On the nature of the electrical conductance of organic polyethynylpolyarene-base semiconductors

1969 ◽  
Vol 18 (4) ◽  
pp. 856-858
Author(s):  
V. G. Kostrovskii ◽  
E. D. Litman ◽  
T. G. Shishmakova ◽  
I. L. Kotlyarevskii ◽  
M. I. Bardamova
Keyword(s):  
Electrical Conductance

Specific electrical conductance

2005 ◽  
Keyword(s):  
Electrical Conductance

Electrical conductance for the detection of dental caries

2021 ◽  
Author(s):  
Richard Macey ◽  
Tanya Walsh ◽  
Philip Riley ◽  
Anne-Marie Glenny ◽  
Helen V Worthington ◽  
...  
Keyword(s):  
Dental Caries ◽  
Electrical Conductance

scholarly journals Behavior and properties of water in silicate melts under deep mantle conditions

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Bijaya B. Karki ◽  
Dipta B. Ghosh ◽  
Shun-ichiro Karato
Keyword(s):  
Electrical Conductivity ◽  
Molar Volume ◽  
Water Solution ◽  
Pure Water ◽  
Electrical Conductance ◽  
Water Structure ◽  
Bulk Water ◽  
Silicate Melts ◽  
Pressure Regime ◽  
Low Pressures

AbstractWater (H2O) as one of the most abundant fluids present in Earth plays crucial role in the generation and transport of magmas in the interior. Though hydrous silicate melts have been studied extensively, the experimental data are confined to relatively low pressures and the computational results are still rare. Moreover, these studies imply large differences in the way water influences the physical properties of silicate magmas, such as density and electrical conductivity. Here, we investigate the equation of state, speciation, and transport properties of water dissolved in Mg1−xFexSiO3 and Mg2(1−x)Fe2xSiO4 melts (for x = 0 and 0.25) as well as in its bulk (pure) fluid state over the entire mantle pressure regime at 2000–4000 K using first-principles molecular dynamics. The simulation results allow us to constrain the partial molar volume of the water component in melts along with the molar volume of pure water. The predicted volume of silicate melt + water solution is negative at low pressures and becomes almost zero above 15 GPa. Consequently, the hydrous component tends to lower the melt density to similar extent over much of the mantle pressure regime irrespective of composition. Our results also show that hydrogen diffuses fast in silicate melts and enhances the melt electrical conductivity in a way that differs from electrical conduction in the bulk water. The speciation of the water component varies considerably from the bulk water structure as well. Water is dissolved in melts mostly as hydroxyls at low pressure and as –O–H–O–, –O–H–O–H– and other extended species with increasing pressure. On the other hand, the pure water behaves as a molecular fluid below 15 GPa, gradually becoming a dissociated fluid with further compression. On the basis of modeled density and conductivity results, we suggest that partial melts containing a few percent of water may be gravitationally trapped both above and below the upper mantle-transition region. Moreover, such hydrous melts can give rise to detectable electrical conductance by means of electromagnetic sounding observations.

Electrical Conductance of the LiCl–KCl Eutectic Melt Containing Halides and Alkali Titanium Fluorides as Solutes

1958 ◽  
Vol 62 (12) ◽  
pp. 1479-1482 ◽  
Author(s):  
George J. Janz ◽  
C. T. Brown ◽  
H. J. Gardner ◽  
C. Solomons
Keyword(s):  
Electrical Conductance ◽  
Eutectic Melt

Cyclohexane oxidation: relationships of the process efficiency with electrical conductance, electronic and cyclic voltammetry spectra of the reaction mixture

2021 ◽  
Vol 132 (1) ◽  
pp. 123-137
Author(s):  
Alexander Pokutsa ◽  
Andriy Zaborovsky ◽  
Pawel Bloniarz ◽  
Tomasz Paczeŝniak ◽  
Dariya Maksym ◽  
...  
Keyword(s):  
Cyclic Voltammetry ◽  
Electrical Conductance ◽  
Cyclohexane Oxidation ◽  
Process Efficiency

Deposition and Crystallisation Behaviour of Amorphous Silicon Thin Films Obtained by Pyrolysis of Disilane Gas at Very Low Pressure

1994 ◽  
Vol 345 ◽  
Author(s):  
T. Kretz ◽  
D. Pribat ◽  
P. Legagneux ◽  
F. Plais ◽  
O. Huet ◽  
...  
Keyword(s):  
Activation Energy ◽  
Growth Rate ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Electrical Conductance ◽  
Chemical Vapor ◽  
Crystalline Fraction ◽  
Silicon Thin Films ◽  
Crystallisation Behaviour

AbstractHigh purity amorphous silicon layers were obtained by ultrahigh vacuum (millitorr range) chemical vapor deposition (UHVCVD) from disilane gas. The crystalline fraction of the films was monitored by in situ electrical conductance measurements performed during isothermal annealings. The experimental conductance curves were fitted with an analytical expression, from which the characteristic crystallisation time, tc, was extracted. Using the activation energy for the growth rate extracted from our previous work, we were able to determine the activation energy for the nucleation rate for the analysed-films. For the films including small crystallites we have obtained En ∼ 2.8 eV, compared to En ∼ 3.7 eV for the completely amorphous ones.

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