Layer-by-layer growth of MgO thin films controlled by inserting a TiN seed layer using an in-situ pulsed laser deposition

2005 ◽  
Vol 81 (3) ◽  
pp. 657-661 ◽  
Author(s):  
T.L. Chen ◽  
X.M. Li ◽  
W.D. Yu ◽  
X. Zhang
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Seed Layer ◽  
Pulsed Laser ◽  
Layer Growth ◽  
Laser Deposition ◽  
Layer By Layer

scholarly journals Narrow growth window for stoichiometric, layer-by-layer growth of LaAlO3 thin films using pulsed laser deposition

2016 ◽  
Vol 443 ◽  
pp. 50-53 ◽  
Author(s):  
M. Golalikhani ◽  
Q.Y. Lei ◽  
M.A. Wolak ◽  
B.A. Davidson ◽  
X.X. Xi
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Layer Growth ◽  
Laser Deposition ◽  
Layer By Layer

Growth of CaFeOX/LaFeO3 Superlattice on SrTiO3(100) Substrates

2011 ◽  
Vol 1292 ◽  
Author(s):  
Nobuyuki Iwata ◽  
Mark Huijben ◽  
Guus Rijnders ◽  
Hiroshi Yamamoto ◽  
Dave H. A. Blank
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Layer Growth ◽  
Laser Deposition ◽  
Growth Mode ◽  
Layer By Layer ◽  
X Ray Diffraction ◽  
Reciprocal Space Mapping ◽  
X Ray

ABSTRACTThe CaFeOX(CFO) and LaFeO3(LFO) thin films as well as superlattices were fabricated on SrTiO3(100) substrates by pulsed laser deposition (PLD) method. The tetragonal LFO film grew with layer-by-layer growth mode until approximately 40 layers. In the case of CFO, initial three layers showed layer-by-layer growth, and afterward the growth mode was transferred to two layers-by-two layers (TLTL) growth mode. The RHEED oscillation was observed until the end of the growth, approximately 50nm. Orthorhombic twin CaFeO2.5 (CFO2.5) structure was obtained. However, it is expected that the initial three CFO layers are CaFeO3 (CFO3) with the valence of Fe4+. The CFO and LFO superlattice showed a step-terraces surface, and the superlattice satellite peaks in a 2θ-θ and reciprocal space mapping (RSM) x-ray diffraction (XRD) measurements, indicating that the clear interfaces were fabricated.

Layer-by-Layer Growth of GaN on Sapphire by Low Temperature Cyclic Pulsed Laser Deposition / Nitrogen RF Plasma

2002 ◽  
Vol 722 ◽  
Author(s):  
P. Sanguino ◽  
M. Niehus ◽  
S. Koynov ◽  
R. Schwarz ◽  
H. Alves ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Layer Growth ◽  
Laser Deposition ◽  
Rf Plasma ◽  
Liquid Gallium ◽  
Cyclic Process ◽  
Layer By Layer ◽  
Time Duration

AbstractRecently we have proposed a new layer-by-layer method for deposition of group-III nitrides from elemental precursors (Ga, N2) [1,2]. This technique is based on a two-step cyclic process, which alternates Pulsed Laser Deposition (PLD), of a liquid gallium target and nitrogen plasma treatment. In this work, we proceed on the development of this flexible cyclic deposition technique and study the influence of the power and time duration of the 1 mbar nitrogen RF plasma on the GaN thin films. The layers are deposited on pre-nitridated sapphire (0001) substrates at low deposition temperature (600° C) to minimise reevaporation. The cyclic GaN thin films thus obtained are compared in terms of crystal alignment and nitrogen incorporation. X-ray diffraction and optical transmission spectra are the selected tools used to characterise and compare the deposited films.

