In this paper, a hybrid solution method is implemented for solving the semiconductor transport
equations. The hybrid “local Newton” method consists of a combination of the fixedpoint
iteration (FPI) and Newton’s methods. The FPI technique is nearly ideally suited to
solving large, 3-D systems of semiconductor equations on machines of limited computer
memory ; however, it has certain limitations. This motivates the local Newton method, which
coordinates the use of both the FPI and Newton’s methods, for convergence faster than either
method alone.
The presented simulated data compares concentration gradients and electric fields with experimental and numerical data of others. This data is simulated for cases involving liquid junctions and electrolytic transport. The objective of presenting this data is to support a model and theory. This theory demonstrates the incompatibility between conventional electrostatics inherent in Maxwell's equations with conventional transport equations. <br>
An appraisal of the existing sediment transport equations was made using May et al (1989) and Ackers (1991) sediment transport equations for the limit of deposition design criterion and with a deposit depth of 1% of the pipe diameter allowed in the sewers. The applicability of those equations for sewers with larger fixed bed deposit depth was assessed, the equations generally over-estimated the transport velocity. Modifications were made to enable the equations to apply to sewers with large fixed bed deposits present.
3-D Device Simulation Using Intelligent
Solution Method Control
