scholarly journals Электрические свойства пленок металлоорганических перовскитов

2019 ◽  
Vol 61 (2) ◽  
pp. 243
Author(s):  
А.М. Ершова ◽  
М.К. Овезов ◽  
И.П. Щербаков ◽  
А.Н. Алешин
Keyword(s):  
Phase Transitions ◽  
Electrical Properties ◽  
Orthorhombic Phase ◽  
Activation Energies ◽  
Charge Carriers ◽  
Temperature Range ◽  
Current Voltage ◽  
Temperature Dependences ◽  
Characteristic Points ◽  
Current Voltage Characteristics

AbstractThe electrical properties of the films of organometallic perovskites CH_3NH_3PbBr_3 and CH_3NH_3PbI_3 were studied. Current–voltage characteristics for the CH_3NH_3PbBr_3 and CH_3NH_3PbI_3 samples were measured in a temperature range of 300–80 K, from which the temperature dependences of resistivity ρ( T ) having characteristic points of inflection in a range of 160–240 K were determined. The activation energies of charge carriers prior to and after points of inflection were determined. It is assumed that the observed features in the temperature dependences of resistivity (temperature at the points of inflection) correlate with the temperatures of tetragonal-to-orthorhombic phase transitions for two studied organometallic perovskites (CH_3NH_3PbBr_3 and CH_3NH_3PbI_3).

scholarly journals Влияние электронного и дырочного допирования на транспортные характеристики халькогенидных систем

2021 ◽  
Vol 63 (5) ◽  
pp. 606
Author(s):  
О.Б. Романова ◽  
C.C. Аплеснин ◽  
Л.В. Удод
Keyword(s):  
Magnetic Field ◽  
Electrical Properties ◽  
Hall Effect ◽  
Charge Carriers ◽  
Hall Constant ◽  
Temperature Range ◽  
Current Voltage ◽  
Semiconductor Compounds ◽  
Current Voltage Characteristics ◽  
Ohmic Conductivity

The electrical properties and the Hall effect in semiconductor compounds Ag0.01Mn0.99S and Tm0.01Mn0.99S have been studied in the temperature range 80–400 K in a magnetic field of 12 kOe. The mechanism of conduction is established, which depends on the type of doping and concentration from the current - voltage characteristics. At the replacement of manganese by silver, the Mott type was found, and the replacement by thulium causes ohmic conductivity. The mobility and type of charge carriers are found from the Hall constant.

scholarly journals Investigation of temperature dependences of current-voltage characteristics of hybrid organic materials based on zinc complexes

2021 ◽  
pp. 81-87
Author(s):  
Andrey Tyutyunik ◽  
Vladimir Gurchenko ◽  
Alim Mazinov
Keyword(s):  
Coordination Compound ◽  
Electrochemical Analysis ◽  
Zinc Complexes ◽  
Charge Carriers ◽  
Current Voltage ◽  
Mobility Of Charge Carriers ◽  
Temperature Dependences ◽  
Homo And Lumo ◽  
Current Voltage Characteristics ◽  
Fundamental Values

In this work, we analyzed the current-voltage characteristics in the temperature range of the hybrid organic material C24H24N6O3Zn in order to determine the prospects for using this compound as a semiconductor material. The range of temperature measurements was from 270 to 330 K. An electrochemical analysis of the studied coordination compound was carried out, the energies of the HOMO and LUMO levels were calculated. The method of obtaining, microscopy, and also the method of measuring the temperature dependences of the electrical properties of the obtained thin films of these hybrid materials based on zinc complexes are described. A number of fundamental values of the films of this coordination compound have been calculated: the activation energy is  0.88 eV and the mobility of charge carriers is  1.4710-11 cm V-1 s-1.

scholarly journals Исследование вольт-амперных характеристик светодиодных гетероструктур на основе InAsSb в диапазоне температур 4.2-300 K

2021 ◽  
Vol 55 (6) ◽  
pp. 502
Author(s):  
А.А. Семакова ◽  
Н.Л. Баженов ◽  
К.Д. Мынбаев ◽  
А.В. Черняев ◽  
С.С. Кижаев ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Wells ◽  
Solid Solutions ◽  
Carrier Transport ◽  
Charge Carriers ◽  
Leakage Currents ◽  
Temperature Range ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Additional Channel

The results of a study of the current-voltage characteristics of LED heterostructures with an active region based on InAsSb solid solutions and InAsSb/InAs and InAsSb/InAsSbP quantum wells (QWs) in the temperature range 4.2–300 K are presented. The mechanisms of the carrier transport depending on the temperature and design of the heterostructure was determined. It is shown that the charge transport through the heterostructures is governed by the diffusion and recombination mechanisms at temperatures close to 300 K; in the temperature range 4.2–77 K, the contribution of the tunnelling mechanism was observed. For heterostructure InAs/InAs/InAs0.15Sb0.31P0.54 the additional channel of the carrier transport was determined. It was shown that the presence of 108 QWs InAs0.88Sb0.12/InAs into the active region of the heterostructure led to an increase in the leakage currents through the heterojunction in the whole temperature range, which is probably related to the tunnelling of charge carriers.

