Parametric study on influence function in magnetorheological finishing of single crystal silicon

2018 ◽  
Vol 100 (5-8) ◽  
pp. 1043-1054 ◽  
Author(s):  
Gourhari Ghosh ◽  
Raj K. Dalabehera ◽  
Ajay Sidpara
Keyword(s):  
Single Crystal ◽  
Parametric Study ◽  
Influence Function ◽  
Single Crystal Silicon ◽  
Magnetorheological Finishing ◽  
Crystal Silicon

A Novel TEM Sample Preparation by Using Micro Magnetorheological Finishing

2016 ◽  
Vol 874 ◽  
pp. 167-171
Author(s):  
Hu Luo ◽  
Shao Hui Yin ◽  
Feng Jun Chen
Keyword(s):  
Sample Preparation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Polished Surface ◽  
Magnetorheological Finishing ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Microscopy Image ◽  
Polishing Tool ◽  
Magnetorheological Polishing

A novel TEM sample preparation method is proposed in this paper, which utilizes magnetorheological finishing to thin TEM sample. It can effectively reduce subsurface damage caused by mechanical lapping. A magnetorheological polishing tool is designed to meet TEM sample thinning requirements. Thinning testis conducted on Φ3mm single crystal silicon. Polished surface is observed by using transmission electron microscope, and high-resolution microscopy image of single crystal silicon can be achieved.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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