scholarly journals Temperature dependences of the elektrophysical properties of the solid solution Si1-xSnx (0  x  0.04)

2021 ◽  
pp. 63-68
Keyword(s):  
Solid Solution ◽  
Space Charge ◽  
Solid Solutions ◽  
Active Material ◽  
Silicon Substrates ◽  
Temperature Range ◽  
Carrier Transfer ◽  
Current Voltage ◽  
Temperature Dependences ◽  
Current Voltage Characteristics

The current-voltage characteristics of p-Si–n-Si1-xSnx (0  x  0.04) structures have been studied in the temperature range from 293 to 453 K. It was determined that the initial sections of the direct branches of the I–V characteristic at all temperatures are described by the expo-nential dependence of the current on the voltage, and then a quadratic section follows, which is described by the drift mechanism of carrier transfer in the regime of ohmic relaxation of the space charge. We determined the activation energies of two deep levels with values of 0.21 eV and 0.35 eV, which are assigned to interstitial Sn atoms and A-centers, respectively. The prospect of using solid solutions Si1-xSnx (0  x  0.04), obtained on silicon substrates, as an active material in the manufacture of injection diodes is substantiated.

scholarly journals Исследование вольт-амперных характеристик светодиодных гетероструктур на основе InAsSb в диапазоне температур 4.2-300 K

2021 ◽  
Vol 55 (6) ◽  
pp. 502
Author(s):  
А.А. Семакова ◽  
Н.Л. Баженов ◽  
К.Д. Мынбаев ◽  
А.В. Черняев ◽  
С.С. Кижаев ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Wells ◽  
Solid Solutions ◽  
Carrier Transport ◽  
Charge Carriers ◽  
Leakage Currents ◽  
Temperature Range ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Additional Channel

The results of a study of the current-voltage characteristics of LED heterostructures with an active region based on InAsSb solid solutions and InAsSb/InAs and InAsSb/InAsSbP quantum wells (QWs) in the temperature range 4.2–300 K are presented. The mechanisms of the carrier transport depending on the temperature and design of the heterostructure was determined. It is shown that the charge transport through the heterostructures is governed by the diffusion and recombination mechanisms at temperatures close to 300 K; in the temperature range 4.2–77 K, the contribution of the tunnelling mechanism was observed. For heterostructure InAs/InAs/InAs0.15Sb0.31P0.54 the additional channel of the carrier transport was determined. It was shown that the presence of 108 QWs InAs0.88Sb0.12/InAs into the active region of the heterostructure led to an increase in the leakage currents through the heterojunction in the whole temperature range, which is probably related to the tunnelling of charge carriers.

Effect of Injection Phenomena on Electrical Properties of pSi--nSi1--xSnx Heterojunctions

2021 ◽  
pp. 71-84
Author(s):  
Kh.M. Madaminov
Keyword(s):  
Solid Solution ◽  
Deep Level ◽  
Voltage Characteristic ◽  
Silicon Substrates ◽  
Current Voltage Characteristic ◽  
Depletion Effect ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Characteristic Segment

We studied the current-voltage characteristic of pSi--nSi1--xSnx structures in the temperature range of 293--393 K so as to find out the role of injection phenomena during electrical property formation in pSi--nSi1--xSnх heterojunctions derived from the Si1--xSnx (0 ≤ x ≤ 0.04) solid solution. We established that the current-voltage characteristic of such heterojunctions consists of two typical segments. We determined that an exponential function describes the first current-voltage characteristic segment well. In all current-voltage characteristics the exponential curve is followed by sublinear segments that do not depend on temperature. We show that the theory of injection depletion effect describes these segments well. We used the sublinear segment of the current-voltage characteristic to determine the value of the parameter a, which can be employed to calculate deep level impurity concentration leading to the appearance of the sublinear segment. We prove that the structure under investigation may be considered to be a pSi--nSi1--xSnx--n+Si1--xSnx (0 ≤ x ≤ 0.04) junction with a high-resistance nSi1--xSnx layer. The analysis results make it possible to conclude that charge carrier dissipation on both complex aggregates and nanoinclusions plays a significant role in forming electrophysical properties in the Si1--xSnx (0 ≤ x ≤ 0.04) solid solution and that epitaxial films of Si1--xSnx (0 ≤ x ≤ 0.04) solid solutions derived on silicon substrates are efficient promising materials for developing diodes operating under double injection

scholarly journals Электрические свойства пленок металлоорганических перовскитов

2019 ◽  
Vol 61 (2) ◽  
pp. 243
Author(s):  
А.М. Ершова ◽  
М.К. Овезов ◽  
И.П. Щербаков ◽  
А.Н. Алешин
Keyword(s):  
Phase Transitions ◽  
Electrical Properties ◽  
Orthorhombic Phase ◽  
Activation Energies ◽  
Charge Carriers ◽  
Temperature Range ◽  
Current Voltage ◽  
Temperature Dependences ◽  
Characteristic Points ◽  
Current Voltage Characteristics

AbstractThe electrical properties of the films of organometallic perovskites CH_3NH_3PbBr_3 and CH_3NH_3PbI_3 were studied. Current–voltage characteristics for the CH_3NH_3PbBr_3 and CH_3NH_3PbI_3 samples were measured in a temperature range of 300–80 K, from which the temperature dependences of resistivity ρ( T ) having characteristic points of inflection in a range of 160–240 K were determined. The activation energies of charge carriers prior to and after points of inflection were determined. It is assumed that the observed features in the temperature dependences of resistivity (temperature at the points of inflection) correlate with the temperatures of tetragonal-to-orthorhombic phase transitions for two studied organometallic perovskites (CH_3NH_3PbBr_3 and CH_3NH_3PbI_3).