Influence of Ultrasonic Waves on Current-Voltage Characteristics and Polarization Effects of Si-N-P Radiation Receivers

2022 ◽  
Vol 1049 ◽  
pp. 317-324
Author(s):  
Abdumalik G. Gaibov ◽  
K.I. Vakhobov ◽  
B.V. Ibragimova ◽  
U.E. Zhuraev ◽  
D.T. Rasulova
Keyword(s):  
Signal Amplitude ◽  
Ultrasonic Waves ◽  
Charge Carriers ◽  
Temperature Fields ◽  
Physical Processes ◽  
Polarization Effects ◽  
Impurity Atoms ◽  
Current Voltage ◽  
Temperature Dependences ◽  
Current Voltage Characteristics

The currents of n-p junctions and polarization effects caused by the capture processes of diffusion Si-receivers (detectors) of radiation exposed by ultrasound have been analyzed in this work. It was found that there are local concentrations of impurity atoms with an effective size l>6μm30μm in Si-n-p radiation receivers. They determine the behavior of the signal amplitude in different intervals of electric and temperature fields. It was found that at Е>1500V/cm and T>168K, the efficiency of collecting nonequilibrium charge carriers significantly increases and doublets of spectral α-lines and “humps” disappear at the temperature dependences of the signal amplitude. The main physical processes and mechanisms that determine the appearance of the phenomenon of "polarization" of Si-n-p-detectors were investigated. This phenomenon is caused by the existence of local gold atoms, which arise in the process of manufacturing technology of Si-n-p-receivers and act as effective trapping centers.

Atomic Force Microscopy of the Local Electrical Properties of Bilayer Polyaniline-Polystyrene/P(VDF-TrFE) Composite

2021 ◽  
Vol 899 ◽  
pp. 506-511
Author(s):  
Artem V. Budaev ◽  
Ivanna N. Melnikovich ◽  
Vasily E. Melnichenko ◽  
Nikita A. Emelianov
Keyword(s):  
Atomic Force Microscopy ◽  
Electrical Properties ◽  
Polymer Nanocomposite ◽  
Charge Carriers ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Piezoelectric Force Microscopy ◽  
Microscopy Techniques

Atomic force microscopy techniques (conductive-AFM, I-V spectroscopy and PFM) were used for characterisation of the local electrical properties of bilayer polyaniline-polystyrene/P(VDF-TrFE) polymer nanocomposite. Observed hysteresis of current-voltage characteristics confirms its memristive properties. It was caused by the influence of the ferroelectric polarization of P(VDF-TrFE) layer, the domain structure of which was visualised by piezoelectric force microscopy on the transport of charge carriers at the interface.

scholarly journals EFFECT OF CARBON NANOTUBES ON THE ELECTRICAL PROPERTIES OF THE POLYMERIC COMPOSITES

2019 ◽  
Vol 3 ◽  
pp. 45
Author(s):  
Sergey Gango ◽  
Konstantin Gusev ◽  
Evgeniy Ilin ◽  
Mikhail Predtechensky ◽  
Vladimir Solovyev ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Electrical Conductivity ◽  
Experimental Study ◽  
Electrical Properties ◽  
Polymeric Composite ◽  
Frequency Range ◽  
Ac Electrical Conductivity ◽  
Current Voltage ◽  
Temperature Dependences ◽  
Current Voltage Characteristics

Experimental study of single-wall carbon nabotubes (CNT) effect on the electrical properties of polymeric composite materials based on epoxy matrix has been carried out. Direct-current (DC) as well as alternating-current (AC) electrical conductivity of nanocomposites with different CNT concentrations have been investigated in the temperature interval from 293 K to 373 K. Measurements of Seebeck coefficient confirm n-type conductivity of composite with CNTs. Percolation threshold of the composite material under study has been estimated. It has been found that addition of single-wall CNT at low concentration causes hysteresis of current-voltage characteristics and the temperature dependences of electrical conductivity as well as its anisotropy in the samples under study. No noticeable frequency dependence of the AC electrical conductivity has been found in the frequency range from 100 Hz to 300 kHz.

