A Novel TEM Sample Preparation by Using Micro Magnetorheological Finishing

2016 ◽  
Vol 874 ◽  
pp. 167-171
Author(s):  
Hu Luo ◽  
Shao Hui Yin ◽  
Feng Jun Chen
Keyword(s):  
Sample Preparation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Polished Surface ◽  
Magnetorheological Finishing ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Microscopy Image ◽  
Polishing Tool ◽  
Magnetorheological Polishing

A novel TEM sample preparation method is proposed in this paper, which utilizes magnetorheological finishing to thin TEM sample. It can effectively reduce subsurface damage caused by mechanical lapping. A magnetorheological polishing tool is designed to meet TEM sample thinning requirements. Thinning testis conducted on Φ3mm single crystal silicon. Polished surface is observed by using transmission electron microscope, and high-resolution microscopy image of single crystal silicon can be achieved.

A study of 2 MeV oxygen implantation to form deeply buried SiO2 layers

1989 ◽  
Vol 4 (5) ◽  
pp. 1227-1232 ◽  
Author(s):  
J. J. Grob ◽  
A. Grob ◽  
P. Thevenin ◽  
P. Siffert ◽  
C. d'Anterroches ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Single Step ◽  
Annealing Process ◽  
Dislocation Network ◽  
Crystal Silicon ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Distribution Moments ◽  
Best Fit

Oxygen ions were implanted into (100) oriented single crystal Si at energies in the range of 0.6 to 2 MeV at normal and oblique (60°) incidences. Oxygen concentration profiles were measured using the 16O(d, α)14N nuclear reaction for 900 keV deuterons. The experimentally measured oxygen distributions were subsequently fitted to the theoretical profiles calculated assuming the Pearson VI distribution. The distribution moments (Rp, ΔRp, ΔR⊥ skewness, and kurtosis) were deduced as the best fit parameters and compared to the computer simulation results (TRIM 87 and PRAL). Whatever the calculation method, the measured Rp and ΔRp values are close to those predicted by the theory. Deeply buried SiO2 layers were formed using a single step implantation and annealing process. A dose of 1.8 × 1018/cm2 of 2 MeV O+ was implanted into the Si substrate maintained at a temperature of 550 °C. The implanted samples were characterized using the Rutherford backscattering (RBS)/channeling technique and cross-sectional transmission electron microscopy (XTEM). The implanted samples were subsequently annealed at 1350 °C for 4 h in an Ar ambient. The annealing process results in creating a continuous SiO2 layer, 0.4 μm thick below a 1.6 μm thick top single crystal silicon overlayer. The buried SiO2 layer contains the well-known faceted Si inclusions. The density of dislocations within the top Si layer remains lower than the XTEM detection limit of 107/cm2. Between the Si overlayer and the buried SiO2 a layer of faceted longitudinal SiO2 precipitates is present. A localized dislocation network links the precipitates to the buried SiO2 layer.

Microwave Activation of Dopants & Solid Phase Epitaxy in Silicon

2007 ◽  
Vol 989 ◽  
Author(s):  
Douglas C. Thompson ◽  
J. Decker ◽  
T. L. Alford ◽  
J. W. Mayer ◽  
N. David Theodore
Keyword(s):  
Single Crystal ◽  
Microwave Heating ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Single Crystal Silicon ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Microwave System

AbstractMicrowave heating is used to activate solid phase epitaxial re-growth of amorphous silicon layers on single crystal silicon substrates. Layers of single crystal silicon were made amorphous through ion implantation with varying doses of boron or arsenic. Microwave processing occurred inside a 2.45 GHz, 1300 W cavity applicator microwave system for time-durations of 1-120 minutes. Sample temperatures were monitored using optical pyrometery. Rutherford backscattering spectrometry, and cross-sectional transmission electron microscopy were used to monitor crystalline quality in as-implanted and annealed samples. Sheet resistance readings show dopant activation occurring in both boron and arsenic implanted samples. In samples with large doses of arsenic, the defects resulting from vacancies and/or micro cluster precipitates are seen in transmission electron micrographs. Materials properties are used to explain microwave heating of silicon and demonstrate that the damage created in the implantation process serves to enhance microwave absorption.

Epitaxial Silicon-Carbon Alloy Growth by Laser Induced Melting and Solidification

1995 ◽  
Vol 398 ◽  
Author(s):  
Kenneth M. Kramer ◽  
Michael O. Thompson
Keyword(s):  
Single Crystal ◽  
Secondary Ion Mass Spectrometry ◽  
Single Crystal Silicon ◽  
Epitaxial Silicon ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
Silicon Carbon ◽  
Transmission Electron ◽  
Excimer Laser Irradiation ◽  
Secondary Ion

ABSTRACTIon implantation of carbon into single-crystal silicon followed by excimer laser irradiation was used to create supersaturated, epitaxial SixC1-x. films. Crystallization proceeded from the underlying single-crystal silicon through the carbon containing layers at velocities of approximately 5 m/s. Characterization by high-resolution x-ray diffraction and Fourier-transform infrared absorption indicate that the carbon is found predominantly on substi-tutional lattice sites for concentrations up to 1.4 at.% C. Secondary-ion mass spectrometry profiles and numerical mass transfer calculations were used to estimate the diffusion coefficient of carbon in the liquid as 2-3 × 10−4cm2/s with a segregation coefficient greater than 0.4. Unusual diffusion behavior was observed for the carbon at 1.4 at.% C. At higher concentrations, evidence of SiC precipitates was observed in transmission electron microscope images and FTIR absorption spectra.

Effect of Boron Doping on the C49 TO C54 Phase Transformation in Ti/Si (100) Bilayers

1996 ◽  
Vol 441 ◽  
Author(s):  
M. Libera ◽  
A. Quintero
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Interface Roughness ◽  
Ex Situ ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Boron Doped ◽  
Transmission Electron

AbstractWe have demonstrated that the formation of C54 TiSi2 on Boron-doped single crystal silicon substrates, under RTA annealing conditions in a Nitrogen ambient, leads to a thicker TiN capping surface layer, thinner silicide layer, higher C49 to C54 transformation temperature and greater interface roughness compared to C54 TiSi 2 formation on undoped single crystal silicon substrates. Titanium films 32 nm thick were deposited on undoped and boron-doped single crystal silicon substrates. The films were annealed at 3 /C/isn nitrogen to final quenching temperatures between 500 °C and 900 TC. Ex-situ four point probe sheet resistance, cross sectional transmission electron microscopy (XTEM), high resolution transmission electron microscopy (HRTEM) and x-ray diffraction (XRD) were used to analyze the resulting TiN on TiSi2 bilayer. The C49 to C54 transformation occurs circa 760 TC and 810 TC for the undoped and boron-doped cases respectively. HRTEM observations reveal a thick 20 nm TIN layer on the C54 TiSi2 film in the boron-doped case but only fine dispersed TiN particles embedded on the top of the silicide in the undoped case. It was observed that the resultant silicide in the boron-doped case was thinner and the TiSi2 /Si(100) interface is rougher. XRD and TEM analysis show that in the boron doped case, there is a preferred C54 (040) orientation compared to a random orientation for the undoped case.

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