High-rate growth of epitaxial silicon at low temperatures (530–690 °C) by atmospheric pressure plasma chemical vapor deposition

2003 ◽  
Vol 444 (1-2) ◽  
pp. 138-145 ◽  
Author(s):  
Y. Mori ◽  
K. Yoshii ◽  
K. Yasutake ◽  
H. Kakiuchi ◽  
H. Ohmi ◽  
...  
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