Non-destructive depth profile analysis using synchrotron radiation excited XPS

2006 ◽  
Vol 156 (1-2) ◽  
pp. 99-101 ◽  
Author(s):  
Michael Zier ◽  
Steffen Oswald ◽  
Rainer Reiche ◽  
Klaus Wetzig
Keyword(s):  
Synchrotron Radiation ◽  
Depth Profile ◽  
Profile Analysis ◽  
Depth Profile Analysis ◽  
Non Destructive

scholarly journals In-depth Profile Analysis in Metal/high-k Gate Stack Structures Studied by Synchrotron-radiation Photoelectron Spectroscopy

Hyomen Kagaku ◽  
2010 ◽  
Vol 31 (9) ◽  
pp. 441-447
Author(s):  
Satoshi TOYODA ◽  
Hiroyuki KAMADA ◽  
Hiroshi KUMIGASHIRA ◽  
Masaharu OSHIMA ◽  
Kunihiko IWAMOTO ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Depth Profile ◽  
Photoelectron Spectroscopy ◽  
Profile Analysis ◽  
Depth Profile Analysis ◽  
Gate Stack ◽  
High K

Sputter depth profile analysis of marker layers

1990 ◽  
Vol 15 (8) ◽  
pp. 463-465 ◽  
Author(s):  
J. A. Peinador ◽  
I. Abril ◽  
J. J. Jiménez-Rodríguez ◽  
A. Gras-Marti
Keyword(s):  
Depth Profile ◽  
Profile Analysis ◽  
Depth Profile Analysis

Depth profile analysis of solar cell silicon by GD-MS

2014 ◽  
Vol 29 (11) ◽  
pp. 2072-2077 ◽  
Author(s):  
M. Di Sabatino ◽  
C. Modanese ◽  
L. Arnberg
Keyword(s):  
Solar Cell ◽  
Depth Profile ◽  
Profile Analysis ◽  
Depth Resolution ◽  
Impurity Distribution ◽  
Concentration Profiles ◽  
Good Sensitivity ◽  
Transition Elements ◽  
Depth Profile Analysis

Comparison of SIMS (top) and GD-MS (bottom) analyses on sample R6-2b (implanted B). dc HR-GD-MS can be used for depth profile analysis of impurities in PV Si with good sensitivity and a depth resolution of 0.5 μm. Concentration profiles of samples contaminated with B, P and Ti agreed well with implanted levels. For fast diffusing transition elements, e.g. Fe and Cu, different impurity distribution mechanisms occur. This should be taken into account when analysing these impurities.

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