Kink effect for 28 nm n-channel field-effect transistors after decoupled plasma nitridation treatment with annealing temperatures

2015 ◽  
Vol 12 (1/2) ◽  
pp. 59 ◽  
Author(s):  
Shea Jue Wang ◽  
Mu Chun Wang ◽  
Win Der Lee ◽  
Wen Sheng Chen ◽  
Heng Sheng Huang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Plasma Nitridation ◽  
Annealing Temperatures ◽  
Kink Effect ◽  
28 Nm

Gate Leakage for 28 nm Stacked HfZrOx Dielectric of p-Channel MOSFETs After Decoupled Plasma Nitridation Treatment With Annealing Temperatures

2014 ◽  
Vol 42 (12) ◽  
pp. 3712-3715 ◽  
Author(s):  
Shea-Jue Wang ◽  
Mu-Chun Wang ◽  
Win-Der Lee ◽  
Jie-Min Yang ◽  
L. S. Huang ◽  
...  
Keyword(s):  
Gate Leakage ◽  
Plasma Nitridation ◽  
Annealing Temperatures ◽  
28 Nm

Exploring and suppressing the kink effect of black phosphorus field-effect transistors operating in the saturation regime

Nanoscale ◽  
2019 ◽  
Vol 11 (21) ◽  
pp. 10420-10428 ◽  
Author(s):  
Ying Xia ◽  
Guoli Li ◽  
Bei Jiang ◽  
Zhenyu Yang ◽  
Xingqiang Liu ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Black Phosphorus ◽  
Saturation Regime ◽  
Kink Effect ◽  
Current Characteristics

We study the ‘up-kick’ current characteristics observed in black phosphorus (BP) field-effect transistors while the BP thickness increased above 10 nm, and effectively suppress the kink effect via the N2 plasma treatment.

Interface traps in 28 nm node field effect transistors detected by capacitance transient spectroscopy

2017 ◽  
Vol 214 (7) ◽  
pp. 1700182
Author(s):  
Teimuraz Mchedlidze ◽  
Maximilian Drescher ◽  
Elke Erben ◽  
Jörg Weber
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Interface Traps ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
28 Nm

High-Temperature Operation of Pentacene Field-Effect Transistors with Polyimide Gate Insulators

2005 ◽  
Vol 871 ◽  
Author(s):  
Tsuyoshi Sekitani ◽  
Shingo Iba ◽  
Yusaku Kato ◽  
Yoshiaki Noguchi ◽  
Takao Someya ◽  
...  
Keyword(s):  
High Temperature ◽  
Field Effect ◽  
Room Temperature ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Current Ratio ◽  
Excellent Thermal Stability ◽  
Annealing Temperatures ◽  
High Temperature Operation ◽  
Thermal Stability Of

AbstractWe have fabricated pentacene field-effect transistors (FETs) on polyimide-sheet films with polyimide gate dielectric layers and parylene encapsulation layer, and investigated the high-temperature performance. It is found that the mobility of encapsulated FETs is enhanced from 0.5 to 0.8 cm2/Vs when the device is heated from room temperature to 160°C under light-shielding nitrogen environment. Furthermore, after the removal of annealing temperatures up to 160°C, the transistor characteristic of mobility and on/off current ratio show no significant changes, demonstration the excellent thermal stability of the present organic FETs.

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