Improvements in Thallium Bromoiodide Photodetectors for Scintillation Spectrometers

1993 ◽  
Vol 302 ◽  
Author(s):  
J.G. Zhang ◽  
L. Cirignano ◽  
K. Daley ◽  
M.R. Squillante
Keyword(s):  
High Performance ◽  
Carrier Mobility ◽  
High Dielectric Constant ◽  
Signal To Noise Ratio ◽  
Charge Carrier Mobility ◽  
Large Area ◽  
Semiconductor System ◽  
Rotation Technique ◽  
High Dielectric ◽  
Crucible Rotation

ABSTRACTThallium bromoiodide, a tuneable band gap semiconductor system, was investigated as a photodetector for scintillation spectrometers. Extensive zone refining of starting materials, based on numerical simulations, considerably enhanced the electrical resistivity to 1011 Ωcm. In addition, accelerated crucible rotation technique (ACRT) crystal growth and after-growth annealing have improved the charge carrier mobility-lifetime product. However, a relatively low signal-to-noise ratio due to a high dielectric constant and relatively low quantum efficiency continues to be an obstacle to achieving high performance, large area T1BrxI1−xphotodetectors.

scholarly journals Orientation analysis of pentacene molecules in organic field-effect transistor devices using polarization-dependent Raman spectroscopy

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Bishwajeet Singh Bhardwaj ◽  
Takeshi Sugiyama ◽  
Naoko Namba ◽  
Takayuki Umakoshi ◽  
Takafumi Uemura ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Charge Carrier ◽  
Molecular Orientation ◽  
Field Effect ◽  
High Performance ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Charge Carrier Mobility ◽  
Orientation Distribution ◽  
High Resolution Technique

Abstract Pentacene, an organic molecule, is a promising material for high-performance field effect transistors due to its high charge carrier mobility in comparison to usual semiconductors. However, the charge carrier mobility is strongly dependent on the molecular orientation of pentacene in the active layer of the device, which is hard to investigate using standard techniques in a real device. Raman scattering, on the other hand, is a high-resolution technique that is sensitive to the molecular orientation. In this work, we investigated the orientation distribution of pentacene molecules in actual transistor devices by polarization-dependent Raman spectroscopy and correlated these results with the performance of the device. This study can be utilized to understand the distribution of molecular orientation of pentacene in various electronic devices and thus would help in further improving their performances.

High performance dielectric composites by latex compounding of graphene oxide-encapsulated carbon nanosphere hybrids with XNBR

2014 ◽  
Vol 2 (29) ◽  
pp. 11144-11154 ◽  
Author(s):  
Ming Tian ◽  
Qin Ma ◽  
Xiaolin Li ◽  
Liqun Zhang ◽  
Toshio Nishi ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Graphene Oxide ◽  
Elastic Modulus ◽  
High Performance ◽  
High Dielectric Constant ◽  
Low Cost ◽  
Low Dielectric ◽  
Low Elastic Modulus ◽  
High Dielectric ◽  
Latex Compounding

A novel dielectric composite with high dielectric constant (k), low dielectric loss, low elastic modulus and large actuated strain at a low electric field was prepared by a simple, low-cost and efficient method.

Achieving Ceramic-like RF Capacitor Requirements with Organic-based Materials

2010 ◽  
Vol 2010 (1) ◽  
pp. 000072-000075 ◽  
Author(s):  
Jin-Hyun Hwang ◽  
John Andresakis ◽  
Bob Carter ◽  
Yuji Kageyama ◽  
Fujio Kuwako
Keyword(s):  
Dielectric Constant ◽  
Form Factor ◽  
High Dielectric Constant ◽  
High Volume ◽  
Electrical Performance ◽  
Frequency Range ◽  
Large Area ◽  
Low Loss ◽  
Capacitance Variation ◽  
High Dielectric

New and novel organic-based composite materials for the use of embedded RF capacitors have been developed to address the important material issues by means of functional filler and resin chemistry. Combining different fillers with appropriate chemistries, the net composite can be made thermally stable while retaining the high dielectric constant and low loss. These composites attained dielectric constant of above 7 without compromising the quality factor in GHz frequency range. In addition, measurement of capacitance variation as a function of temperature (TCC) showed flatter TCC profile, resulting in TCC of ±30 ppm/°C over the temperature range −55°C to 125°C. It can be incorporated into organic chip package and, unlike ceramic-based LTCC they can utilize large area processing that is typical, and available in high volume manufacturing. This material is formulated for RF module designers to successfully implement embedded RF capacitors into their organic chip package designs and thus improve form factor, electrical performance and possibly reduce overall costs.

Progress in nitrile-based polymer electrolytes for high performance lithium batteries

2016 ◽  
Vol 4 (26) ◽  
pp. 10070-10083 ◽  
Author(s):  
Pu Hu ◽  
Jingchao Chai ◽  
Yulong Duan ◽  
Zhihong Liu ◽  
Guanglei Cui ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Solid State ◽  
High Voltage ◽  
Lithium Batteries ◽  
Polymer Electrolytes ◽  
High Performance ◽  
Recent Progress ◽  
High Dielectric Constant ◽  
Lithium Ions ◽  
High Dielectric

Nitrile-based polymer electrolytes have unique characteristics such as a high dielectric constant, high anodic oxidization potential and favorable interaction with lithium ions. Recent progress in nitrile-based polymer electrolytes has been reviewed in terms of their potential application in flexible, solid-state or high voltage lithium batteries in this paper.

