scholarly journals Influence of radiation on the electrophysical parameters of GaAsP LEDs

2021 ◽  
Vol 22 (1) ◽  
pp. 56-61
Author(s):  
R.M. Vernydub ◽  
◽  
O.I. Kyrylenko ◽  
O.V. Konoreva ◽  
P.G. Litovchenko ◽  
...  
Keyword(s):  
Solid Solutions ◽  
Electron Irradiation ◽  
Series Resistance ◽  
Differential Resistance ◽  
Isochronous Annealing ◽  
Barrier Potential ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Electrophysical Parameters

The features of the current-voltage characteristics of LEDs obtained on the basis of GaP-GaAsP solid solutions are considered. The results of studies of the effect of electron irradiation (E = 2 MeV, F = 3 · 1014 ÷ 2.6 · 1016 cm-2) on the main electrophysical parameters of GaAs1-xPx diodes (x = 0.85 – yellow, x = 0.45 – orange) are given. The increase of differential resistance, the series resistance of the base, and barrier potential are revealed. The processes of recovery of the investigated quantities during isochronous annealing are analyzed, the mechanisms of degradation-recovery phenomena are discussed.

Effect of Proton and Electron Irradiation on Current-Voltage Characteristics of Rectifying Diodes Based on 4H-SiC Structures with Schottky Barrier

2020 ◽  
Vol 1004 ◽  
pp. 1081-1087
Author(s):  
Anatoly M. Strel'chuk ◽  
Vitalii V. Kozlovski ◽  
Alexander A. Lebedev
Keyword(s):  
Activation Energy ◽  
Electron Irradiation ◽  
Schottky Diodes ◽  
Reverse Current ◽  
Differential Resistance ◽  
Base Layer ◽  
Type Layer ◽  
Current Voltage ◽  
Level 3 ◽  
Current Voltage Characteristics

Forward and reverse current-voltage (I-V) characteristics of commercial rectifying Schottky diodes (SDs) based on silicon carbide (4H-SiC, base layer doping level 3·1015 cm-3) have been studied under irradiation with 0.9 MeV electrons and 15 MeV protons. The starting diodes were characterized by a barrier height of ~1.5 eV and nearly ideal forward and reverse I-V characteristics. It was found that, at doses exceeding the threshold dose Dth, the series differential resistance Rs of the diodes grows as Rs ~ Dm (m = 10-15) and shows no tendency toward saturation. Dth ≈7·1015 cm-2 under electron irradiation, and Dth ≈ 4·1013 cm-2 in the case of irradiation with protons. Heating to 200oC results in that Rs decreases with activation energy of ~1.1 eV and Rs is partly annealed-out with activation energy of ~0.7 eV. The starting Schottky diodes changes only slightly under irradiation, but, possibly, the irradiation leads to an over-compensation of the n-type layer and formation of an additional barrier in the form of a pn junction.

Electrical conductivity and current-voltage characteristics of alumina with or without neutron and electron irradiation

1998 ◽  
Vol 258-263 ◽  
pp. 1848-1855 ◽  
Author(s):  
K Shiiyama ◽  
M.M.R Howlader ◽  
S.J Zinkle ◽  
T Shikama ◽  
M Kutsuwada ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Electron Irradiation ◽  
Current Voltage ◽  
Current Voltage Characteristics

Effect of series resistance on the forward current-voltage characteristics of Schottky diodes in the presence of interfacial layer

1996 ◽  
Vol 39 (1) ◽  
pp. 83-87 ◽  
Author(s):  
Enise Ayyildiz ◽  
Abdulmecit Türüt ◽  
Hasan Efeoğlu ◽  
Sebahattin Tüzemen ◽  
Mustafa Sağlam ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

Anomalous Scatter of Forward Current-Voltage Characteristics of He+-Irradiated Ni/4H-SiC Schottky Diodes

2016 ◽  
Vol 858 ◽  
pp. 749-752 ◽  
Author(s):  
Anatoly M. Strel'chuk ◽  
Viktor V. Zelenin ◽  
Alexei N. Kuznetsov ◽  
Joseph Tringe ◽  
Albert V. Davydov ◽  
...  
Keyword(s):  
Series Resistance ◽  
Degradation Mechanism ◽  
Schottky Diodes ◽  
Defect Structures ◽  
Induced Current ◽  
Forward Current ◽  
Current Voltage ◽  
Before And After ◽  
Current Voltage Characteristics

A study of forward current-voltage characteristics of Ni/4H-SiC Schottky diodes (SDs) before and after irradiation with He+ ions revealed features that characterize defect structures and reveal the degradation mechanism of the diodes. These features are the presence of excess currents of certain type in the unirradiated SDs, their appearance in forward-biased originally ideal SDs, and a >10 orders of magnitude scatter of the series resistance of the SDs upon their irradiation with He+ ions. A model of localized defect-induced current paths (shunts) in the form of unintentionally produced SDs with the substrate is suggested.

scholarly journals SOFTWARE FOR MEASURING OF DIFFERENTIAL RESISTANCE BY SCANNING OF DIGITAL IMAGES OF ANALOG OSCILLOGRAMS

2021 ◽  
Vol 2 (133) ◽  
pp. 12-19
Author(s):  
Alexander Ivon ◽  
Valery Istushkin
Keyword(s):  
Digital Images ◽  
Differential Resistance ◽  
Electric Currents ◽  
Software Environment ◽  
Linear Resistance ◽  
Current Voltage ◽  
Current Voltage Characteristics

