Effect of the height of a melted layer on its thermal structure in growing single crystals by the stockbarger method with the use of the accelerated crucible rotation technique

2000 ◽  
Vol 41 (3) ◽  
pp. 498-503
Author(s):  
V. É. Distanov ◽  
A. G. Kirdyashkin
Keyword(s):  
Single Crystals ◽  
Thermal Structure ◽  
Melted Layer ◽  
Stockbarger Method ◽  
Rotation Technique ◽  
Crucible Rotation

Crystal growth of CuInSe2 by the Bridgman method

1989 ◽  
Vol 67 (4) ◽  
pp. 294-297 ◽  
Author(s):  
W. S. Weng ◽  
L. S. Yip ◽  
I. Shih ◽  
C. H. Champness
Keyword(s):  
Crystal Growth ◽  
Room Temperature ◽  
Amorphous Layer ◽  
Bridgman Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Vertical Bridgman ◽  
Hall Effect Measurements ◽  
Rotation Technique ◽  
Crucible Rotation

Single crystals of CuInSe2 have been fabricated by the vertical Bridgman method. A conventional Czochralski crystal-pulling system was adapted for this purpose. An accelerated crucible-rotation technique was employed for a better mixing of the melt during the growth. Void- and crack-free crystal grains with an area as large as 50 mm2 and a thickness of more than 5 mm could be selectively cut from the ingots. From room-temperature Hall-effect measurements, mobility values as large as 73 cm2 ∙ V−1 ∙ s−1 were obtained for the present samples. X-ray diffraction studies suggested that abrasive polishing might create an amorphous layer on the surface of the CuInSe2 crystals.

scholarly journals Characteristics of TlBr single crystals grown using the vertical Bridgman-Stockbarger method for semiconductor-based radiation detector applications

2016 ◽  
Vol 34 (2) ◽  
pp. 297-301 ◽  
Author(s):  
Dong Jin Kim ◽  
Joon-Ho Oh ◽  
Han Soo Kim ◽  
Young Soo Kim ◽  
Manhee Jeong ◽  
...  
Keyword(s):  
Single Crystals ◽  
High Performance ◽  
Radiation Detector ◽  
Radiation Detectors ◽  
Middle Part ◽  
High Quality ◽  
Single Crystalline ◽  
Crystalline Sample ◽  
Vertical Bridgman ◽  
Stockbarger Method

AbstractTlBr single crystals grown using the vertical Bridgman-Stockbarger method were characterized for semiconductor based radiation detector applications. It has been shown that the vertical Bridgman-Stockbarger method is effective to grow high-quality single crystalline ingots of TlBr. The TlBr single crystalline sample, which was located 6 cm from the tip of the ingot, exhibited lower impurity concentration, higher crystalline quality, high enough bandgap (>2.7 eV), and higher resistivity (2.5 × 1011 Ω·cm) which enables using the fabricated samples from the middle part of the TlBr ingot for fabricating high performance semiconductor radiation detectors.

Improvements in Thallium Bromoiodide Photodetectors for Scintillation Spectrometers

1993 ◽  
Vol 302 ◽  
Author(s):  
J.G. Zhang ◽  
L. Cirignano ◽  
K. Daley ◽  
M.R. Squillante
Keyword(s):  
High Performance ◽  
Carrier Mobility ◽  
High Dielectric Constant ◽  
Signal To Noise Ratio ◽  
Charge Carrier Mobility ◽  
Large Area ◽  
Semiconductor System ◽  
Rotation Technique ◽  
High Dielectric ◽  
Crucible Rotation

ABSTRACTThallium bromoiodide, a tuneable band gap semiconductor system, was investigated as a photodetector for scintillation spectrometers. Extensive zone refining of starting materials, based on numerical simulations, considerably enhanced the electrical resistivity to 1011 Ωcm. In addition, accelerated crucible rotation technique (ACRT) crystal growth and after-growth annealing have improved the charge carrier mobility-lifetime product. However, a relatively low signal-to-noise ratio due to a high dielectric constant and relatively low quantum efficiency continues to be an obstacle to achieving high performance, large area T1BrxI1−xphotodetectors.

scholarly journals Электрически активные состояния захвата и переноса заряда, обусловливающие медленную рекомбинацию в кристаллах бромида таллия при низких температурах

2018 ◽  
Vol 52 (2) ◽  
pp. 171
Author(s):  
В. Кажукаускас ◽  
Р. Гарбачаускас ◽  
С. Савицки
Keyword(s):  
Activation Energy ◽  
Electric Field ◽  
Single Crystals ◽  
Applied Electric Field ◽  
Thermal Activation ◽  
Thermal Quenching ◽  
Activation Energies ◽  
Trap States ◽  
Optical Generation ◽  
Stockbarger Method

AbstractTlBr single crystals grown by the Bridgman–Stockbarger method are studied. It is established that frozen-conductivity effects manifest themselves under interband excitation by light at temperatures below 200 K. Herewith, clearly pronounced superlinear dependences of the induced photoconductivity on the strength of the applied electric field manifest themselves. The results of studying thermally stimulated conductivity evidence that these phenomena can be associated with the filling of trap states with thermal activation energies of 0.08–0.12 eV. This state can be removed due to thermal quenching at temperatures of ≳180 K because of the emptying of energy states with an activation energy of 0.63–0.65 eV filled after optical generation.

Preparation of Single Crystals of the Nonstoicmometric Fluorite Phases M1-xRxF2+x (M = Ca, Sr, Ba; R = Rare Earth Elements) by the Bridgman-Stockbarger Method

1991 ◽  
pp. 65-79
Author(s):  
B. P. Sobolev ◽  
Z. I. Zhmurova ◽  
V. V. Karelin ◽  
E. A. Krivandina ◽  
P. P. Fedorov ◽  
...  
Keyword(s):  
Rare Earth ◽  
Rare Earth Elements ◽  
Single Crystals ◽  
Stockbarger Method

Stabilization of Melt Convection of Lithium Niobate Using Accelerated Crucible Rotation Technique

2003 ◽  
Vol 150 (5) ◽  
pp. J17 ◽  
Author(s):  
Koichi Kakimoto ◽  
Hiroyuki Konishi ◽  
Akimasa Tashiro ◽  
Yoshio Hashimoto ◽  
Hideo Ishii ◽  
...  
Keyword(s):  
Lithium Niobate ◽  
Rotation Technique ◽  
Melt Convection ◽  
Crucible Rotation

Unidirectional solidification of Al–Cu eutectic with the accelerated crucible rotation technique

1998 ◽  
Vol 194 (3-4) ◽  
pp. 398-405 ◽  
Author(s):  
D Ma ◽  
W.Q Jie ◽  
W Xu ◽  
Y Li ◽  
S Liu
Keyword(s):  
Unidirectional Solidification ◽  
Rotation Technique ◽  
Crucible Rotation
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