Mathematical modeling of electrodeposition of permalloy thin film I. direct current plating

1999 ◽  
Vol 5 (5) ◽  
pp. 451-457 ◽  
Author(s):  
S.-K Doo ◽  
H.-J Sohn ◽  
T. Kang
Keyword(s):  
Mathematical Modeling ◽  
Thin Film ◽  
Direct Current

ZrCuAlNi thin film metallic glass grown by high power impulse and direct current magnetron sputtering

2021 ◽  
pp. 127029
Author(s):  
Niklas Bönninghoff ◽  
Wahyu Diyatmika ◽  
Jinn P. Chu ◽  
Stanislav Mráz ◽  
Jochen M. Schneider ◽  
...  
Keyword(s):  
Thin Film ◽  
Metallic Glass ◽  
Magnetron Sputtering ◽  
Direct Current ◽  
High Power ◽  
Direct Current Magnetron Sputtering

Thin‐film YBa2Cu3O7−x direct current SQUIDs with Josephson junctions made by direct electron beam writing

1996 ◽  
Vol 69 (17) ◽  
pp. 2590-2592
Author(s):  
B. Nadgorny ◽  
S. Shokhor ◽  
M. Gurvitch ◽  
S. Y. Hou ◽  
Julia M. Phillips
Keyword(s):  
Thin Film ◽  
Electron Beam ◽  
Direct Current ◽  
Josephson Junctions

Annealing Time Influence on Optical Characteristic of Beta-FeSi2 Thin Film

2015 ◽  
Vol 1096 ◽  
pp. 62-68
Author(s):  
Xi Cheng Xiong ◽  
Shuang Shuang Kang ◽  
Qian Chen ◽  
Jin Huang ◽  
Quan Xie ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Magnetron Sputtering ◽  
Direct Current ◽  
Annealing Time ◽  
Optical Characteristic ◽  
Annealing Temperature ◽  
Si Substrate ◽  
Direct Current Magnetron Sputtering ◽  
Digital Microscope

In this paper, we have prepared the beta-FeSi2 thin film on Si substrate through the direct current magnetron sputtering technology. We have tested the samples by XRD, optical digital microscope (ODM), spectrophotometer, and SEM. Under the same annealing temperature at 1153 K, the annealing time has important influence on the optical characteristic of beta-FeSi2 thin film. More the thickness of the beta-FeSi2 thin film is thinner, and more the absorptivity of photo is higher. We should use the thinner beta-FeSi2 thin film with appropriate value of the thickness and must adopt the anti-reflection layer to fabricate the solar cell.

Study on the ALN Thin Film for Improving the Performance of Heat Dissipation on High Power LED Substrate

2013 ◽  
Vol 834-836 ◽  
pp. 613-616 ◽  
Author(s):  
Yang Li ◽  
Chen Kui ◽  
Hui Ren Peng ◽  
Ming Jia Zhu ◽  
Ya Wen Pan ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Direct Current ◽  
High Power ◽  
Heat Dissipation ◽  
Aluminum Substrate ◽  
Back Side ◽  
Dc Magnetron Sputtering ◽  
High Power Led ◽  
Thermally Conductive

This dissertation employs the method of direct current (DC) magnetron sputtering on the reverse side of the high power LED aluminum substrate to deposit the AlN thin film. And then, we paste the high power LED beads to the front of the substrate, testing and studying the heat dissipation influences of the AlN thin film on the high-power LED beads. In order to compare easily, some parts of the reverse of aluminum substrate should be overlaid thermally conductive silicone. The result indicates that depositing the AIN thin film or the overlay thermally conductive silicone on the back side of the aluminum substrate can improve the heat dissipation capability of high power LED, the AIN thin film especially.

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