Implementation of High-Efficiency and Ultra-Low-Power Transceiver for the Design of Body Channel Communication Applications

2020 ◽  
Vol 39 (12) ◽  
pp. 6034-6057
Author(s):  
Vitawat Sittakul ◽  
S. Vijayalakshmi ◽  
V. Nagarajan ◽  
K. Sakthidasan Sankaran ◽  
Sakthivel Sankaran
Keyword(s):  
Low Power ◽  
High Efficiency ◽  
Ultra Low Power

Packaging Issues and Solutions for Ultra-Low Power, High Efficiency GaN micro-LEDs for a Battery Free, Sub-mm2, Tetherless, Smart IoT System

2020 ◽  
Vol 2020 (1) ◽  
pp. 000181-000184
Author(s):  
F.R. Libsch ◽  
S.W. Bedell ◽  
B.C. Webb ◽  
A. Paidimarri
Keyword(s):  
Low Power ◽  
Flip Chip ◽  
High Efficiency ◽  
Low Voltage ◽  
Cost Effective ◽  
Back Side ◽  
Ultra Low Power ◽  
Emission Area ◽  
Sensor Platform ◽  
Side Emission

Abstract This paper discusses some design and implementation issues related to GaN micro-LED (μLED) incorporated into the heterogeneous packaging of IBM’s smart and secure sensor platform. For cost effective μLEDs, the sapphire substrate needs to be singulated reliably and with minimum kerf perimeter, be ultra-clean and smooth to allow back side emission without scattering, and high yielding front side flip chip bonding with 20μm C4s on 40μm pitch. The GaN μLEDs are design for low voltage/low power operation with an emission area of 20μm × 20μm with critical current density of ~10nA/μm2. Power and downlink data is delivered to the system via optical energy harvesting by on-silicon carrier photovoltaics and communication photodiode, respectively. Optical amplitude modulated uplink communication by heterogeneous packaging of the GaN μLED with a 14nm CMOS smart chip will be detailed and demonstrated in presentation.

Ultra-low-power sub-photon-voltage high-efficiency light-emitting diodes

2019 ◽  
Vol 13 (9) ◽  
pp. 588-592 ◽  
Author(s):  
Ning Li ◽  
Kevin Han ◽  
William Spratt ◽  
Stephen Bedell ◽  
John Ott ◽  
...  
Keyword(s):  
Low Power ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Ultra Low Power ◽  
Light Emitting

scholarly journals Analysis and Optimization of Ultra-Low-Power Rectifier with High Efficiency for Applications in Wireless Power Transmission and Energy Harvesting

2020 ◽  
Vol 19 (1) ◽  
pp. 60-85 ◽  
Author(s):  
Raphaella Luiza Resende da Silva ◽  
Sandro Trindade Mordente Gonçalves ◽  
Christian Vollaire ◽  
Arnaud Bréard ◽  
Gláucio Lopes Ramos ◽  
...  
Keyword(s):  
Energy Harvesting ◽  
Low Power ◽  
High Efficiency ◽  
Power Transmission ◽  
Wireless Power ◽  
Wireless Power Transmission ◽  
Ultra Low Power ◽  
Power Rectifier

scholarly journals A High-Efficiency CMOS Rectifier for RF Using Bulk Biasing Control Circuit

2018 ◽  
Vol 13 (2) ◽  
pp. 1-6
Author(s):  
Tarcisio Oliveira Moraes Junior ◽  
Raimundo Carlos Silvério Freire ◽  
Cleonilson Protásio de Souza
Keyword(s):  
Energy Harvesting ◽  
Low Power ◽  
Power Dissipation ◽  
High Efficiency ◽  
Control Circuit ◽  
Experimental Results ◽  
Cmos Process ◽  
Leakage Currents ◽  
Ultra Low Power ◽  
Rectifier Circuits

In MOSFET-transistor based rectifier circuits, leakage currents occur through both source-bulk and drain-bulk connections of their transistors causing some power dissipation decreasing their efficiency. Such a scenario is more worrying in ultra-low power circuits as those used in energy harvesting. As a solution, in this work it is proposed a control circuit of transistor bulk biasing that switches the bulk bias in an efficient way assuring adequate inversion of the source-bulk and drain-bulk junctions. The rectifier based on the proposed bulk biasing control circuit shows to be a high-efficiency one capable of reducing the leakage currents. To obtain experimental results, the circuit was fabricated in a 130 nm CMOS process and tested on a micromanipulator. The results were compared with other works where it is observed that the efficiency of our proposal reaches up to 72.5% or 5% higher that the best previous one.

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