Degenerate electrical conductive and excitonic photoluminescence properties of epitaxial films of wide gap p-type layered oxychalcogenides, LnCuOCh (Ln=La, Pr and Nd; Ch=S or Se)

ABSTRACTEpitaxial films of LaCuOS, a wide gap p-type semiconductor, were grown on yittria- stabi-lized-zirconia (YSZ) (001) or MgO (001) substrates by a reactive solid phase epitaxy (R-SPE) method. Crystal quality, electrical and optical properties on the epitaxial films on each substrate are examined in this paper. Achievement of the heteroepitaxial growth of LaCuOS on the MgO (001) substrate improves optical properties of LaCuOS such as spectral bandwidths and emission intensity, suggesting that the MgO (001) substrate is more preferable than the YSZ (001) for epitaxial growth substrate for LaCuOS.

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Selective Area Deposition of Passivants, Insulators, and Epitaxial Films of II-VI Compound Semiconductors

MRS Proceedings ◽

10.1557/proc-161-159 ◽

1989 ◽

Vol 161 ◽

Author(s):

D.L. Dreifus ◽

Y. Lansari ◽

J.W. Han ◽

S. Hwang ◽

J.W. Cook ◽

...

Keyword(s):

Ohmic Contacts ◽

Epitaxial Films ◽

Semiconductor Surface ◽

Epitaxial Layers ◽

Double Crystal ◽

Surface Areas ◽

Selective Area ◽

Lift Off ◽

P Type ◽

Area Deposition

ABSTRACTII-VI semiconductor surface passivants, insulators, and epitaxial films have been deposited onto selective surface areas by employing a new masking and lift-off technique. The II-VI layers were grown by either conventional or photoassisted molecular beam epitaxy (MBE). CdTe has been selectively deposited onto HgCdTe epitaxial layers as a surface passivant. Selective-area deposition of ZnS has been used in metal-insulator-semiconductor (MIS) structures. Low resistance ohmic contacts to p-type CdTe:As have also been realized through the use of selectively-placed thin films of the semi-metal HgTe followed by a thermal evaporation of In. Epitaxial layers of HgTe, HgCdTe, and HgTe-CdTe superlattices have also been grown in selective areas on CdZnTe substrates, exhibiting specular morphologies and double-crystal x-ray diffraction rocking curves (DCXD) with full widths at half maximum (FWHMs) as narrow as 140 arcseconds.

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Development of ohmic contact materials for wide gap p-type 4H-SiC

International Semiconductor Device Research Symposium, 2003 ◽

10.1109/isdrs.2003.1272120 ◽

2004 ◽

Author(s):

S. Tsukimoto ◽

O. Nakatsuka ◽

M. Moriyama ◽

M. Murakami

Keyword(s):

Ohmic Contact ◽

Contact Materials ◽

Wide Gap ◽

P Type

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Carrier Generation in p-Type Wide-Gap Oxide: SnNb2O6 Foordite

Chemistry of Materials ◽

10.1021/acs.chemmater.8b03408 ◽

2018 ◽

Vol 30 (22) ◽

pp. 8221-8225 ◽

Cited By ~ 11

Author(s):

Akane Samizo ◽

Naoto Kikuchi ◽

Yoshihiro Aiura ◽

Keishi Nishio ◽

Ko Mibu

Keyword(s):

Carrier Generation ◽

Wide Gap ◽

P Type

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Electroluminescence and Photoluminescence Properties of Porous Silicon Nanostructures with Optimum Current Density of Photo-Electrochemical Anodisation

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.667.180 ◽

2013 ◽

Vol 667 ◽

pp. 180-185

Author(s):

M. Ain Zubaidah ◽

F.S. Husairi ◽

S.F.M. Yusop ◽

Noor Asli Asnida ◽

Mohamad Rusop ◽

...

