A technique to prepare cross-sectional TEM specimens of semiconducting devices

1986 ◽  
Vol 44 ◽  
pp. 742-743
Author(s):  
A. K. Rai ◽  
P. P. Pronko
Keyword(s):  
Thin Films ◽  
Surface Region ◽  
Sample Surface ◽  
Specific Region ◽  
Cross Sectional ◽  
Thin Sections ◽  
The Past ◽  
Device Structures ◽  
Ion Implanted

Several techniques have been reported in the past to prepare cross(x)-sectional TEM specimen. These methods are applicable when the sample surface is uniform. Examples of samples having uniform surfaces are ion implanted samples, thin films deposited on substrates and epilayers grown on substrates. Once device structures are fabricated on the surfaces of appropriate materials these surfaces will no longer remain uniform. For samples with uniform surfaces it does not matter which part of the surface region remains in the thin sections of the x-sectional TEM specimen since it is similar everywhere. However, in order to study a specific region of a device employing x-sectional TEM, one has to make sure that the desired region is thinned. In the present work a simple way to obtain thin sections of desired device region is described.

Epitaxial cerium oxide buffer layers and YBa2Cu3O7−δ thin films for microwave device applications

1999 ◽  
Vol 14 (6) ◽  
pp. 2385-2393 ◽  
Author(s):  
Sissel N. Jacobsen ◽  
Lynnette D. Madsen ◽  
Ulf Helmersson
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Rf Magnetron Sputtering ◽  
Sample Surface ◽  
Columnar Structure ◽  
Buffer Layers ◽  
Ex Situ ◽  
Epitaxial Relationship ◽  
Cross Sectional ◽  
Appreciable Change

CeO2 films with thicknesses ranging from 8.8 to 199 nm were grown on Al2O3 (1102) (R-cut) substrates by off-axis rf magnetron sputtering. X-ray diffraction showed an epitaxial relationship with the CeO2 (001) planes parallel to the Al2O3 (1102) planes for all film thicknesses. Atomic force microscopy (AFM) revealed a rough surface morphology consisting of crystallites with lateral dimensions of 10–90 nm. In the thinnest film, these crystallites were regularly shaped and uniformly distributed on the substrate, while they were rectangularly shaped and oriented mainly in two directions, orthogonal to each other, in the thicker films. The surface roughness of the films increased with increasing layer thickness. Characterization of the microstructure was done by cross-sectional transmission electron microscopy (XTEM) and showed a polycrystalline, highly oriented, columnar structure with a top layer terminated by (111)-facets. High-quality YBa2Cu3O7−δ (YBCO) thin films were deposited directly onto the CeO2 layers. XTEM, rather surprisingly, showed a smooth interface between the YBCO and CeO2 layer. Postdeposition ex situ annealing was carried out on two CeO2 films and evaluated by AFM. Upon annealing samples at 930 °C, a relatively smooth morphology without facets was obtained. Annealing films at 800 °C caused no appreciable change in surface morphology, whereas igniting a YBCO plasma during a similar anneal clearly altered the sample surface, giving facets that were rounded.

scholarly journals Materials Issues in Molecular Beam Epitaxy

1994 ◽  
Vol 340 ◽  
Author(s):  
J.Y. Tsao
Keyword(s):  
Thin Films ◽  
State Physics ◽  
Crystal Growth ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Solid State Physics ◽  
The Past ◽  
Device Structures ◽  
Device Applications ◽  
Interesting Area

The technology of crystal growth has advanced enormously during the past two decades; among those advances, the development and refinement of molecular beam epitaxy (MBE) has been among the most important. Crystals grown by MBE are more precisely controlled than those grown by any other method, and today form the basis for many of the most advanced device structures in solid-state physics, electronics and optoelectronics.In addition toits numerous device applications, MBE is also an enormously rich and interesting area ofmaterials science in and of itself. In this paper, we discuss a few examples of some of these materials issues, organized according to whether they involve bulk, thin films, orsurfaces [1].

