):  
Р.А. Алиев ◽  
А.Г. Гамзатов ◽  
Г.М. Гаджиев ◽  
Н.С. Абакарова ◽  
А.Р. Кауль ◽  
...  
Keyword(s):  
Resistance Coefficient ◽  
Positive Temperature ◽  
Impedance Spectra ◽  
Sinusoidal Voltage ◽  
Temperature Resistance ◽  
Temperature Range ◽  
Temperature Resistance Coefficient ◽  
Barrier Model

AbstractTemperature impedance spectra are measured on LuFe_2O_4 ceramic multiferroics over a temperature range of 100–400 K, upon applying a sinusoidal voltage with a frequency varying between 20 Hz and 120MHz. At signal frequencies of 30–70 MHz, spectra exhibit features such as an abnormal positive temperature resistance coefficient within the temperature range of 200–260 K, which are interpreted in the context of the generalized barrier model.

NOISE MEASUREMENTS ON NbN THIN FILMS WITH A NEGATIVE TEMPERATURE RESISTANCE COEFFICIENT DEPOSITED ON SAPPHIRE AND ON SiO2

2007 ◽  
Vol 07 (01) ◽  
pp. L19-L30 ◽  
Author(s):  
G. LEROY ◽  
J. GEST ◽  
L. K. J. VANDAMME ◽  
O. BOURGEOIS
Keyword(s):  
Thin Films ◽  
Spectral Density ◽  
Sapphire Substrate ◽  
Negative Temperature ◽  
Resistance Coefficient ◽  
Impedance Analyzer ◽  
Temperature Resistance ◽  
Noise Measurements ◽  
Temperature Resistance Coefficient ◽  
Biased Samples

We characterize granular NbN x thin cermet films deposited on either sapphire substrate or on SiO 2 and compare the 1/f noise at 300 K and 80 K. The films were characterized with an impedance analyzer from 20 Hz to 1 MHz and analyzed as a resistor R in parallel with a capacitor C. The calculated noise voltage spectral density SvTh of the sample is in agreement with the experimentally observed noise for unbiased samples. The noise measurements on biased samples show 1/f noise. We checked that contact noise does not contribute to our measurements. The 1/f noise was compared for the films deposited on the silicon substrate and on the sapphire. Finally a model is proposed to explain the observed trends in the temperature resistance coefficient (TRC < 0 for all samples) and the relative 1/f noise at 300 K and 80 K with the composition x = N/Nb of the layers.

scholarly journals Modeling, Design, and Fabrication of Self-Doping Si1−xGex/Si Multiquantum Well Material for Infrared Sensing

2016 ◽  
Vol 2016 ◽  
pp. 1-7 ◽  
Author(s):  
Bo Jiang ◽  
Dandan Gu ◽  
Yulong Zhang ◽  
Yan Su ◽  
Yong He ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Chemical Vapor ◽  
Sige Layer ◽  
Resistance Coefficient ◽  
Low Noise ◽  
Reduced Pressure ◽  
Infrared Sensing ◽  
Pressure Chemical ◽  
Temperature Resistance Coefficient ◽  
Multiquantum Well

The paper presents the study of band distributions and thermoelectric properties of self-doping Si1−xGex/Si multiquantum well material for infrared detection. The simulations of different structures (including boron doping, germanium concentrations, and SiGe layer thickness) have been conducted. The critical thickness of SiGe layer grown on silicon substrate has also been illustrated in the paper. The self-doping Si1−xGex/Si multiquantum well material was epitaxially grown on SOI substrate with reduced pressure chemical vapor deposition. Each layer of the material is clear in the SEM. TheI-Vcharacterizations and temperature resistance coefficient (TCR) tests were also performed to show the thermoelectric properties. The TCR was about −3.7%/K at room temperature in the experiments, which is competitive with the other thermistor materials. The material is a low noise material, whose root mean square noise is 1.89 mV in the experiments.

scholarly journals Temperature resistance coefficient of doped with rare earth elements nanostructured silicon films