In Situ Decorated Ni Metallic Layer with CoS2-Layered Thin Films via a Layer-by-Layer Strategy Using Pulsed Laser Deposition for Enhanced Electrocatalytic OER

2021 ◽  
Author(s):  
Mahendran Mathankumar ◽  
Kannimuthu Karthick ◽  
Amal Kaitheri Nanda kumar ◽  
Subrata Kundu ◽  
Subramanian Balasubramanian
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Metallic Layer ◽  
Layer By Layer

Layer-by-layer growth of cuprate thin films by pulsed laser deposition

1993 ◽  
Vol 209 (1-3) ◽  
pp. 175-178 ◽  
Author(s):  
A. Gupta ◽  
M.Y. Chern ◽  
B.W. Hussey
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Layer Growth ◽  
Laser Deposition ◽  
Layer By Layer

Luminescent Characteristics of Pulsed Laser Deposited Epitaxial Eu-Doped Y2O3 Films

1999 ◽  
Vol 574 ◽  
Author(s):  
D. Kumar ◽  
K. G. Cho ◽  
Zhang Chen ◽  
V. Craciun ◽  
P. H. Holloway ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Yttrium Oxide ◽  
Lattice Mismatch ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Deposition Parameters

AbstractThe growth, structural and cathodoluminescent (CL) properties of europium activated yttrium oxide (Eu:Y2O3) thin films are reported. The Eu:Y2O3 films were grown in-situ using a pulsed laser deposition technique. Our results show that Eu:Y2O3 films can grow epitaxially on (100) LaAlO3 substrates under optimized deposition parameters. The epitaxial growth of Eu:Y2O3 films on LaAlO3, which has a lattice mismatch of ∼ 60 %, is explained by matching of the atom positions in the lattices of the film and the substrate after a rotation. CL data from these films are consistent with highly crystalline Eu:Y2O3 films with an intense CL emission at 611 nm.

Pulsed Laser Deposition of High-Quality Manganite Thin Films at Low Background Pressures with in-situ Reflection High Energy Electron Diffraction

2019 ◽  
Vol 3 (9) ◽  
pp. 55-63 ◽  
Author(s):  
Antonello Tebano ◽  
Carmela Aruta ◽  
Pier Gianni Medaglia ◽  
Giuseppe Balestrino ◽  
Norberto G. Boggio ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Energy ◽  
Laser Deposition ◽  
High Energy Electron ◽  
High Quality ◽  
Low Background

Microwave Phase Shifters: Epitaxial Growth by Pulsed Laser Deposition of Dielectric Ba0.5Sr0.5TiO3 Thin Films on MgO

2005 ◽  
Vol 902 ◽  
Author(s):  
YauYau Tse ◽  
P. S. Suherman ◽  
T. J. Jackson ◽  
I. P. Jones
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Strain Relaxation ◽  
Pulsed Laser ◽  
Phase Shifters ◽  
Laser Deposition ◽  
Ex Situ ◽  
Misfit Dislocations ◽  
Epitaxial Relationship

AbstractBa0.5Sr0.5TiO3 (BSTO) thin films were grown on (001) MgO using pulsed-laser deposition (PLD). The microstructures of in-situ and ex-situ annealed BSTO films were studied by X-ray diffraction and transmission electron microscopy (TEM). The films showed a cube on cube epitaxial relationship with <100> BSTO // <100> MgO. They were essentially single crystals with a columnar structure and possessed smooth surfaces. The interfaces of the BSTO films and substrates were atomically sharp, with misfit dislocations. Better crystallinity and full strain relaxation was obtained in films grown in 10-1 mbar oxygen and annealed ex-situ. A 30% increase in dielectric tuneability was achieved compared with in-situ annealing and deposition at 10-4 mbar. Threading dislocations are the dominant defects in the films grown in 10-1 mbar oxygen and annealed ex-situ, while the films with in-situ annealing show columnar structures with low angle boundaries.

In situ grown epitaxial YBa2Cu3O7−x thin films by pulsed laser deposition under reduced oxygen pressure during cool-down time

2006 ◽  
Vol 252 (13) ◽  
pp. 4573-4577 ◽  
Author(s):  
Maria Branescu ◽  
A. Vailionis ◽  
I. Ward ◽  
J. Huh ◽  
G. Socol
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition
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