Improving the wear resistance of Al–Si alloy by ion implantation

1997 ◽  
Vol 12 (12) ◽  
pp. 3246-3249 ◽  
Author(s):  
Y. Itoh ◽  
H. Azuma ◽  
A. Itoh ◽  
T. Hioki
Keyword(s):  
Mechanical Properties ◽  
Wear Resistance ◽  
Ion Implantation ◽  
Sample Surface ◽  
Knoop Hardness ◽  
The Other ◽  
Xps Analysis ◽  
Cross Sectional ◽  
Steel Balls ◽  
Ion Implanted

The mechanical properties of ion-implanted Al–Si alloy were studied using disk samples of alloy irradiated with Ar+, B+, and N2+ ions. Knoop hardness of ASTM 336.0 disks increased from 117 to 165 kgf/mm2 upon N2+ ion implantation. To measure tribological properties, lubricated ball-on-disk tests were performed using steel balls. The coefficients of friction of ion-implanted disks were higher than those of unimplanted ones. Ion implantation improved the wear resistance of the disks, and in the case of N2+ ion-implanted disks, the worn volume was smaller than 10−4 mm3. XPS analysis for the N2+ ion-implanted samples revealed the formation of aluminum and silicon nitride on the sample surface. On the other hand, the cross-sectional image of the ion-implanted surface showed precipitated Si which is held under the implanted N2+ ions.

Investigations of Microstructural Changes in Nickel Thin Films on Ionimplanted Silicon by Cross-Sectional Transmission Electron Microscopy with Intermittent Annealings in N2 Ambient

1987 ◽  
Vol 94 ◽  
Author(s):  
S. W. Lu ◽  
C. W. Nieh ◽  
C. S. Chang ◽  
L. J. Chen
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Cross Sectional ◽  
Nickel Thin Films ◽  
Silicon Thin Films ◽  
Transmission Electron ◽  
Induced Defects ◽  
And Diffusion ◽  
Ion Implanted

ABSTRACTThe feasibility of studying dynamical changes in nickel thin films on ion-implanted silicon thin films by cross-sectional transmission electron microscopy (XTEM) with intermittent annealings in N2 ambient up to 850 °C is demonstrated. Interactions of nickel thin films with oxidation induced stacking faults, fluorine bubbles and process-induced defects in ion implanted silicon are provided as examples. The technique may be applied to clarify a number of important issues encountered in the study of the reactions and diffusion of thin films and obtain informations otherwise unattainable.

Mitochondrial Reconstructions Based on Serial Thick Sections and HVEM

1975 ◽  
Vol 33 ◽  
pp. 286-287
Author(s):  
Jerome J. Paulin
Keyword(s):  
Imaging Techniques ◽  
Three Dimensional ◽  
Posterior Pole ◽  
Dimensional Structure ◽  
Stereo Imaging ◽  
Thin Sections ◽  
Anatomical Features ◽  
The Past ◽  
Cellular Components ◽  
Mitochondrial Reticulum

Within the past decade it has become apparent that HVEM offers the biologist a means to explore the three-dimensional structure of cells and/or organelles. Stereo-imaging of thick sections (e.g. 0.25-10 μm) not only reveals anatomical features of cellular components, but also reduces errors of interpretation associated with overlap of structures seen in thick sections. Concomitant with stereo-imaging techniques conventional serial Sectioning methods developed with thin sections have been adopted to serial thick sections (≥ 0.25 μm). Three-dimensional reconstructions of the chondriome of several species of trypanosomatid flagellates have been made from tracings of mitochondrial profiles on cellulose acetate sheets. The sheets are flooded with acetone, gluing them together, and the model sawed from the composite and redrawn.The extensive mitochondrial reticulum can be seen in consecutive thick sections of (0.25 μm thick) Crithidia fasciculata (Figs. 1-2). Profiles of the mitochondrion are distinguishable from the anterior apex of the cell (small arrow, Fig. 1) to the posterior pole (small arrow, Fig. 2).

Preparation of cross-sectional samples for near-surface TEM studies

1987 ◽  
Vol 45 ◽  
pp. 380-381
Author(s):  
R.C. Dickenson ◽  
K.R. Lawless
Keyword(s):  
Standard Sample ◽  
Surface Region ◽  
Specimen Preparation ◽  
Thick Sheet ◽  
Drill Bit ◽  
Sample Holder ◽  
Metal Interface ◽  
Cross Sectional ◽  
Near Surface ◽  
Cold Worked

In thermal oxidation studies, the structure of the oxide-metal interface and the near-surface region is of great importance. A technique has been developed for constructing cross-sectional samples of oxidized aluminum alloys, which reveal these regions. The specimen preparation procedure is as follows: An ultra-sonic drill is used to cut a 3mm diameter disc from a 1.0mm thick sheet of the material. The disc is mounted on a brass block with low-melting wax, and a 1.0mm hole is drilled in the disc using a #60 drill bit. The drill is positioned so that the edge of the hole is tangent to the center of the disc (Fig. 1) . The disc is removed from the mount and cleaned with acetone to remove any traces of wax. To remove the cold-worked layer from the surface of the hole, the disc is placed in a standard sample holder for a Tenupol electropolisher so that the hole is in the center of the area to be polished.

