Statistical and fractal analysis of nitrogen ion implanted tantalum thin films

2020 ◽  
Vol 126 (6) ◽  
Author(s):  
A. H. Ramezani ◽  
S. Hoseinzadeh ◽  
Zh. Ebrahiminejad
2014 ◽  
Vol 104 (12) ◽  
pp. 122902 ◽  
Author(s):  
Y. H. Gao ◽  
J. Yang ◽  
H. Shen ◽  
J. L. Sun ◽  
X. J. Meng ◽  
...  

2008 ◽  
Vol 8 (3-4) ◽  
pp. 291-294 ◽  
Author(s):  
J. Kennedy ◽  
B. Sundrakannan ◽  
R.S. Katiyar ◽  
A. Markwitz ◽  
Z. Li ◽  
...  

2017 ◽  
Vol 312 ◽  
pp. 123-127 ◽  
Author(s):  
C.B. Mello ◽  
R.A.F. Mansur ◽  
N.M. Santos ◽  
W.E.S.S. Viana ◽  
M. Ueda

2019 ◽  
Vol 9 (7) ◽  
pp. 3098 ◽  
Author(s):  
Zheng Huang ◽  
Haibo Ruan ◽  
Hong Zhang ◽  
Dongping Shi ◽  
Wanjun Li ◽  
...  

Author(s):  
A. K. Rai ◽  
P. P. Pronko

Several techniques have been reported in the past to prepare cross(x)-sectional TEM specimen. These methods are applicable when the sample surface is uniform. Examples of samples having uniform surfaces are ion implanted samples, thin films deposited on substrates and epilayers grown on substrates. Once device structures are fabricated on the surfaces of appropriate materials these surfaces will no longer remain uniform. For samples with uniform surfaces it does not matter which part of the surface region remains in the thin sections of the x-sectional TEM specimen since it is similar everywhere. However, in order to study a specific region of a device employing x-sectional TEM, one has to make sure that the desired region is thinned. In the present work a simple way to obtain thin sections of desired device region is described.


Author(s):  
D J H Cockayne ◽  
D R McKenzie

The study of amorphous and polycrystalline materials by obtaining radial density functions G(r) from X-ray or neutron diffraction patterns is a well-developed technique. We have developed a method for carrying out the same technique using electron diffraction in a standard TEM. It has the advantage that studies can be made of thin films, and on regions of specimen too small for X-ray and neutron studies. As well, it can be used to obtain nearest neighbour distances and coordination numbers from the same region of specimen from which HREM, EDS and EELS data is obtained.The reduction of the scattered intensity I(s) (s = 2sinθ/λ ) to the radial density function, G(r), assumes single and elastic scattering. For good resolution in r, data must be collected to high s. Previous work in this field includes pioneering experiments by Grigson and by Graczyk and Moss. In our work, the electron diffraction pattern from an amorphous or polycrystalline thin film is scanned across the entrance aperture to a PEELS fitted to a conventional TEM, using a ramp applied to the post specimen scan coils. The elastically scattered intensity I(s) is obtained by selecting the elastically scattered electrons with the PEELS, and collecting directly into the MCA. Figure 1 shows examples of I(s) collected from two thin ZrN films, one polycrystalline and one amorphous, prepared by evaporation while under nitrogen ion bombardment.


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