A program for measuring the differential resistance of varistor materials by scanning digital images of analog oscillograms is described. The program was created using the languages HTML, CSS, JavaScript and Canvas technology. The software environment for its execution are Internet browsers. The program can be used to measure linear resistance, which limits the nonlinearity of current-voltage characteristics of varistor materials at high electric currents.

scholarly journals Особенности транспорта носителей заряда в структурах n-=SUP=-+-=/SUP=--n-=SUP=-0-=/SUP=--n-=SUP=-+-=/SUP=- с гетеропереходом GaAs/AlGaAs при сверхвысоких плотностях тока

2019 ◽  
Vol 53 (6) ◽  
pp. 816
Author(s):  
С.О. Слипченко ◽  
А.А. Подоскин ◽  
О.С. Соболева ◽  
В.С. Юферев ◽  
В.С. Головин ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Voltage Characteristic ◽  
Balance Model ◽  
Operating Voltage ◽  
Current Voltage Characteristic ◽  
A Value ◽  
Current Voltage ◽  
Algaas Layer ◽  
Current Voltage Characteristics

AbstractThe current–voltage characteristics of n ^+-GaAs/ n ^0-GaAs/ N ^0-AlGaAs/ N ^+-AlGaAs/ n ^+-GaAs isotype heterostructures and n ^+-GaAs/ n ^0-GaAs/ n ^+-GaAs homostructures are studied. It is shown that, for a heterostructure under reverse bias providing the injection of electrons from n ^0-GaAs into N ^0-AlGaAs, the maximum operating voltage reaches a value of 48 V at a thickness of the N ^0-AlGaAs layer of 1 . 0 μm, and the current–voltage characteristic has no region of negative differential resistance. The operation of a homostructure is accompanied by a transition to the negative-differential-resistance region at a voltage of 10 V. Theoretical analysis in terms of the energy-balance model demonstrated that the reverse-biased isotype heterostructure has no negative-differential-resistance region because, in this case, the field domain does not collapse in contrast to what occurs in homostructures.

Ferroelectric Property and Microstructures of La-Doped Bi4Ti3O12 Thin Films

2013 ◽  
Vol 537 ◽  
pp. 114-117
Author(s):  
X.A. Mei ◽  
Rui Fang Liu ◽  
C.Q. Huang ◽  
J. Liu
Keyword(s):  
Thin Films ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Si Substrates ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
La Doped

La-doped bismuth titanate (Bi4-xLaxTi3O12: BLT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. For the samples with x=0.25 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75 the current-voltage characteristics showed simple ohmic behaviors and their P-V hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BLT ceramic with x=0.75 were above 20μC/cm2 and 85KV/cm , respectively.

Mechanisms of negative differential resistance in glutamine-functionalized WS2 quantum dots

2021 ◽  
Author(s):  
Denice Feria ◽  
Sonia Sharma ◽  
Yu-Ting Chen ◽  
Zhi-Ying Weng ◽  
Kuo-Pin Chiu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Negative Differential Resistance ◽  
Electronic Devices ◽  
Transition Metal Dichalcogenides ◽  
Differential Resistance ◽  
Voltage Range ◽  
Current Voltage ◽  
Metal Dichalcogenides ◽  
Current Voltage Characteristics ◽  
Memory Applications

Abstract Understanding the mechanism of the negative differential resistance (NDR) in transition metal dichalcogenides is essential for fundamental science and the development of electronic devices. Here, the NDR of the current-voltage characteristics was observed based on the glutamine-functionalized WS2 quantum dots (QDs). The NDR effect can be adjusted by varying the applied voltage range, air pressure, surrounding gases, and relative humidity. A peak-to-valley current ratio as high as 6.3 has been achieved at room temperature. Carrier trapping induced by water molecules was suggested to be responsible for the mechanism of the NDR in the glutamine-functionalized WS2 QDs. Investigating the NDR of WS2 QDs may promote the development of memory applications and emerging devices.

Negative Differential Resistance of Graphene Oxide/Sulphur Compound

2021 ◽  
Vol 67 ◽  
pp. 25-31
Author(s):  
Sophia R. Figarova ◽  
Elvin M. Aliyev ◽  
Rashad G. Abaszade ◽  
R.I. Alekberov ◽  
Vagif R. Figarov
Keyword(s):  
Graphene Oxide ◽  
Functional Groups ◽  
Negative Differential Resistance ◽  
Characteristic Curve ◽  
Differential Resistance ◽  
Localized States ◽  
Sulphur Compound ◽  
X Ray Diffraction ◽  
Current Voltage ◽  
Current Voltage Characteristics

Graphene oxide/sulphur compound was synthesized by Hammers method. The chemical composition, presence/quantity of functional groups, exfoliation level, number of layers, crystallite size of graphene oxide/sulphur were characterized by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy images. The current-voltage characteristics of the samples were measured in air at room temperature. In the I - V characteristic curve of graphene oxide/sulphur compound with the ratio of oxygen to carbon of 3.54 and that to sulphur of 42.54, negative differential resistance was observed. The negative differential resistance is attributed to current carrier transitions between the localized states formed by functional groups.

Sign in / Sign up

Export Citation Format

Share Document