Correlation between Kink effect and trapping mechanism through H1 hole trap in Al0.22Ga0.78N/GaN/SiC HEMTs by current DLTS: field effect enhancement

We study the ‘up-kick’ current characteristics observed in black phosphorus (BP) field-effect transistors while the BP thickness increased above 10 nm, and effectively suppress the kink effect via the N2 plasma treatment.

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Photoemissions related to the kink effect in GaAs metal‐semiconductor field‐effect transistors with an Al0.2Ga0.8As/GaAs buffer layer

Applied Physics Letters ◽

10.1063/1.109978 ◽

1993 ◽

Vol 63 (5) ◽

pp. 648-650 ◽

Cited By ~ 7

Author(s):

Junzi Haruyama ◽

Norio Goto ◽

Yasunobu Nashimoto

Keyword(s):

Buffer Layer ◽

Field Effect ◽

Field Effect Transistors ◽

Kink Effect ◽

Gaas Buffer Layer

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Hole trap related hysteresis in pentacene field-effect transistors

Journal of Applied Physics ◽

10.1063/1.2999643 ◽

2008 ◽

Vol 104 (8) ◽

pp. 084501 ◽

Cited By ~ 59

Author(s):

C. Ucurum ◽

H. Goebel ◽

F. A. Yildirim ◽

W. Bauhofer ◽

W. Krautschneider

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Hole Trap

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Elimination of the kink effect in GaAs metal semiconductor field‐effect transistors by utilizing a low‐temperature‐grown buffer layer

Applied Physics Letters ◽

10.1063/1.107731 ◽

1992 ◽

Vol 61 (8) ◽

pp. 928-930 ◽

Cited By ~ 10

Author(s):

Junzi Haruyama ◽

Norio Goto ◽

Hitoshi Negishi

Keyword(s):

Low Temperature ◽

Buffer Layer ◽

Field Effect ◽

Field Effect Transistors ◽

Kink Effect

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Kink effect for 28 nm n-channel field-effect transistors after decoupled plasma nitridation treatment with annealing temperatures

International Journal of Nanotechnology ◽

10.1504/ijnt.2015.066194 ◽

2015 ◽

Vol 12 (1/2) ◽

pp. 59 ◽

Cited By ~ 1

Author(s):

Shea Jue Wang ◽

Mu Chun Wang ◽

Win Der Lee ◽

Wen Sheng Chen ◽

Heng Sheng Huang ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Plasma Nitridation ◽

Annealing Temperatures ◽

Kink Effect ◽

28 Nm

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Linear kink effect Lorentzians in the noise spectra of n- and p-channel fin field-effect transistors processed in standard and strained silicon-on-insulator substrates

Solid-State Electronics ◽

10.1016/j.sse.2009.03.021 ◽

2009 ◽

Vol 53 (6) ◽

pp. 613-620 ◽

Cited By ~ 2

Author(s):

N. Lukyanchikova ◽

N. Garbar ◽

V. Kudina ◽

A. Smolanka ◽

C. Claeys ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Silicon On Insulator ◽

Strained Silicon ◽

Kink Effect ◽

Noise Spectra

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Investigation of charge trapping mechanism in MoS2 field effect transistor by incorporating Al into host La2O3 as gate dielectric

Nanotechnology ◽

10.1088/1361-6528/abf2fd ◽

2021 ◽

Author(s):

kun yang ◽

Yanning Chen ◽

Shulong Wang ◽

Tao Han ◽

Hongxia Liu

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Charge Trapping ◽

Trapping Mechanism ◽

Effect Transistor

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The two timescales in the charge trapping mechanism for the hysteresis behavior in graphene field effect transistors

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-016-5052-x ◽

2016 ◽

Vol 27 (9) ◽

pp. 9847-9852 ◽

Cited By ~ 2

Author(s):

Da-cheng Mao ◽

Shao-qing Wang ◽

Song-ang Peng ◽

Da-yong Zhang ◽

Jing-yuan Shi ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Charge Trapping ◽

Hysteresis Behavior ◽

Trapping Mechanism

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dc and rf measurements of the kink effect in 0.2 μm gate length AlInAs/GaInAs/InP modulation‐doped field‐effect transistors

Applied Physics Letters ◽

10.1063/1.101151 ◽

1989 ◽

Vol 54 (21) ◽

pp. 2139-2141 ◽

Cited By ~ 27

Author(s):

L. F. Palmateer ◽

P. J. Tasker ◽

W. J. Schaff ◽

L. D. Nguyen ◽

L. F. Eastman

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Gate Length ◽

Kink Effect ◽

Rf Measurements

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