Metal-induced solid-phase crystallization of hydrogenated amorphous silicon: dependence on metal type and annealing temperature

2000 ◽  
Vol 70 (5) ◽  
pp. 587-590 ◽  
Author(s):  
Y.Z. Wang ◽  
O.O. Awadelkarim
Keyword(s):  
Amorphous Silicon ◽  
Annealing Temperature ◽  
Solid Phase ◽  
Hydrogenated Amorphous Silicon ◽  
Solid Phase Crystallization ◽  
Metal Type ◽  
Hydrogenated Amorphous

Rapid solid-phase crystallization of high-rate, hot-wire chemical-vapor-deposited hydrogenated amorphous silicon

2006 ◽  
Vol 89 (16) ◽  
pp. 161910 ◽  
Author(s):  
David L. Young ◽  
Paul Stradins ◽  
Yueqin Xu ◽  
Lynn Gedvilas ◽  
Bob Reedy ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Solid Phase ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Hot Wire ◽  
Solid Phase Crystallization ◽  
Chemical Vapor Deposited ◽  
Hydrogenated Amorphous

Real-time optical spectroscopy study of solid-phase crystallization in hydrogenated amorphous silicon

2006 ◽  
Vol 89 (12) ◽  
pp. 121921 ◽  
Author(s):  
P. Stradins ◽  
D. L. Young ◽  
Y. Yan ◽  
E. Iwaniczko ◽  
Y. Xu ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Real Time ◽  
Optical Spectroscopy ◽  
Solid Phase ◽  
Hydrogenated Amorphous Silicon ◽  
Spectroscopy Study ◽  
Solid Phase Crystallization ◽  
Hydrogenated Amorphous

Defect States in Hydrogenated Amorphous Silicon-Sulphur Alloys by ESR and PAS

1991 ◽  
Vol 219 ◽  
Author(s):  
Gaorong Han ◽  
Jianmin Qiao ◽  
Piyi Du ◽  
Zhonghua Jiang ◽  
Zishang Ding
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Spin Density ◽  
Molecular Hydrogen ◽  
Annealing Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Sulphur Content ◽  
Defect States ◽  
Hydrogenated Amorphous

ABSTRACTWe have presented ESR and PAS measurements for a series of a-SiS:H and a-Si: H films deposited by glow discharge at different parameters. The spin density in a-SiS:H alloys measured by ESR is essentially independent of the sulphur content, while the density of defects measured by PAS increases significantly with the increasing of sulphur content. The ESR signals in a-SiS:H alloys strongly depend on both annealing and illumination. The spin density increases up to 540°C and then decreases with raising annealing temperature for a-SiS:H and a-Si:H alloys. The results suggest that some new defects such as molecular hydrogen and microvoids are appeared when addition of sulphur to a-Si:H films.

Study of the effect of boron doping on the solid phase crystallisation of hydrogenated amorphous silicon films

2014 ◽  
Vol 568 ◽  
pp. 38-43 ◽  
Author(s):  
J.M. Westra ◽  
R.A.C.M.M. van Swaaij ◽  
P. Šutta ◽  
K. Sharma ◽  
M. Creatore ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Solid Phase ◽  
Hydrogenated Amorphous Silicon ◽  
Boron Doping ◽  
Silicon Films ◽  
Hydrogenated Amorphous
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