RESEARCH OF THE DEPENDENCE OF CURRENT-VOLTAGE CHARACTERISTICS OF p-Si-n-(Si2)1 - x - y(Ge2)x(ZnSe)y-STRUCTURES ON TEMPERATURE

2019 ◽  
Vol 6 (3) ◽  
pp. 16-21
Author(s):  
Amin Safarbaevich Saidov ◽  
Kobil Asharovich Amonov ◽  
Ada Yul'evna Leyderman
Keyword(s):  
Solid Solution ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Room Temperature ◽  
Experimental Results ◽  
Complex Nature ◽  
Silicon Substrates ◽  
The Third ◽  
Current Voltage ◽  
Current Voltage Characteristics

The possibility of growing of the solid solution (Si2)1 - x - y (Ge2)x (ZnSe)y on silicon substrates by liquid-phase epitaxy from the tin solution - melt has been shown. The current - voltage characteristics of heterostructures at room temperature has three sections: ohmic section - I ~ V , exponential one - I ~ exp ( qV / ckT ), and the third one with cubic dependence - I ~ V3 that at increasingtemperature is replaced by the weaker dependences - I ~ V2,8, I ~ V2,5 and I ~ V2,3 at temperatures of 360, 390 and 420 K, respectively. The experimental results are explained on the basis of theoretical ideas about the complex nature of the recombination processesin these materials.

Recombination and Excess Currents in 4H-SiC Structure with Low-Doped n-Region

2013 ◽  
Vol 740-742 ◽  
pp. 565-568 ◽  
Author(s):  
Anatoly M. Strel'chuk ◽  
Evgenia V. Kalinina
Keyword(s):  
Space Charge ◽  
Space Charge Region ◽  
Deep Level ◽  
Reverse Current ◽  
Effective Lifetime ◽  
Current Voltage ◽  
Temperature Dependences ◽  
Barrier Type ◽  
Current Voltage Characteristics ◽  
Increasing Temperature

Presented in this paper are the results of a study of forward and reverse current-voltage characteristics of the 4H-SiC pn structures produced by implantation of Al+ ions in low-doped ((5-7)∙1014cm-3) n-type conductivity epitaxial layer. A forward current was identified which is consistent with the model of recombination in the space charge region of a pn junction via a deep level: J=Joexp(qU/nkT), where Jo=Jo*exp[-Ea/(kT)] (or J= Jo*exp[(qU-2Ea)/nkT)]) with the ideality factor n=2. Parameters of this current are as follows: Jo(293 K) ~ 8∙10-25 A/cm2, Ea 1.73-1.75 eV (2Ea3.46-3.5 eV), Jo*~7∙105 A/cm2. A comparison of the experimental and model-based values of Ea, with allowance for all clearly defined temperature dependences, both strong and weak, of the model of recombination in the space charge region shows that the effective lifetime increases and effective trapping cross section σeff of the recombination level decreases with increasing temperature: σeff ~ T-2÷σeff ~ T-2.5 or σeff ~exp(ΔE /kT) where ΔE=80-100 meV. Reverse current practically in whole temperature range is excess current, only at high temperatures (~800 K) reverse current became close to generation current in space charge region. Special interest are the excess currents as a result of the application of a reverse or forward voltage at high temperature. The barrier type excess currents is characteristic of SiC.

scholarly journals Nonlinear Response of a Superconductor of the Bi-Sr-Ca-Cu-O System to an Alternating Magnetic Field in the Superconducting Transition Temperature Range

2018 ◽  
Vol 185 ◽  
pp. 08005
Author(s):  
Alexander Sergeev ◽  
Igor Golev ◽  
Victoria Gvozdevskaya ◽  
Anastasia Barkalova
Keyword(s):  
Magnetic Field ◽  
Nonlinear Response ◽  
Alternating Magnetic Field ◽  
Resistive State ◽  
Superconducting Transition ◽  
Critical Temperatures ◽  
Temperature Range ◽  
Nonlinear Properties ◽  
Current Voltage ◽  
Current Voltage Characteristics

The nonlinear response of the superconductor of the Bi-Sr-Ca-Cu-O system in the temperature range of the superconducting transition under the action of a harmonic alternating magnetic field is experimentally studied. For multiphase superconductors having in their volume regions with distinct critical temperatures, the effect of odd harmonics in the response signal is observed. The contribution of crystallites and the system of weak bonds between the crystallites in the nonlinear response is singled out. It was found that the nonlinear properties of the investigated samples in the resistive state are determined mainly by the nonlinear current-voltage characteristics of the system of weak bonds between the crystallites.

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