Dielectric properties of (Ba, Nb) doped TiO2 ceramics: Migration mechanism and roles of (Ba, Nb)

1988 ◽  
Vol 23 (11) ◽  
pp. 4157-4164 ◽  
Author(s):  
Jenn -Ming Wu ◽  
Chi -Jen Chen
Keyword(s):  
Dielectric Properties ◽  
Doped Tio2 ◽  
Migration Mechanism

Permittivity boosting in “yellow” (Nb + In) co-doped TiO2

2020 ◽  
Vol 8 (39) ◽  
pp. 13627-13631
Author(s):  
Hiroki Taniguchi ◽  
Daiki Sato ◽  
Akitoshi Nakano ◽  
Ichiro Terasaki
Keyword(s):  
Dielectric Properties ◽  
Doped Tio2 ◽  
Post Annealing ◽  
Co Doped

Unusual effects of post annealing on optical and dielectric properties of (Nb0.5In0.5)0.01Ti0.99O2 (NITO-1.0%) are reported in the present study.

Nonlinear electrical behavior and dielectric properties of (Ca, Ta)-doped TiO2 ceramics

2002 ◽  
Vol 335 (1-2) ◽  
pp. 210-215 ◽  
Author(s):  
W.Y Wang ◽  
D.F Zhang ◽  
T Xu ◽  
X.F Li ◽  
T Zhou ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Electrical Behavior ◽  
Doped Tio2

Effects of sintering temperature on microstructure and giant dielectric properties of (V + Ta) co–doped TiO2 ceramics

2017 ◽  
Vol 725 ◽  
pp. 310-317 ◽  
Author(s):  
Wattana Tuichai ◽  
Supamas Danwittayakul ◽  
Narong Chanlek ◽  
Prasit Thongbai
Keyword(s):  
Dielectric Properties ◽  
Sintering Temperature ◽  
Doped Tio2 ◽  
Giant Dielectric ◽  
Co Doped

Nonlinear current-voltage and giant dielectric properties of Al3+ and Ta5+ co-doped TiO2 ceramics

2019 ◽  
Vol 116 ◽  
pp. 137-142 ◽  
Author(s):  
Wattana Tuichai ◽  
Supamas Danwittayakul ◽  
Narong Chanlek ◽  
Prasit Thongbai
Keyword(s):  
Dielectric Properties ◽  
Doped Tio2 ◽  
Giant Dielectric ◽  
Current Voltage ◽  
Co Doped

Microstructure and Electrical Properties of Nd2O3-Doped TiO2-Ta2O5-Based Capacitor-Varistor Ceramics

2010 ◽  
Vol 160-162 ◽  
pp. 348-352 ◽  
Author(s):  
Tian Guo Wang ◽  
Qun Qin ◽  
Dong Jian Zhou
Keyword(s):  
Dielectric Properties ◽  
Electrical Properties ◽  
Crystal Lattice ◽  
Breakdown Voltage ◽  
Low Voltage ◽  
Electrical Characteristics ◽  
Electrical Behavior ◽  
Optimal Doping ◽  
Doped Tio2 ◽  
Electrical Permittivity

A low-voltage TiO2 capacitor-varistor ceramics doped with Ta2O5 and Nd2O3 was systematically researched. The effect of Nd2O3 on the microstructure, nonlinear electrical properties, and dielectric properties of TiO2-based ceramics was investigated. It was found that an optimal doping composition of 99.20 mol% TiO2-0.10 mol%Ta2O5-0.7 mol% Nd2O3 was obtained with low breakdown voltage of 8.5 v/mm, high nonlinear constant of 4.0, ultrahigh electrical permittivity of 1.07× 105 and low tanδ of 0.39. In view of these electrical characteristics, the ceramics of 99.20 mol% TiO2-0.10 mol%Ta2O5-0.7 mol% Nd2O3 is a viable candidate for capacitor-varistor functional devices. The theory of defects in the crystal lattice was introduced to explain the nonlinear electrical behavior of the Nd2O3-doped TiO2-based varistor ceramics.

ChemInform Abstract: Nonlinear Electrical Behavior and Dielectric Properties of (Ca, Ta)-doped TiO2 Ceramics.

