Unidirectional solidification of Al–Cu eutectic with the accelerated crucible rotation technique

1998 ◽  
Vol 194 (3-4) ◽  
pp. 398-405 ◽  
Author(s):  
D Ma ◽  
W.Q Jie ◽  
W Xu ◽  
Y Li ◽  
S Liu
Keyword(s):  
Unidirectional Solidification ◽  
Rotation Technique ◽  
Crucible Rotation

Crystal growth of CuInSe2 by the Bridgman method

1989 ◽  
Vol 67 (4) ◽  
pp. 294-297 ◽  
Author(s):  
W. S. Weng ◽  
L. S. Yip ◽  
I. Shih ◽  
C. H. Champness
Keyword(s):  
Crystal Growth ◽  
Room Temperature ◽  
Amorphous Layer ◽  
Bridgman Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Vertical Bridgman ◽  
Hall Effect Measurements ◽  
Rotation Technique ◽  
Crucible Rotation

Single crystals of CuInSe2 have been fabricated by the vertical Bridgman method. A conventional Czochralski crystal-pulling system was adapted for this purpose. An accelerated crucible-rotation technique was employed for a better mixing of the melt during the growth. Void- and crack-free crystal grains with an area as large as 50 mm2 and a thickness of more than 5 mm could be selectively cut from the ingots. From room-temperature Hall-effect measurements, mobility values as large as 73 cm2 ∙ V−1 ∙ s−1 were obtained for the present samples. X-ray diffraction studies suggested that abrasive polishing might create an amorphous layer on the surface of the CuInSe2 crystals.

Improvements in Thallium Bromoiodide Photodetectors for Scintillation Spectrometers

1993 ◽  
Vol 302 ◽  
Author(s):  
J.G. Zhang ◽  
L. Cirignano ◽  
K. Daley ◽  
M.R. Squillante
Keyword(s):  
High Performance ◽  
Carrier Mobility ◽  
High Dielectric Constant ◽  
Signal To Noise Ratio ◽  
Charge Carrier Mobility ◽  
Large Area ◽  
Semiconductor System ◽  
Rotation Technique ◽  
High Dielectric ◽  
Crucible Rotation

ABSTRACTThallium bromoiodide, a tuneable band gap semiconductor system, was investigated as a photodetector for scintillation spectrometers. Extensive zone refining of starting materials, based on numerical simulations, considerably enhanced the electrical resistivity to 1011 Ωcm. In addition, accelerated crucible rotation technique (ACRT) crystal growth and after-growth annealing have improved the charge carrier mobility-lifetime product. However, a relatively low signal-to-noise ratio due to a high dielectric constant and relatively low quantum efficiency continues to be an obstacle to achieving high performance, large area T1BrxI1−xphotodetectors.

Stabilization of Melt Convection of Lithium Niobate Using Accelerated Crucible Rotation Technique

2003 ◽  
Vol 150 (5) ◽  
pp. J17 ◽  
Author(s):  
Koichi Kakimoto ◽  
Hiroyuki Konishi ◽  
Akimasa Tashiro ◽  
Yoshio Hashimoto ◽  
Hideo Ishii ◽  
...  
Keyword(s):  
Lithium Niobate ◽  
Rotation Technique ◽  
Melt Convection ◽  
Crucible Rotation

scholarly journals Growth of Single-Crystal Cd0.9Zn0.1Te Ingots Using Pressure Controlled Bridgman Method

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 261
Author(s):  
Fan Yang ◽  
Wanqi Jie ◽  
Miao Wang ◽  
Xiaolong Sun ◽  
Ningbo Jia ◽  
...  
Keyword(s):  
Single Crystal ◽  
Gamma Ray ◽  
Bridgman Method ◽  
Rocking Curve ◽  
High Uniformity ◽  
Te Inclusions ◽  
Mean Size ◽  
Rotation Technique ◽  
Crucible Rotation ◽  
Pressure Controlled

We report growth of single-crystal Cd0.9Zn0.1Te ingots while using the pressure-controlled Bridgman method. The Cd pressure was controlled during growth to suppress its evaporation from the melt and reduce the size of Te inclusions in the as-grown crystals. The accelerated crucible rotation technique (ACRT) was used to suppress constitutional supercooling. The fast accelerating and slow decelerating rotation speeds were optimized. Two-inch Cd0.9Zn0.1Te single-crystal ingots without grain boundaries or twins were grown reproducibly. Glow discharge mass spectrometry results indicate the effective segregation coefficients of Zn and In dopants are 1.24 and 0.18, respectively. The full width half maximum (FWHM) of X-ray rocking curve was approximately 22.5 ″, and the IR transmittance was approximately 61%, indicating high crystallinity. The mean size of the Te inclusions was approximately 13.4 μm. Single-crystal wafers were cut into 5 × 5 × 2 mm3 slices and then used to fabricate gamma ray detectors. The energy resolution and peak-to-valley ratio maps were constructed while using 59.5 keV gamma ray measurements, which proved the high uniformity of detection performance.

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