Keyword(s):

Porous Silicon ◽

Volume Ratio ◽

Boron Doping ◽

Peak Position ◽

Silicon Nanostructures ◽

Etching Time ◽

Photoluminescence Properties ◽

Current Densities ◽

Pl Spectrum ◽

P Type

P-type silicon wafer ( orientation; boron doping; 0.75 ~ 10 Ω cm-1) was used to prepare samples of porous silicon nanostructures (PSiNs). All samples have been prepared by using photo-electrochemical anodisation. A fixed etching time of 30 minutes and volume ratio of electrolyte, hydrofluoric acid 48% (HF48%) and absolute ethanol (C2H5OH), 1:1 were used for various current densities, J. There were sample A (J=10 mA/cm2), sample B (J=20 mA/cm2), sample C (J=30 mA/cm2), sample D (J=40 mA/cm2) and sample E (J=50 mA/cm2). Photoluminescence (PL) and electroluminescence (EL) spectra were investigated. Maximum peak position of PL spectrum at about ~675 nm, while the maximum EL spectrum at about ~650 nm (which is similar to the PL spectrum).

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Facile synthesis of p-type Cu2O/n-type ZnO nano-heterojunctions with novel photoluminescence properties, enhanced field emission and photocatalytic activities

Nanoscale ◽

10.1039/c2nr32797j ◽

2012 ◽

Vol 4 (24) ◽

pp. 7817 ◽

Cited By ~ 57

Author(s):

Yang Wang ◽

Shouchuan Li ◽

Hui Shi ◽

Ke Yu

Keyword(s):

Field Emission ◽

Photoluminescence Properties ◽

Facile Synthesis ◽

Photocatalytic Activities ◽

P Type

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Generation of atomic group V materials for the p-type doping of wide gap II–VI semiconductors using a novel plasma cracker

Journal of Crystal Growth ◽

10.1016/0022-0248(95)00673-7 ◽

1996 ◽

Vol 161 (1-4) ◽

pp. 86-89 ◽

Cited By ~ 12

Author(s):

H.-J. Lugauer ◽

A. Waag ◽

L. Worschech ◽

W. Ossau ◽

G. Landwehr

Keyword(s):

Atomic Group ◽

Group V ◽

Wide Gap ◽

P Type

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Synthesis and characterization of Al–N codoped p-type ZnO epitaxial films using high-temperature homo-buffer layer

Applied Surface Science ◽

10.1016/j.apsusc.2006.03.034 ◽

2006 ◽

Vol 253 (4) ◽

pp. 1903-1906 ◽

Cited By ~ 16

Author(s):

Q.Y. Zhu ◽

Z.Z. Ye ◽

G.D. Yuan ◽

J.Y. Huang ◽

L.P. Zhu ◽

...

Keyword(s):

High Temperature ◽

Buffer Layer ◽

Epitaxial Films ◽

Synthesis And Characterization ◽

P Type

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Growth and characterization of epitaxial films of ZnGeP2.

MRS Proceedings ◽

10.1557/proc-744-m8.46 ◽

2002 ◽

Vol 744 ◽

Cited By ~ 1

Author(s):

G.A. Verozubova ◽

A. I. Gribenyukov ◽

M.C. Ohmer ◽

N.C. Fernelius ◽

J.T. Goldstein

Keyword(s):

Vacancy Concentration ◽

Chemical Vapor ◽

Epitaxial Films ◽

Vapor Transport ◽

Chemical Vapor Transport ◽

Photoluminescence Properties ◽

Vapor Growth ◽

Homoepitaxial Layers ◽

Crystal Lattice Parameters

ABSTRACTThermodynamic analysis of the vapor phase over ZnGeP2 in Zn-Ge-P-Cl system has been carried out. The analysis showed that this system can be used for the vapor growth of ZnGeP2. Homoepitaxial layers of ZnGeP2 were grown in a closed system using chemical vapor transport. Electrical and photoluminescence properties of the layers were studied, and crystal lattice parameters were measured. Comparison of properties for bulk and vapor grown ZnGeP2 crystals were carried out. It was found that the vapor grown crystals have more perfect structure than the bulk ones, particularly, they have significantly lower vacancy concentration.

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