The process of Electron Beam-Physical Vapor Deposition (EB-PVD) preparing SiC coating with liquid evaporation was firstly discussed from a thermodynamic viewpoint. The results showed that the ratio of SiC in the as-deposited coating gradually increases and tends to reach a stable maximum of 0.73 with the evaporation temperature increase from 2500 K to 3400 K. To verify the thermodynamic analysis, amorphous SiC coating was deposited on Si substrate by EB-PVD at 3100 K. SiC concentration across the cross section of coating was calculated from the area of elements spectrum in X-ray photoelectron spectroscopy (XPS) depth profile analysis. The results showed that the average SiC concentration was about 0.7.
Non-destructive depth profile analysis for surface and buried interface of Ge thin film on Si substrate by high-energy synchrotron radiation x-ray photoelectron spectroscopy