Doklady BGUIR ◽  
2021 ◽  
Vol 19 (7) ◽  
pp. 99-105
Author(s):  
A. S. Strogova
Keyword(s):  
Rare Earth ◽  
Rare Earth Elements ◽  
Temperature Coefficient ◽  
Silicon Film ◽  
Resistance Coefficient ◽  
Silicon Films ◽  
Temperature Coefficient Of Resistance ◽  
Nanostructured Silicon ◽  
Temperature Resistance Coefficient ◽  
Formation Conditions

The regularities of changes in the concentration of an electrically active dopant in a nanostructured silicon film by changing the electrical resistivity depending on the doping conditions were investigated. The dependences of the changes in the obtained structures doped with rare-earth elements, such as La, Eu, Sm, Dy, Gd (lanthanides), on nanostructured silicon films are determined. The regularities of the obtained films changes and the temperature coefficient of resistance (TCR) change depending on the formation conditions are established. The regularities of the TCR are shown depending on the selected conditions for doping or non-doping of nanostructured silicon films with various impurities. It is shown that the main conditions under which the effect and change in the temperature coefficient of resistors resistance on thin films using rare-earth elements, such as oxygen, boron and phosphorus in the bulk of the film, is considered to be the temperature effect after deposition.

Time Dependances of the Resistance Coefficients of Polymeric Materials

INEOS OPEN ◽  
2020 ◽  
Vol 3 ◽  
Author(s):  
A. V. Matseevich ◽  
◽  
A. A. Askadskii ◽  
Keyword(s):  
Time Dependence ◽  
Physical Mechanism ◽  
Polymeric Materials ◽  
Resistance Coefficient ◽  
Constant Stress ◽  
Time To Rupture ◽  
Structure Sensitive ◽  
Material Durability ◽  
Resistance Coefficients ◽  
Extremal Character

One of the possible approaches to the analysis of a physical mechanism of time dependence for the resistance coefficients of materials is suggested. The material durability at the constant stress is described using the Zhurkov and Gul' equations and the durability at the alternating stress—using the Bailey criterion. The low strains lead to structuring of a material that is reflected in a reduction of the structure-sensitive coefficient in these equations. This affords 20% increase in the durability. The dependence of the resistance coefficient assumes an extremal character; the maximum is observed at the time to rupture lg tr ≈ 2 (s).

Dielectrophoretic Assembly of Gold Nanoparticle Arrays Evaluated in Terms of Room-Temperature Resistance

2020 ◽  
Vol E103.C (2) ◽  
pp. 62-65
Author(s):  
Yoshinao MIZUGAKI ◽  
Makoto MORIBAYASHI ◽  
Tomoki YAGAI ◽  
Masataka MORIYA ◽  
Hiroshi SHIMADA ◽  
...  
Keyword(s):  
Gold Nanoparticle ◽  
Room Temperature ◽  
Nanoparticle Arrays ◽  
Temperature Resistance

TECHALLOY NICKEL 211

Alloy Digest ◽  
1977 ◽  
Vol 26 (8) ◽  
Keyword(s):  
Corrosion Resistance ◽  
Elevated Temperature ◽  
Physical Properties ◽  
Electron Emission ◽  
Heat Treating ◽  
Manganese Alloy ◽  
Temperature Resistance ◽  
Structural Parts ◽  
Nickel 200 ◽  
Nickel Manganese

Abstract TECHALLOY Nickel 211 is a nickel-manganese alloy with good elevated-temperature resistance to corrosion by sulfur compounds. When annealed, it is slightly stronger and harder than Techalloy Nickel 200 and is good for structural parts subjected to degassing temperatures. Nickel 211 has low electron emission and is used for such applications as electron tubes and sparkplug electrodes. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties. It also includes information on corrosion resistance as well as forming, heat treating, machining, joining, and surface treatment. Filing Code: Ni-248. Producer or source: Techalloy Company Inc..

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