High-rate growth of epitaxial silicon at low temperatures (530–690 °C) by atmospheric pressure plasma chemical vapor deposition
2003 ◽
Vol 444
(1-2)
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pp. 138-145
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2007 ◽
Vol 46
(4B)
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pp. 2510-2515
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2006 ◽
2000 ◽
Vol 71
(8)
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pp. 3173-3177
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2004 ◽
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pp. 1075-1079
2000 ◽
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pp. 1636-1640
2000 ◽
Vol 66
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pp. 907-911