Low-bias resistive switching in BaTiO3/Al2O3/ITO structures with various thicknesses of Al2O3 layer

2021 ◽  
Vol 127 (6) ◽  
Author(s):  
Chaotao He ◽  
Yu Lu ◽  
Yuanyuan Tang ◽  
Xiulin Li ◽  
Peng Chen
Keyword(s):  
Resistive Switching ◽  
Al2o3 Layer

scholarly journals Switching Characteristics and Mechanism Using Al2O3 Interfacial Layer in Al/Cu/GdOx/Al2O3/TiN Memristor

Electronics ◽  
2020 ◽  
Vol 9 (9) ◽  
pp. 1466
Author(s):  
Chiao-Fan Chiu ◽  
Sreekanth Ginnaram ◽  
Asim Senapati ◽  
Yi-Pin Chen ◽  
Siddheswar Maikap
Keyword(s):  
Resistive Switching ◽  
Photoelectron Spectroscopy ◽  
Interfacial Layer ◽  
Stable State ◽  
Schematic Model ◽  
Bipolar Resistive Switching ◽  
Al2o3 Layer ◽  
X Ray ◽  
Resistance State ◽  
Switching Characteristics

Resistive switching characteristics by using the Al2O3 interfacial layer in an Al/Cu/GdOx/Al2O3/TiN memristor have been enhanced as compared to the Al/Cu/GdOx/TiN structure owing to the insertion of Al2O3 layer for the first time. Polycrystalline grain, chemical composition, and surface roughness of defective GdOx film have been investigated by transmission electron microscope (TEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and atomic force microscopy (AFM). For bipolar resistive switching (BRS) characteristics, the conduction mechanism of high resistance state (HRS) is a space-charge limited current for the Al/Cu/GdOx/TiN device while the Al/Cu/GdOx/Al2O3/TiN device shows Schottky emission. However, both devices show Ohmic at a low resistance state (LRS). After the device has been SET, the Cu filament evidences by both TEM and elemental mapping. Oxygen-rich at the Cu/GdOx interface and Al2O3 layer are confirmed by energy dispersive X-ray spectroscopy (EDS) line profile. The Al/Cu/GdOx/Al2O3/TiN memristor has lower RESET current, higher speed operation of 100 ns, long read pulse endurance of >109 cycles, good data retention, and the memristor with a large resistance ratio of >105 is operated at a low current of 1.5 µA. The complementary resistive switching (CRS) characteristics of the Al/Cu/GdOx/Al2O3/TiN memristor show also a low current operation as compared to the Al/Cu/GdOx/TiN device (300 µA vs. 3.1 mA). The transport mechanism is the Cu ion migration and it shows Ohmic at low field and hopping at high field regions. A larger hopping distance of 1.82 nm at the Cu/GdOx interface is obtained as compared to a hopping distance of 1.14 nm in the Al2O3 layer owing to a larger Cu filament length at the Cu/GdOx interface than the Al2O3 layer. Similarly, the CRS mechanism is explained by using the schematic model. The CRS characteristics show a stable state with long endurance of >1000 cycles at a pulse width of 1 µs owing to the insertion of Al2O3 interfacial layer in the Al/Cu/GdOx/Al2O3/TiN structure.

Resistive switching in FeNi/Al2O3/NiO/Pt structure with various Al2O3 layer thicknesses

2020 ◽  
Vol 493 ◽  
pp. 165728 ◽  
Author(s):  
Guangyu Wang ◽  
Lei Hu ◽  
Yidong Xia ◽  
Qi Li ◽  
Qingyu Xu
Keyword(s):  
Resistive Switching ◽  
Al2o3 Layer

Deposition of Bi2O3 Thin Films and Their Resistive Switching Characteristics

2012 ◽  
Vol 27 (3) ◽  
pp. 323-326
Author(s):  
Zhen-Guo JI ◽  
Jun-Jie WANG ◽  
Qi-Nan MAO ◽  
Jun-Hua XI
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Switching Characteristics

