Specifics of Current-Voltage Characteristics of CoxMn3 − x O4 (1 ≤ x ≤ 2) Solid Solutions near the Jahn-Teller Phase Transitions

2005 ◽  
Vol 404 (1-3) ◽  
pp. 176-178
Author(s):  
V. B. Fetisov ◽  
A. N. Ermakov ◽  
G. A. Kozhina ◽  
E. A. Pastukhov ◽  
V. M. Kamyshov ◽  
...  
Keyword(s):  
Phase Transitions ◽  
Solid Solutions ◽  
Current Voltage ◽  
Jahn Teller ◽  
Current Voltage Characteristics

Research of Changes of Value of Potential Barrier at the Metal/Polymer Interface during Phase Transitions in Metal

2016 ◽  
Vol 845 ◽  
pp. 61-64
Author(s):  
Pavel Chernov ◽  
Aleksandr Ponomarev ◽  
Aleksei N. Lachinov
Keyword(s):  
Phase Transition ◽  
Phase Transitions ◽  
Potential Barrier ◽  
Direct Contact ◽  
First Order ◽  
First Order Phase Transition ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
First Order Phase ◽  
Metal Polymer

The article is devoted to the study of influence of the first-order phase transition in a metal (In) on changes in the metal/polymer potential barrier. The metal that undergoes the phase transition is not in direct contact with the polymer film. Analysis of the current-voltage characteristics allows to calculate the changes in the magnitude of the metal/polymer potential barrier at the phase transitions in In.

scholarly journals Исследование вольт-амперных характеристик светодиодных гетероструктур на основе InAsSb в диапазоне температур 4.2-300 K

2021 ◽  
Vol 55 (6) ◽  
pp. 502
Author(s):  
А.А. Семакова ◽  
Н.Л. Баженов ◽  
К.Д. Мынбаев ◽  
А.В. Черняев ◽  
С.С. Кижаев ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Wells ◽  
Solid Solutions ◽  
Carrier Transport ◽  
Charge Carriers ◽  
Leakage Currents ◽  
Temperature Range ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Additional Channel

The results of a study of the current-voltage characteristics of LED heterostructures with an active region based on InAsSb solid solutions and InAsSb/InAs and InAsSb/InAsSbP quantum wells (QWs) in the temperature range 4.2–300 K are presented. The mechanisms of the carrier transport depending on the temperature and design of the heterostructure was determined. It is shown that the charge transport through the heterostructures is governed by the diffusion and recombination mechanisms at temperatures close to 300 K; in the temperature range 4.2–77 K, the contribution of the tunnelling mechanism was observed. For heterostructure InAs/InAs/InAs0.15Sb0.31P0.54 the additional channel of the carrier transport was determined. It was shown that the presence of 108 QWs InAs0.88Sb0.12/InAs into the active region of the heterostructure led to an increase in the leakage currents through the heterojunction in the whole temperature range, which is probably related to the tunnelling of charge carriers.

scholarly journals Электрические свойства пленок металлоорганических перовскитов

2019 ◽  
Vol 61 (2) ◽  
pp. 243
Author(s):  
А.М. Ершова ◽  
М.К. Овезов ◽  
И.П. Щербаков ◽  
А.Н. Алешин
Keyword(s):  
Phase Transitions ◽  
Electrical Properties ◽  
Orthorhombic Phase ◽  
Activation Energies ◽  
Charge Carriers ◽  
Temperature Range ◽  
Current Voltage ◽  
Temperature Dependences ◽  
Characteristic Points ◽  
Current Voltage Characteristics

