AbstractD.C. magnetron sputtering from a CVD β-SiC target has been utilized to deposit amorphous SiC thin films on various substrates (Coming 7059 glass, unoxidized Si (111), and sapphire). The approximately 1 μm thick films were grown under various Ar sputtering pressures and flow rates. In situ annealing during deposition in vacuum and ex situ post-deposition annealing in air, both at 500°C for two hours, were implemented to determine their effects on the properties of the films. The mechanical properties were assessed via nanoindentation. An accelerated sphere-on-flat(tape) wear tester was administered to measure the wear volume losses and resultant wear rates under 0.1 and 0.2N loads, a 0.024m/s tape speed, and a 1mm ruby sphere diameter. An atomic force microscope (AFM) established the wear scar volume losses as well as the surface arithmetic roughness (RA) and root mean square roughness (RMS) of the films. The amorphous microstructure was verified by X-ray diffractometry. There was a decreasing trend in the plastic contact damage resistance, hardness, elastic modulus, and wear resistance of the films with increased amounts of Ar gas pressure; on the other hand, annealing of the lower Ar content films generated an increase in these properties compared to the as-deposited films. Atomic force microscopy revealed a more pronounced change in surface features and roughness for the in situ annealed films.
Ex-situ and in-situ selenization of copper-indium and copper-boron thin films