Fabrication of poly-Si thin film on glass substrate by aluminum-induced crystallization

2006 ◽  
Vol 21 (2) ◽  
pp. 33-35 ◽  
Author(s):  
Xu Man ◽  
Xia Donglin ◽  
Yang Sheng ◽  
Zhao Xiujian
Author(s):  
Shota Masuda ◽  
Kazuhiro Gotoh ◽  
Isao Takahashi ◽  
Kyotaro Nakamura ◽  
Yoshio Ohshita ◽  
...  

2006 ◽  
Vol 910 ◽  
Author(s):  
Dries Van Gestel ◽  
Ivan Gordon ◽  
Lode Carnel ◽  
Linda R. Pinckney ◽  
Alexandre Mayolet ◽  
...  

AbstractEfficient thin-film polycrystalline-silicon (pc-Si) solar cells on foreign substrates could lower the price of photovoltaic electricity. Aluminum-induced crystallization (AIC) of amorphous silicon followed by epitaxial thickening at high temperatures seems a good way to obtain efficient pc-Si solar cells. Due to its transparency and low cost, glass is well suited as substrate for pc-Si cells. However, most glass substrates do not withstand temperatures around 1000°C that are needed for high-temperature epitaxial growth. In this paper we investigate the use of experimental transparent glass-ceramics with high strain-point temperatures as substrates for pc-Si solar cells. AIC seed layers made on these substrates showed in-plane grain sizes up to 16 μm. Columnar growth was observed on these seed layers during high-temperature epitaxy. First pc-Si solar cells made on glass-ceramic substrates in substrate configuration showed efficiencies up to 4.5%, fill factors up to 75% and open-circuit voltage (Voc) values up to 536 mV. This is the highest Voc reported for pc-Si solar cells on glass and the best cell efficiency reported for cells made by AIC on glass.


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