AbstractThe electrical properties of the films of organometallic perovskites CH_3NH_3PbBr_3 and CH_3NH_3PbI_3 were studied. Current–voltage characteristics for the CH_3NH_3PbBr_3 and CH_3NH_3PbI_3 samples were measured in a temperature range of 300–80 K, from which the temperature dependences of resistivity ρ( T ) having characteristic points of inflection in a range of 160–240 K were determined. The activation energies of charge carriers prior to and after points of inflection were determined. It is assumed that the observed features in the temperature dependences of resistivity (temperature at the points of inflection) correlate with the temperatures of tetragonal-to-orthorhombic phase transitions for two studied organometallic perovskites (CH_3NH_3PbBr_3 and CH_3NH_3PbI_3).

scholarly journals Influence of radiation on the electrophysical parameters of GaAsP LEDs

2021 ◽  
Vol 22 (1) ◽  
pp. 56-61
Author(s):  
R.M. Vernydub ◽  
◽  
O.I. Kyrylenko ◽  
O.V. Konoreva ◽  
P.G. Litovchenko ◽  
...  
Keyword(s):  
Solid Solutions ◽  
Electron Irradiation ◽  
Series Resistance ◽  
Differential Resistance ◽  
Isochronous Annealing ◽  
Barrier Potential ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Electrophysical Parameters

The features of the current-voltage characteristics of LEDs obtained on the basis of GaP-GaAsP solid solutions are considered. The results of studies of the effect of electron irradiation (E = 2 MeV, F = 3 · 1014 ÷ 2.6 · 1016 cm-2) on the main electrophysical parameters of GaAs1-xPx diodes (x = 0.85 – yellow, x = 0.45 – orange) are given. The increase of differential resistance, the series resistance of the base, and barrier potential are revealed. The processes of recovery of the investigated quantities during isochronous annealing are analyzed, the mechanisms of degradation-recovery phenomena are discussed.

scholarly journals Temperature dependences of the elektrophysical properties of the solid solution Si1-xSnx (0  x  0.04)

2021 ◽  
pp. 63-68
Keyword(s):  
Solid Solution ◽  
Space Charge ◽  
Solid Solutions ◽  
Active Material ◽  
Silicon Substrates ◽  
Temperature Range ◽  
Carrier Transfer ◽  
Current Voltage ◽  
Temperature Dependences ◽  
Current Voltage Characteristics

The current-voltage characteristics of p-Si–n-Si1-xSnx (0  x  0.04) structures have been studied in the temperature range from 293 to 453 K. It was determined that the initial sections of the direct branches of the I–V characteristic at all temperatures are described by the expo-nential dependence of the current on the voltage, and then a quadratic section follows, which is described by the drift mechanism of carrier transfer in the regime of ohmic relaxation of the space charge. We determined the activation energies of two deep levels with values of 0.21 eV and 0.35 eV, which are assigned to interstitial Sn atoms and A-centers, respectively. The prospect of using solid solutions Si1-xSnx (0  x  0.04), obtained on silicon substrates, as an active material in the manufacture of injection diodes is substantiated.

Creation of a pn heterojunction in Hg1−xCdxTe (x ≈ 0.2) by laser annealing

1995 ◽  
Vol 73 (3-4) ◽  
pp. 174-176
Author(s):  
E. Sheregii ◽  
M. Kuźma ◽  
C. Abeynayake ◽  
M. Pociask
Keyword(s):  
Energy Density ◽  
Laser Treatment ◽  
Solid Solutions ◽  
Nd:Yag Laser ◽  
Laser Annealing ◽  
Computer Modelling ◽  
Mass Transportation ◽  
X Ray ◽  
Current Voltage ◽  
Current Voltage Characteristics

A highly photosensitive diode area was created in solid solutions of Hg1−xCdxTe (x ≈ m 0.2) (MCT) without melting its surface. The idea of the possible formation of pn heterojunctions, which was indicated by computer modelling of the mass transportation processes under laser treatment of the MCT, was experimentally realized. MCT samples were irradiated with an Nd:YAG laser having an energy density of 0.7 J cm−2. The presence of a heterojunction on a surface not far below the upper surface has been verified by photovoltaic measurements and X-ray microanalysis as well as by current–voltage characteristics.

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