CuO nanowire-based metal semiconductor metal infrared photodetector

2021 ◽  
Vol 127 (5) ◽  
Author(s):  
Menuvolu Tetseo ◽  
Prasenjit Deb ◽  
Sudem Daimary ◽  
Jay Chandra Dhar
Keyword(s):  
Infrared Photodetector ◽  
Metal Semiconductor Metal ◽  
Cuo Nanowire

Metal-semiconductor-metal infrared photodetector based on PbTe nanowires with fast response and recovery time

2017 ◽  
Vol 404 ◽  
pp. 7-11 ◽  
Author(s):  
Xin Xin Gong ◽  
Guang Tao Fei ◽  
Wen Biao Fu ◽  
Bin Nian Zhong ◽  
Xu Dong Gao ◽  
...  
Keyword(s):  
Recovery Time ◽  
Fast Response ◽  
Infrared Photodetector ◽  
Metal Semiconductor Metal ◽  
Response And Recovery

A CuO nanowire infrared photodetector

2011 ◽  
Vol 171 (2) ◽  
pp. 207-211 ◽  
Author(s):  
S.B. Wang ◽  
C.H. Hsiao ◽  
S.J. Chang ◽  
K.T. Lam ◽  
K.H. Wen ◽  
...  
Keyword(s):  
Infrared Photodetector ◽  
Cuo Nanowire

Simulation of tuning graphene plasmonic behaviors by ferroelectric domains for self-driven infrared photodetector applications

Nanoscale ◽  
2019 ◽  
Vol 11 (43) ◽  
pp. 20868-20875 ◽  
Author(s):  
Junxiong Guo ◽  
Yu Liu ◽  
Yuan Lin ◽  
Yu Tian ◽  
Jinxing Zhang ◽  
...  
Keyword(s):  
Finite Element Method ◽  
Finite Element ◽  
Interfacial Effect ◽  
Infrared Photodetector ◽  
The Finite Element Method ◽  
Ferroelectric Domains ◽  
Element Method

We propose a graphene plasmonic infrared photodetector tuned by ferroelectric domains and investigate the interfacial effect using the finite element method.

CHARACTERIZATION OF AN AlGaAs/GaAs METAL-SEMICONDUCTOR-METAL PHOTODETECTOR

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-325-C4-328
Author(s):  
M. ZIRNGIBL ◽  
R. SACHOT ◽  
M. ILEGEMS
Keyword(s):  
Metal Semiconductor Metal

Synthesis of HgTe colloidal quantum dots for infrared photodetector

2021 ◽  
Vol 291 ◽  
pp. 129523
Author(s):  
Dan Liu ◽  
Sen Wen ◽  
Yuxiao Guo ◽  
Xingtian Yin ◽  
Wenxiu Que
Keyword(s):  
Quantum Dots ◽  
Colloidal Quantum Dots ◽  
Infrared Photodetector

scholarly journals Energy level scheme ofInAs/InxGa1−xAs/GaAsquantum-dots-in-a-well infrared photodetector structures

2010 ◽  
Vol 82 (3) ◽  
Author(s):  
L. Höglund ◽  
K. F. Karlsson ◽  
P. O. Holtz ◽  
H. Pettersson ◽  
M. E. Pistol ◽  
...  
Keyword(s):  
Energy Level ◽  
Level Scheme ◽  
Infrared Photodetector ◽  
Energy Level Scheme

scholarly journals Monolayer Twisted Graphene-Based Schottky Transistor

Materials ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4109
Author(s):  
Ramin Ahmadi ◽  
Mohammad Taghi Ahmadi ◽  
Seyed Saeid Rahimian Koloor ◽  
Michal Petrů
Keyword(s):  
Dispersion Relation ◽  
Quantum Tunneling ◽  
Research Study ◽  
Channel Length ◽  
New Class ◽  
Metal Semiconductor Metal ◽  
The Relationship ◽  
Graphene Structures ◽  
Twisted Graphene ◽  
Device Technology

The outstanding properties of graphene-based components, such as twisted graphene, motivates nanoelectronic researchers to focus on their applications in device technology. Twisted graphene as a new class of graphene structures is investigated in the platform of transistor application in this research study. Therefore, its geometry effect on Schottky transistor operation is analyzed and the relationship between the diameter of twist and number of twists are explored. A metal–semiconductor–metal twisted graphene-based junction as a Schottky transistor is considered. By employing the dispersion relation and quantum tunneling the variation of transistor performance under channel length, the diameter of twisted graphene, and the number of twists deviation are studied. The results show that twisted graphene with a smaller diameter affects the efficiency of twisted graphene-based Schottky transistors. Additionally, as another main characteristic, the ID-VGS is explored, which indicates that the threshold voltage is increased by diameter and number of twists in this type of transistor.

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