scholarly journals Temperature dependences of the elektrophysical properties of the solid solution Si1-xSnx (0  x  0.04)

2021 ◽  
pp. 63-68
Keyword(s):  
Solid Solution ◽  
Space Charge ◽  
Solid Solutions ◽  
Active Material ◽  
Silicon Substrates ◽  
Temperature Range ◽  
Carrier Transfer ◽  
Current Voltage ◽  
Temperature Dependences ◽  
Current Voltage Characteristics

The current-voltage characteristics of p-Si–n-Si1-xSnx (0  x  0.04) structures have been studied in the temperature range from 293 to 453 K. It was determined that the initial sections of the direct branches of the I–V characteristic at all temperatures are described by the expo-nential dependence of the current on the voltage, and then a quadratic section follows, which is described by the drift mechanism of carrier transfer in the regime of ohmic relaxation of the space charge. We determined the activation energies of two deep levels with values of 0.21 eV and 0.35 eV, which are assigned to interstitial Sn atoms and A-centers, respectively. The prospect of using solid solutions Si1-xSnx (0  x  0.04), obtained on silicon substrates, as an active material in the manufacture of injection diodes is substantiated.

scholarly journals Electrical Properties of Sis Heterostructures n-SnS2/CdTeO3/p-CdZnTe

2019 ◽  
Vol 64 (2) ◽  
pp. 164 ◽  
Author(s):  
I. G. Orletskyi ◽  
M. I. Ilashchuk ◽  
E. V. Maistruk ◽  
M. M. Solovan ◽  
P. D. Maryanchuk ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Charge Accumulation ◽  
Energy Diagram ◽  
Current Voltage ◽  
Temperature Dependences ◽  
Current Voltage Characteristics ◽  
Physical Phenomena ◽  
And Inversion

Conditions for the production of rectifying semiconductor-insulator-semiconductor (SIS) heterostructures n-SnS2/CdTeO3/p-Cd1−xZnxTe with the use of the spray-pyrolysis of SnS2 thin films on p-Cd1−xZnxTe crystalline substrates with the formation of an intermediate tunnel-thin CdTeO3 oxide layer have been studied. By analyzing the temperature dependences of the current-voltage characteristics, the dynamics of the heterostructure energy parameters is determined, and the role of energy states at the CdTeO3/p-Cd1−xZnxTe interface in the formation of forward and reverse currents is elucidated. By analyzing the capacity-voltage characteristics, the processes of charge accumulation and inversion in SIS structures is considered. An energy diagram of the examined heterostructure, which well describes experimental electro-physical phenomena, is proposed.

Azido bridged binuclear copper(ii) Schiff base compound: synthesis, structure and electrical properties

2019 ◽  
Vol 43 (41) ◽  
pp. 16255-16263
Author(s):  
Mrinmoy Ghosh ◽  
Sandip Saha ◽  
Abhijit Banerjee ◽  
Dieter Schollmeyer ◽  
Ananda Sarkar ◽  
...  
Keyword(s):  
Schiff Base ◽  
Electrical Properties ◽  
Binuclear Copper ◽  
Current Voltage ◽  
Compound Synthesis ◽  
Current Voltage Characteristics ◽  
Schiff Base Compound ◽  
Base Compound

The structure, FESEM, Al/complex/ITO microstructure and the current–voltage characteristics of the copper(ii) azido bridged dimer.

scholarly journals Nonlinear Response of a Superconductor of the Bi-Sr-Ca-Cu-O System to an Alternating Magnetic Field in the Superconducting Transition Temperature Range

2018 ◽  
Vol 185 ◽  
pp. 08005
Author(s):  
Alexander Sergeev ◽  
Igor Golev ◽  
Victoria Gvozdevskaya ◽  
Anastasia Barkalova
Keyword(s):  
Magnetic Field ◽  
Nonlinear Response ◽  
Alternating Magnetic Field ◽  
Resistive State ◽  
Superconducting Transition ◽  
Critical Temperatures ◽  
Temperature Range ◽  
Nonlinear Properties ◽  
Current Voltage ◽  
Current Voltage Characteristics

The nonlinear response of the superconductor of the Bi-Sr-Ca-Cu-O system in the temperature range of the superconducting transition under the action of a harmonic alternating magnetic field is experimentally studied. For multiphase superconductors having in their volume regions with distinct critical temperatures, the effect of odd harmonics in the response signal is observed. The contribution of crystallites and the system of weak bonds between the crystallites in the nonlinear response is singled out. It was found that the nonlinear properties of the investigated samples in the resistive state are determined mainly by the nonlinear current-voltage characteristics of the system of weak bonds between the crystallites.

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