Titania Based Nano-ionic Memristive Crossbar Arrays: Fabrication and Resistive Switching Characteristics

2019 ◽  
Vol 9 (4) ◽  
pp. 486-493 ◽  
Author(s):  
S. Sahoo ◽  
P. Manoravi ◽  
S.R.S. Prabaharan
Keyword(s):  
Resistive Switching ◽  
Bottom Electrode ◽  
Rf Sputtering ◽  
Hysteresis Curve ◽  
Bipolar Switching ◽  
Post Annealing ◽  
Endurance Tests ◽  
Bilayer Device ◽  
Switching Characteristics ◽  
Pinched Hysteresis

Introduction: Intrinsic resistive switching properties of Pt/TiO2-x/TiO2/Pt crossbar memory array has been examined using the crossbar (4×4) arrays fabricated by using DC/RF sputtering under specific conditions at room temperature. Materials and Methods: The growth of filament is envisaged from bottom electrode (BE) towards the top electrode (TE) by forming conducting nano-filaments across TiO2/TiO2-x bilayer stack. Non-linear pinched hysteresis curve (a signature of memristor) is evident from I-V plot measured using Pt/TiO2-x /TiO2/Pt bilayer device (a single cell amongst the 4×4 array is used). It is found that the observed I-V profile shows two distinguishable regions of switching symmetrically in both SET and RESET cycle. Distinguishable potential profiles are evident from I-V curve; in which region-1 relates to the electroformation prior to switching and region-2 shows the switching to ON state (LRS). It is observed that upon reversing the polarity, bipolar switching (set and reset) is evident from the facile symmetric pinched hysteresis profile. Obtaining such a facile switching is attributed to the desired composition of Titania layers i.e. the rutile TiO2 (stoichiometric) as the first layer obtained via controlled post annealing (650oC/1h) process onto which TiO2-x (anatase) is formed (350oC/1h). Results: These controlled processes adapted during the fabrication step help manipulate the desired potential barrier between metal (Pt) and TiO2 interface. Interestingly, this controlled process variation is found to be crucial for measuring the switching characteristics expected in Titania based memristor. In order to ensure the formation of rutile and anatase phases, XPS, XRD and HRSEM analyses have been carried out. Conclusion: Finally, the reliability of bilayer memristive structure is investigated by monitoring the retention (104 s) and endurance tests which ensured the reproducibility over 10,000 cycles.

scholarly journals Investigation of resistive switching in gallium oxide nanostructures formed by local anodic oxidation

2019 ◽  
Vol 1410 ◽  
pp. 012233 ◽  
Author(s):  
R V Tominov ◽  
N A Polupanov ◽  
V I Avilov ◽  
M S Solodovnik ◽  
N V Parshina ◽  
...  
Keyword(s):  
Anodic Oxidation ◽  
Resistive Switching ◽  
Gallium Oxide ◽  
Oxide Nanostructures ◽  
Local Anodic Oxidation

Bipolar Resistive Switching in the Ag/Sb2Te3/Pt Heterojunction

2021 ◽  
Author(s):  
Zhenhua Wu ◽  
Yinxiao Feng ◽  
Yan Liu ◽  
Huilie Shi ◽  
Shuai Zhang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Bipolar Resistive Switching

scholarly journals Resistance state evolution under constant electric stress on a MoS2 non-volatile resistive switching device

RSC Advances ◽  
2020 ◽  
Vol 10 (69) ◽  
pp. 42249-42255
Author(s):  
Xiaohan Wu ◽  
Ruijing Ge ◽  
Yifu Huang ◽  
Deji Akinwande ◽  
Jack C. Lee
Keyword(s):  
Resistive Switching ◽  
Constant Voltage ◽  
Switching Device ◽  
Current Stress ◽  
Electric Stress ◽  
State Evolution ◽  
Conductive Bridge ◽  
Resistance State ◽  
Switching Devices

Constant voltage and current stress were applied on MoS2 resistive switching devices, showing unique behaviors explained by a modified conductive-bridge-like model.

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