Comparison of Ion-Milling Techniques For Cross-Sectional TEM of Semiconductors

1985 ◽  
Vol 43 ◽  
pp. 166-167
Author(s):  
Julia T. Luck ◽  
C. W. Boggs ◽  
S. J. Pennycook
Keyword(s):  
Analytical Techniques ◽  
Sample Surface ◽  
Ion Milling ◽  
Cross Sectional ◽  
Reliable Technique ◽  
Near Surface ◽  
Transmission Electron ◽  
Thin Region ◽  
Transient Thermal

The use of cross-sectional Transmission Electron Microscopy (TEM) has become invaluable for the characterization of the near-surface regions of semiconductors following ion-implantation and/or transient thermal processing. A fast and reliable technique is required which produces a large thin region while preserving the original sample surface. New analytical techniques, particularly the direct imaging of dopant distributions, also require good thickness uniformity. Two methods of ion milling are commonly used, and are compared below. The older method involves milling with a single gun from each side in turn, whereas a newer method uses two guns to mill from both sides simultaneously.

Characterization of reactive phase formation in sputter-deposited Ni/Al multilayer thin films using TEM

1996 ◽  
Vol 54 ◽  
pp. 1000-1001
Author(s):  
G. Lucadamo ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Dark Field ◽  
Nickel Layer ◽  
Multilayer Thin Films ◽  
Cross Sectional ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Constant Heating

The subject of reactive phase formation in multilayer thin films of varying periodicity has stimulated much research over the past few years. Recent studies have sought to understand the reactions that occur during the annealing of Ni/Al multilayers. Dark field imaging from transmission electron microscopy (TEM) studies in conjunction with in situ x-ray diffraction measurements, and calorimetry experiments (isothermal and constant heating rate), have yielded new insights into the sequence of phases that occur during annealing and the evolution of their microstructure.In this paper we report on reactive phase formation in sputter-deposited lNi:3Al multilayer thin films with a periodicity A (the combined thickness of an aluminum and nickel layer) from 2.5 to 320 nm. A cross-sectional TEM micrograph of an as-deposited film with a periodicity of 10 nm is shown in figure 1. This image shows diffraction contrast from the Ni grains and occasionally from the Al grains in their respective layers.

TEM sample preparation of wear-tested room-temperature pulsed-laser-deposited thin films of MoS2 by ultramicrotomy

1993 ◽  
Vol 51 ◽  
pp. 1118-1119
Author(s):  
Pamela F. Lloyd ◽  
Scott D. Walck
Keyword(s):  
Thin Films ◽  
Sample Preparation ◽  
Room Temperature ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Ultra High Vacuum ◽  
Wear Testing ◽  
Preparation Technique ◽  
Cross Sectional ◽  
Aerospace Applications

Pulsed laser deposition (PLD) is a novel technique for the deposition of tribological thin films. MoS2 is the archetypical solid lubricant material for aerospace applications. It provides a low coefficient of friction from cryogenic temperatures to about 350°C and can be used in ultra high vacuum environments. The TEM is ideally suited for studying the microstructural and tribo-chemical changes that occur during wear. The normal cross sectional TEM sample preparation method does not work well because the material’s lubricity causes the sandwich to separate. Walck et al. deposited MoS2 through a mesh mask which gave suitable results for as-deposited films, but the discontinuous nature of the film is unsuitable for wear-testing. To investigate wear-tested, room temperature (RT) PLD MoS2 films, the sample preparation technique of Heuer and Howitt was adapted.Two 300 run thick films were deposited on single crystal NaCl substrates. One was wear-tested on a ball-on-disk tribometer using a 30 gm load at 150 rpm for one minute, and subsequently coated with a heavy layer of evaporated gold.

Sign in / Sign up

Export Citation Format

Share Document