Plasma enhanced chemical vapor deposition of SiO2 films at low temperatures using SiCl4 and O2

1990 ◽  
Vol 19 (12) ◽  
pp. 1411-1415 ◽  
Author(s):  
A. Ortiz ◽  
S. Lopez ◽  
C. Falcony ◽  
M. Farias ◽  
L. Cota-Araiza ◽  
...  
Vacuum ◽  
2004 ◽  
Vol 76 (1) ◽  
pp. 19-22 ◽  
Author(s):  
Haruhisa Kinoshita ◽  
Toichi Murakami ◽  
Fumihiko Fukushima

2007 ◽  
Vol 51 (5) ◽  
pp. 1743-1747 ◽  
Author(s):  
J. Y. Huh ◽  
W. K. Seong ◽  
T. G. Lee ◽  
W. N. Kang ◽  
N. K. Yang ◽  
...  

2000 ◽  
Vol 611 ◽  
Author(s):  
Akira Izumi ◽  
Hidekazu Sato ◽  
Hideki Matsumura

ABSTRACTThis paper reports a procedure for low-temperature nitridation of silicon dioxide (SiO2) surfaces using species produced by catalytic decomposition of NH3 on heated tungsten in catalytic chemical vapor deposition (Cat-CVD) system. The surface of SiO2/Si(100) was nitrided at temperatures as low as 200°C. X-ray photoelectron spectroscopy measurements revealed that incorporated N atoms are bound to Si atoms and O atoms and located top-surface of SiO2.


2016 ◽  
Vol 444 ◽  
pp. 21-27 ◽  
Author(s):  
Ramsey Hazbun ◽  
John Hart ◽  
Ryan Hickey ◽  
Ayana Ghosh ◽  
Nalin Fernando ◽  
...  

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