Enhanced Charge Carrier Mobility in Two-Dimensional High Dielectric Molybdenum Oxide

2012 ◽  
Vol 25 (1) ◽  
pp. 109-114 ◽  
Author(s):  
Sivacarendran Balendhran ◽  
Junkai Deng ◽  
Jian Zhen Ou ◽  
Sumeet Walia ◽  
James Scott ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Molybdenum Oxide ◽  
Carrier Mobility ◽  
Charge Carrier Mobility ◽  
Two Dimensional ◽  
High Dielectric

HIGH MOBILITY CONJUGATED POLYMER SEMICONDUCTORS FOR ORGANIC THIN FILM TRANSISTORS

COSMOS ◽  
2009 ◽  
Vol 05 (01) ◽  
pp. 59-77
Author(s):  
YUNING LI ◽  
BENG S. ONG
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
High Mobility ◽  
Cost Effective ◽  
Charge Carrier Mobility ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Large Area ◽  
Polymer Semiconductors

Organic thin film transistors (OTFTs) are promising candidates as alternatives to silicon TFTs for applications where light weight, large area and flexibility are required. OTFTs have shown potential for cost effective fabrication using solution deposition techniques under mild conditions. However, two major issues must be addressed prior to the commercialization of OTFT-based electronics: (i) low charge mobilities and (ii) insufficient air stability. This article reviews recent progress in the design and development of thiophene-based polymer semiconductors as channel materials for OTFTs. To date, both high performance p-type and n-type thiophene-based polymers with benchmark charge carrier mobility of > 0.5 cm2 V-1 s-1 have been archived, which bring printed OTFTs one step closer to commercialization.

scholarly journals Solution-processed near-infrared Cu(In,Ga)(S,Se)2 photodetectors with enhanced chalcopyrite crystallization and bandgap grading structure via potassium incorporation

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Joo-Hyun Kim ◽  
Hyemi Han ◽  
Min Kyu Kim ◽  
Jongtae Ahn ◽  
Do Kyung Hwang ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Grain Growth ◽  
Carrier Mobility ◽  
Near Infrared ◽  
Low Cost ◽  
Charge Carrier Mobility ◽  
Infrared Region ◽  
Infrared Light ◽  
Large Area ◽  
Solution Processed

AbstractAlthough solution-processed Cu(In,Ga)(S,Se)2 (CIGS) absorber layers can potentially enable the low-cost and large-area production of highly stable electronic devices, they have rarely been applied in photodetector applications. In this work, we present a near-infrared photodetector functioning at 980 nm based on solution-processed CIGS with a potassium-induced bandgap grading structure and chalcopyrite grain growth. The incorporation of potassium in the CIGS film promotes Se uptake in the bulk of the film during the chalcogenization process, resulting in a bandgap grading structure with a wide space charge region that allows improved light absorption in the near-infrared region and charge carrier separation. Also, increasing the Se penetration in the potassium-incorporated CIGS film leads to the enhancement of chalcopyrite crystalline grain growth, increasing charge carrier mobility. Under the reverse bias condition, associated with hole tunneling from the ZnO interlayer, the increasing carrier mobility of potassium-incorporated CIGS photodetector improved photosensitivity and particularly external quantum efficiency more than 100% at low light intensity. The responsivity and detectivity of the potassium-incorporated CIGS photodetector reach 1.87 A W−1 and 6.45 $$\times$$ ×  1010 Jones, respectively, and the − 3 dB bandwidth of the device extends to 10.5 kHz under 980 nm near-infrared light.

Significant dependence of morphology and charge carrier mobility on substrate surface chemistry in high performance polythiophene semiconductor films

2007 ◽  
Vol 90 (6) ◽  
pp. 062117 ◽  
Author(s):  
R. Joseph Kline ◽  
Dean M. DeLongchamp ◽  
Daniel A. Fischer ◽  
Eric K. Lin ◽  
Martin Heeney ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Surface Chemistry ◽  
High Performance ◽  
Carrier Mobility ◽  
Substrate Surface ◽  
Charge Carrier Mobility ◽  
Semiconductor Films ◽  
Significant Dependence

XRD Characterization of the 6H-SiC Single Crystal Grown from Si-C-Ti Ternary Solution

2007 ◽  
Vol 556-557 ◽  
pp. 303-306 ◽  
Author(s):  
Nobuyoshi Yashiro ◽  
Kazuhiko Kusunoki ◽  
Kazuhito Kamei ◽  
Akihiro Yauchi
Keyword(s):  
Reciprocal Lattice ◽  
The Self ◽  
Ternary Solution ◽  
Large Area ◽  
Etch Pits ◽  
X Ray ◽  
Xrd Diffraction ◽  
Rotation Technique ◽  
Crucible Rotation

We carried out the characterization of the crystallinity of the solution growth self-standing silicon carbide (SiC) crystals, which were grown from Si-C-Ti ternary solution with Accelerated Crucible Rotation Technique (ACRT). The self-standing crystal exhibited homogeneous green color without cracks and inclusions. The crystallinity of the self-standing crystal was characterized by various precise XRD diffraction measurements, such as の-scan rocking curve measurement, X-ray topography and reciprocal lattice mapping. The Full Width at Half Maximum (FWHM) of the の-scan rocking curves was about 20 arcsec. The X-ray topography showed a large area with a homogeneous orientation. The reciprocal lattice mapping exhibited a sharp single peak indicating the excellent crystallinity. Finally we confirmed rather high crystallinity of the self-standing crystals by etch pits measurement using molten KOH etching.

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