ChemInform Abstract: LOW PRESSURE CHEMICAL VAPOR DEPOSITION OF TUNGSTEN ON POLYCRYSTALLINE AND SINGLE-CRYSTAL SILICON VIA THE SILICON REDUCTION

1985 ◽  
Vol 16 (12) ◽  
Author(s):  
K. Y. TSAO ◽  
H. H. BUSTA
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Crystal Silicon ◽  
Pressure Chemical

Cu hill and graphene grain evolution in the synthesis of millimeter-sized single crystal graphene during low pressure chemical vapor deposition

RSC Advances ◽  
2014 ◽  
Vol 4 (62) ◽  
pp. 32941-32945 ◽  
Author(s):  
Shuya Zhu ◽  
Quanfu Li ◽  
Qian Chen ◽  
Weihua Liu ◽  
Xin Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical

The evolution of Cu hills beneath graphene grains during the growth of millimeter scale single crystal graphene using low pressure chemical vapor deposition (LPCVD) was investigated.

Chemical Vapor Deposition of Silicon Carbide Using a Novel Organometallic Precursor

1988 ◽  
Vol 131 ◽  
Author(s):  
Wei Lee ◽  
Leonard V. Interrante ◽  
Corrina Czekaj ◽  
John Hudson ◽  
Klaus Lenz ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Fused Silica ◽  
Crystal Silicon ◽  
Organometallic Precursor ◽  
Pressure Chemical ◽  
By Products

ABSTRACTDense silicon carbide films have been prepared by low pressure chemical vapor deposition (LPCVD) using a volatile, heterocyclic, carbosilane precursor, MeHSiCH2SiCH2Me(CH2SiMeH2). At deposition temperatures between 700 and 800° C, polycrystalline, stoichiometric SiC films have been deposited on single crystal silicon and fused silica substrates. Optical microscopy and SEM analyses indicated formation of a transparent yellow film with a uniform, featureless surface and good adherence to the Si(lll) substrate. The results of preliminary studies of the nature of the gaseous by-products of the CVD processes and ultrahigh vacuum physisorption and decomposition of the precursor on Si(100) substrates are discussed.

scholarly journals Piezo-Hall effect in single crystal p-type 3C–SiC(100) thin film grown by low pressure chemical vapor deposition

RSC Advances ◽  
2016 ◽  
Vol 6 (37) ◽  
pp. 31191-31195 ◽  
Author(s):  
Afzaal Qamar ◽  
H.-P. Phan ◽  
Toan Dinh ◽  
Li Wang ◽  
Sima Dimitrijev ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Hall Effect ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
First Results ◽  
Pressure Chemical ◽  
P Type

This article reports the first results on piezo-Hall effect in single crystal p-type 3C–SiC(100) Hall devices.

Millimeter-Size Single-Crystal Graphene by Suppressing Evaporative Loss of Cu During Low Pressure Chemical Vapor Deposition

2013 ◽  
Vol 25 (14) ◽  
pp. 2062-2065 ◽  
Author(s):  
Shanshan Chen ◽  
Hengxing Ji ◽  
Harry Chou ◽  
Qiongyu Li ◽  
Hongyang Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical ◽  
Evaporative Loss

Role of limited hydrogen and flow interval on the growth of single crystal to continuous graphene by low-pressure chemical vapor deposition

2017 ◽  
Vol 28 (7) ◽  
pp. 075602 ◽  
Author(s):  
Munu Borah ◽  
Abhishek K Pathak ◽  
Dilip K Singh ◽  
Prabir Pal ◽  
Sanjay R Dhakate
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical
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