ChemInform ◽  
2010 ◽  
Vol 33 (19) ◽  
pp. no-no
Author(s):  
W. Y. Wang ◽  
D. F. Zhang ◽  
T. Xu ◽  
X. F. Li ◽  
T. Zhou ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Electrical Behavior ◽  
Doped Tio2

Impact of Bimetal Electrodes on Dielectric Properties of TiO2 and Al-Doped TiO2 Films

2012 ◽  
Vol 4 (9) ◽  
pp. 4726-4730 ◽  
Author(s):  
Seong Keun Kim ◽  
Sora Han ◽  
Woojin Jeon ◽  
Jung Ho Yoon ◽  
Jeong Hwan Han ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Tio2 Films ◽  
Doped Tio2

scholarly journals High-Performance Giant Dielectric Properties of Cr3+/Ta5+ Co-Doped TiO2 Ceramics

ACS Omega ◽  
2021 ◽  
Vol 6 (3) ◽  
pp. 1901-1910
Author(s):  
Wattana Tuichai ◽  
Supamas Danwittayakul ◽  
Narong Chanlek ◽  
Masaki Takesada ◽  
Atip Pengpad ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
High Performance ◽  
Doped Tio2 ◽  
Giant Dielectric ◽  
Co Doped

scholarly journals Microstructural Evolution and High-Performance Giant Dielectric Properties of Lu3+/Nb5+ Co-Doped TiO2 Ceramics

Molecules ◽  
2021 ◽  
Vol 26 (22) ◽  
pp. 7041
Author(s):  
Noppakorn Thanamoon ◽  
Narong Chanlek ◽  
Pornjuk Srepusharawoot ◽  
Ekaphan Swatsitang ◽  
Prasit Thongbai
Keyword(s):  
Dielectric Properties ◽  
Grain Boundaries ◽  
Dopant Concentration ◽  
Dielectric Behavior ◽  
Second Phase ◽  
Doped Tio2 ◽  
Dielectric Relaxations ◽  
Giant Dielectric ◽  
Second Phase Particles ◽  
Co Doped

Giant dielectric (GD) oxides exhibiting extremely large dielectric permittivities (ε’ > 104) have been extensively studied because of their potential for use in passive electronic devices. However, the unacceptable loss tangents (tanδ) and temperature instability with respect to ε’ continue to be a significant hindrance to their development. In this study, a novel GD oxide, exhibiting an extremely large ε’ value of approximately 7.55 × 104 and an extremely low tanδ value of approximately 0.007 at 103 Hz, has been reported. These remarkable properties were attributed to the synthesis of a Lu3+/Nb5+ co-doped TiO2 (LuNTO) ceramic containing an appropriate co-dopant concentration. Furthermore, the variation in the ε’ values between the temperatures of −60 °C and 210 °C did not exceed ±15% of the reference value obtained at 25 °C. The effects of the grains, grain boundaries, and second phase particles on the dielectric properties were evaluated to determine the dielectric properties exhibited by LuNTO ceramics. A highly dense microstructure was obtained in the as-sintered ceramics. The existence of a LuNbTiO6 microwave-dielectric phase was confirmed when the co-dopant concentration was increased to 1%, thereby affecting the dielectric behavior of the LuNTO ceramics. The excellent dielectric properties exhibited by the LuNTO ceramics were attributed to their inhomogeneous microstructure. The microstructure was composed of semiconducting grains, consisting of Ti3+ ions formed by Nb5+ dopant ions, alongside ultra-high-resistance grain boundaries. The effects of the semiconducting grains, insulating grain boundaries (GBs), and secondary microwave phase particles on the dielectric relaxations are explained based on their interfacial polarizations. The results suggest that a significant enhancement of the GB properties is the key toward improvement of the GD properties, while the presence of second phase particles may not always be effective.

Structural and dielectric properties of Li2O-doped TiO2

2009 ◽  
Vol 60 (8) ◽  
pp. 848-857 ◽  
Author(s):  
J.A. Mergos ◽  
C.T. Dervos
Keyword(s):  
Dielectric Properties ◽  
Doped Tio2
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