scholarly journals High-Resolution X-Ray Scattering from Thin Films and Multilayers

1998 ◽  
Vol 10 (4) ◽  
pp. 717-730 ◽  
Author(s):  
A Nefedov ◽  
A Abromeit ◽  
Ch Morawe ◽  
A Stierle

1993 ◽  
Vol 48 (19) ◽  
pp. 14463-14471 ◽  
Author(s):  
A. Gibaud ◽  
R. A. Cowley ◽  
D. F. McMorrow ◽  
R. C. C. Ward ◽  
M. R. Wells

1989 ◽  
Vol 160 ◽  
Author(s):  
L. J. Martinez-Miranda ◽  
M. P. Siegal ◽  
P. A. Heiney ◽  
J. J. Santiago-Aviles ◽  
W. R. Graham

AbstractWe have used high resolution grazing incidence x-ray scattering (GIXS) to study the in-plane and out-of-plane structure of epitaxial YSi2-x films grown on Si (111), with thicknesses ranging from 85Å to 510Å. Our results indicate that the films are strained, and that film strain increases as a function of thickness, with lattice parameters varying from a = 3.846Å/c = 4.142Å for the 85Å film to a = 3.877Å/c = 4.121Å for the 510Å film. We correlate these results with an increase in pinhole areal coverage as a function of thickness. In addition, our measurements show no evidence for the existence of ordered silicon vacancies in the films.


2020 ◽  
Vol 32 (37) ◽  
pp. 374006
Author(s):  
A R Wildes ◽  
R C C Ward ◽  
M R Wells ◽  
J P Hill ◽  
R A Cowley

2007 ◽  
Vol 42 (12) ◽  
pp. 4581-4590 ◽  
Author(s):  
P. Lenormand ◽  
A. Lecomte ◽  
C. Laberty-Robert ◽  
F. Ansart ◽  
A. Boulle

1999 ◽  
Vol 14 (7) ◽  
pp. 2905-2911 ◽  
Author(s):  
Sangsub Kim ◽  
Tae Soo Kang ◽  
Jung Ho Je

Epitaxial (Ba0.5Sr0.5) TiO3 thin films of two different thickness (∼25 and ∼134 nm) on MgO(001) prepared by a pulsed laser deposition method were studied by synchrotron x-ray scattering measurements. The film grew initially with a cube-on-cube relationship, maintaining it during further growth. As the film grew, the surface of the film became significantly rougher, but the interface between the film and the substrate did not. In the early stage of growth, the film was highly strained in a tetragonal structure (c/a = 1.04) with the longer axis parallel to the surface normal direction. As the growth proceeded further, it relaxed to a cubic structure with the lattice parameter near the bulk value, and the mosaic distribution improved significantly in both in- and out-of-plane directions. The thinner film (∼25 nm) showed only one domain limited mainly by the film thickness, but the thicker film (∼134 nm) exhibited three domains along the surface normal direction.


2001 ◽  
Vol 714 ◽  
Author(s):  
Kazuhiko Omote ◽  
Shigeru Kawamura

ABSTRACTWe have successively developed a new x-ray scattering technique for a non-destructive determination of pore-size distributions in porous low-κ thin films formed on thick substrates. The pore size distribution in a film is derived from x-ray diffuse scattering data, which are measured using offset θ/2θ scans to avoid strong specular reflections from the film surface and its substrate. Γ-distribution mode for the pores in the film is used in the calculation. The average diameter and the dispersion parameter of the Γ-distribution function are varied and refined by computer so that the calculated scattering pattern best matches to the experimental pattern. The technique has been used to analyze porous methyl silsesquioxane (MSQ) films. The pore size distributions determined by the x-ray scattering technique agree with that of the commonly used gas adsorption technique. The x-ray technique has been also used successfully determine small pores less than one nanometer in diameter, which is well below the lowest limit of the gas adsorption technique.


2021 ◽  
Vol 54 (3) ◽  
Author(s):  
Peter Nadazdy ◽  
Jakub Hagara ◽  
Petr Mikulik ◽  
Zdenko Zaprazny ◽  
Dusan Korytar ◽  
...  

A four-bounce monochromator assembly composed of Ge(111) and Ge(220) monolithic channel-cut monochromators with V-shaped channels in a quasi-dispersive configuration is presented. The assembly provides an optimal design in terms of the highest transmittance and photon flux density per detector pixel while maintaining high beam collimation. A monochromator assembly optimized for the highest recorded intensity per detector pixel of a linear detector placed 2.5 m behind the assembly was realized and tested by high-resolution X-ray diffraction and small-angle X-ray scattering measurements using a microfocus X-ray source. Conventional symmetric and asymmetric Ge(220) Bartels monochromators were similarly tested and the results were compared. The new assembly provides a transmittance that is an order of magnitude higher and 2.5 times higher than those provided by the symmetric and asymmetric Bartels monochromators, respectively, while the output beam divergence is twice that of the asymmetric Bartels monochromator. These results demonstrate the advantage of the proposed monochromator assembly in cases where the resolution can be partially sacrificed in favour of higher transmittance while still maintaining high beam collimation. Weakly scattering samples such as nanostructures are an example. A general advantage of the new monochromator is a significant reduction in the exposure time required to collect usable experimental data. A comparison of the theoretical and experimental results also reveals the current limitations of the technology of polishing hard-to-reach surfaces in X-ray crystal optics.


Sign in / Sign up

Export Citation Format

Share Document